Detalles del producto

Configuration 1:1 SPST Number of channels 1 Power supply voltage - single (V) 2.5, 3.3, 5 Power supply voltage - dual (V) +/-10, +/-5 Protocols Analog Ron (typ) (Ω) 12 CON (typ) (pF) 14.5 ON-state leakage current (max) (µA) 0.01 Supply current (typ) (µA) 250 Bandwidth (MHz) 464 Operating temperature range (°C) -40 to 85 Input/output continuous current (max) (mA) 20 Rating Catalog Drain supply voltage (max) (V) 5.5 Supply voltage (max) (V) 11 Negative rail supply voltage (max) (V) -1.65
Configuration 1:1 SPST Number of channels 1 Power supply voltage - single (V) 2.5, 3.3, 5 Power supply voltage - dual (V) +/-10, +/-5 Protocols Analog Ron (typ) (Ω) 12 CON (typ) (pF) 14.5 ON-state leakage current (max) (µA) 0.01 Supply current (typ) (µA) 250 Bandwidth (MHz) 464 Operating temperature range (°C) -40 to 85 Input/output continuous current (max) (mA) 20 Rating Catalog Drain supply voltage (max) (V) 5.5 Supply voltage (max) (V) 11 Negative rail supply voltage (max) (V) -1.65
SOIC (D) 8 29.4 mm² 4.9 x 6 SOT-23 (DBV) 5 8.12 mm² 2.9 x 2.8
  • ±1-V to ±6-V Dual-Supply Operation
  • Specified ON-State Resistance:
    • 25 Max With ±5-V Supply
    • 35 Max With ±3.3-V Supply
    • 47 Max With ±1.8-V Supply
  • Specified Low OFF-Leakage Currents:
    • 5 nA at 25°C
    • 10 nA at 85°C
  • Specified Low ON-Leakage Currents:
    • 5 nA at 25°C
    • 10 nA at 85°C
  • Low Charge Injection: 13 pC (±5-V Supply)
  • Fast Switching Speed:
    tON = 85 ns, tOFF = 50 ns (±5-V Supply)
  • Break-Before-Make Operation (tON > tOFF)
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2500-V Human-Body Model (A114-F)
    • 1000-V Charged-Device Model (C101-C)
    • 250-V Machine Model (A115-A)

  • ±1-V to ±6-V Dual-Supply Operation
  • Specified ON-State Resistance:
    • 25 Max With ±5-V Supply
    • 35 Max With ±3.3-V Supply
    • 47 Max With ±1.8-V Supply
  • Specified Low OFF-Leakage Currents:
    • 5 nA at 25°C
    • 10 nA at 85°C
  • Specified Low ON-Leakage Currents:
    • 5 nA at 25°C
    • 10 nA at 85°C
  • Low Charge Injection: 13 pC (±5-V Supply)
  • Fast Switching Speed:
    tON = 85 ns, tOFF = 50 ns (±5-V Supply)
  • Break-Before-Make Operation (tON > tOFF)
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2500-V Human-Body Model (A114-F)
    • 1000-V Charged-Device Model (C101-C)
    • 250-V Machine Model (A115-A)

The TS12A4516/TS12A4517 are single pole/single throw (SPST), low-voltage, dual-supply CMOS analog switches, with very low switch ON-state resistance. The TS12A4516 is normally open (NO). The TS12A4517 is normally closed (NC).

These CMOS switches can operate continuously with a dual supplies between ±1 V and ±6 V [(2 V < (V+ – V) < 12 V]. Each switch can handle rail-to-rail analog signals. The OFF-leakage current maximum is only 5 nA at 25°C or 10 nA at 85°C.

For pin-compatible parts for use with single supply, see the TS12A4514/TS12A4515.

The TS12A4516/TS12A4517 are single pole/single throw (SPST), low-voltage, dual-supply CMOS analog switches, with very low switch ON-state resistance. The TS12A4516 is normally open (NO). The TS12A4517 is normally closed (NC).

These CMOS switches can operate continuously with a dual supplies between ±1 V and ±6 V [(2 V < (V+ – V) < 12 V]. Each switch can handle rail-to-rail analog signals. The OFF-leakage current maximum is only 5 nA at 25°C or 10 nA at 85°C.

For pin-compatible parts for use with single supply, see the TS12A4514/TS12A4515.

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Documentación técnica

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Tipo Título Fecha
* Data sheet Dual-Supply Low ON-State Resistance SPST CMOS Analog Switches datasheet (Rev. B) 14 abr 2009
Application note Selecting the Correct Texas Instruments Signal Switch (Rev. E) PDF | HTML 02 jun 2022
Application note Multiplexers and Signal Switches Glossary (Rev. B) PDF | HTML 01 dic 2021
Application note Preventing Excess Power Consumption on Analog Switches 03 jul 2008
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 08 jul 2004

Diseño y desarrollo

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  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

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