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TXS4555

アクティブ

SIM カード電源、レベル・シフタ付き

製品詳細

Technology family TXS Applications SIM Card Rating Catalog Operating temperature range (°C) -40 to 85
Technology family TXS Applications SIM Card Rating Catalog Operating temperature range (°C) -40 to 85
UQFN (RUT) 12 3.4 mm² 2 x 1.7 VQFN (RGT) 16 9 mm² 3 x 3
  • Level Translator
    • VCC Range of 1.65 V to 3.3 V
    • VBATT Range from 2.3 to 5.5V
  • Low-Dropout (LDO) Regulator
    • 50-mA LDO Regulator With Enable
    • 1.8-V or 2.95-V Selectable Output Voltage
    • 2.3-V to 5.5-V Input Voltage Range
    • Very Low Dropout: 100mV (Max) at 50mA
  • Incorporates Shutdown Feature for the SIM Card Signals According to ISO-7816-3
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-B)
    • 500-V Charged-Device Model (C101)
    • 8kV HBM for SIM Pins
  • Package
    • 16-Pin QFN (3 mm x 3 mm)
    • 12-Pin QFN (2mm x 1.7mm)

  • Level Translator
    • VCC Range of 1.65 V to 3.3 V
    • VBATT Range from 2.3 to 5.5V
  • Low-Dropout (LDO) Regulator
    • 50-mA LDO Regulator With Enable
    • 1.8-V or 2.95-V Selectable Output Voltage
    • 2.3-V to 5.5-V Input Voltage Range
    • Very Low Dropout: 100mV (Max) at 50mA
  • Incorporates Shutdown Feature for the SIM Card Signals According to ISO-7816-3
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-B)
    • 500-V Charged-Device Model (C101)
    • 8kV HBM for SIM Pins
  • Package
    • 16-Pin QFN (3 mm x 3 mm)
    • 12-Pin QFN (2mm x 1.7mm)

The TXS4555 is a complete Smart Identity Module (SIM) card solution for interfacing wireless baseband processors with a SIM card to store I/O for mobile handset applications. The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards. It includes a high-speed level translator capable of supporting Class-B (2.95 V) and Class-C (1.8 V) interfaces, a low-dropout (LDO) voltage regulator that has output voltages that are selectable between 2.95-V Class-B and 1.8-V Class-C interfaces.

Note: The Exposed center thermal pad must be connected to Ground

The device has two supply voltage pins. VCC can be operated over the full range of 1.65 V to 3.3 V and VBATT from 2.3 to 5.5 V. VPWR is set to either 1.8 V or 2.95 V and is supplied by an internal LDO. The integrated LDO accepts input voltages as high as 5.5 V and outputs either 1.8 V or 2.95 V at 50 mA to the B-side circuitry and to the external SIM card. The TXS4555 enables system designers to easily interface low-voltage microprocessors to SIM cards operating at 1.8 V or 2.95 V.

The TXS4555 also incorporates shutdown sequence for the SIM card pins based on the ISO 7816-3 specification for SIM cards. Proper shutdown of the SIM card signals helps in prevention of corruption of data during accidental shutdown of the phone. The device also has 8kV HBM protection for the SIM pins and standard 2kV HBM protection for all the other pins.

The TXS4555 is a complete Smart Identity Module (SIM) card solution for interfacing wireless baseband processors with a SIM card to store I/O for mobile handset applications. The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards. It includes a high-speed level translator capable of supporting Class-B (2.95 V) and Class-C (1.8 V) interfaces, a low-dropout (LDO) voltage regulator that has output voltages that are selectable between 2.95-V Class-B and 1.8-V Class-C interfaces.

Note: The Exposed center thermal pad must be connected to Ground

The device has two supply voltage pins. VCC can be operated over the full range of 1.65 V to 3.3 V and VBATT from 2.3 to 5.5 V. VPWR is set to either 1.8 V or 2.95 V and is supplied by an internal LDO. The integrated LDO accepts input voltages as high as 5.5 V and outputs either 1.8 V or 2.95 V at 50 mA to the B-side circuitry and to the external SIM card. The TXS4555 enables system designers to easily interface low-voltage microprocessors to SIM cards operating at 1.8 V or 2.95 V.

The TXS4555 also incorporates shutdown sequence for the SIM card pins based on the ISO 7816-3 specification for SIM cards. Proper shutdown of the SIM card signals helps in prevention of corruption of data during accidental shutdown of the phone. The device also has 8kV HBM protection for the SIM pins and standard 2kV HBM protection for all the other pins.

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技術資料

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種類 タイトル 最新の英語版をダウンロード 日付
* データシート 1.8V/3V SIM CARD POWER SUPPLY WITH LEVEL TRANSLATOR データシート (Rev. B) 2013年 8月 27日
アプリケーション・ノート Schematic Checklist - A Guide to Designing with Auto-Bidirectional Translators PDF | HTML 2024年 7月 12日
アプリケーション・ノート Understanding Transient Drive Strength vs. DC Drive Strength in Level-Shifters (Rev. A) PDF | HTML 2024年 7月 3日
セレクション・ガイド Voltage Translation Buying Guide (Rev. A) 2021年 4月 15日

設計および開発

その他のアイテムや必要なリソースを参照するには、以下のタイトルをクリックして詳細ページをご覧ください。

シミュレーション・モデル

TXS4555 IBIS Model

SBOM452.ZIP (47 KB) - IBIS Model
パッケージ ピン数 CAD シンボル、フットプリント、および 3D モデル
UQFN (RUT) 12 Ultra Librarian
VQFN (RGT) 16 Ultra Librarian

購入と品質

記載されている情報:
  • RoHS
  • REACH
  • デバイスのマーキング
  • リード端子の仕上げ / ボールの原材料
  • MSL 定格 / ピーク リフロー
  • MTBF/FIT 推定値
  • 使用原材料
  • 認定試験結果
  • 継続的な信頼性モニタ試験結果
記載されている情報:
  • ファブの拠点
  • 組み立てを実施した拠点

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