SN74ALVC00-EP

ACTIVE

Product details

Technology family ALVC Supply voltage (min) (V) 1.65 Supply voltage (max) (V) 3.6 Number of channels 4 Inputs per channel 2 IOL (max) (mA) 24 IOH (max) (mA) -24 Input type Standard CMOS Output type Push-Pull Features Ultra high speed (tpd <5ns) Data rate (max) (Mbps) 150 Rating HiRel Enhanced Product Operating temperature range (°C) -40 to 85
Technology family ALVC Supply voltage (min) (V) 1.65 Supply voltage (max) (V) 3.6 Number of channels 4 Inputs per channel 2 IOL (max) (mA) 24 IOH (max) (mA) -24 Input type Standard CMOS Output type Push-Pull Features Ultra high speed (tpd <5ns) Data rate (max) (Mbps) 150 Rating HiRel Enhanced Product Operating temperature range (°C) -40 to 85
SOIC (D) 14 51.9 mm² 8.65 x 6
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree
  • ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015;
    Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
  • Operates From 1.65 V to 3.6 V
  • Max tpd of 3 ns at 3.3 V
  • ±24-mA Output Drive at 3.3 V
  • Latch-Up Performance Exceeds 250 mA Per JESD 17

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.

  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree
  • ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015;
    Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
  • Operates From 1.65 V to 3.6 V
  • Max tpd of 3 ns at 3.3 V
  • ±24-mA Output Drive at 3.3 V
  • Latch-Up Performance Exceeds 250 mA Per JESD 17

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.

The SN74ALVC00 quadruple 2-input positive-NAND gate is designed for 1.65-V to 3.6-V VCC operation.

The device performs the Boolean function Y = (A • B)\ or Y = A\ + B\ in positive logic.

The SN74ALVC00 quadruple 2-input positive-NAND gate is designed for 1.65-V to 3.6-V VCC operation.

The device performs the Boolean function Y = (A • B)\ or Y = A\ + B\ in positive logic.

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Technical documentation

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Type Title Date
* Data sheet SN74ALVC00-EP datasheet (Rev. A) 20 May 2004
* VID SN74ALVC00-EP VID V6204685 21 Jun 2016
Selection guide Logic Guide (Rev. AB) 12 Jun 2017
Application note Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 02 Dec 2015
User guide LOGIC Pocket Data Book (Rev. B) 16 Jan 2007
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 08 Jul 2004
Application note TI IBIS File Creation, Validation, and Distribution Processes 29 Aug 2002
User guide ALVC Advanced Low-Voltage CMOS Including SSTL, HSTL, And ALB (Rev. B) 01 Aug 2002
More literature Standard Linear & Logic for PCs, Servers & Motherboards 13 Jun 2002
Application note 16-Bit Widebus Logic Families in 56-Ball, 0.65-mm Pitch Very Thin Fine-Pitch BGA (Rev. B) 22 May 2002
Application note Benefits & Issues of Migrating 5-V and 3.3-V Logic to Lower-Voltage Supplies (Rev. A) 08 Sep 1999
Application note TI SN74ALVC16835 Component Specification Analysis for PC100 03 Aug 1998
Application note Logic Solutions for PC-100 SDRAM Registered DIMMs (Rev. A) 13 May 1998
Application note Migration From 3.3-V To 2.5-V Power Supplies For Logic Devices 01 Dec 1997
Application note Bus-Interface Devices With Output-Damping Resistors Or Reduced-Drive Outputs (Rev. A) 01 Aug 1997
Application note CMOS Power Consumption and CPD Calculation (Rev. B) 01 Jun 1997
Application note Input and Output Characteristics of Digital Integrated Circuits 01 Oct 1996
Application note Live Insertion 01 Oct 1996
Application note Understanding Advanced Bus-Interface Products Design Guide 01 May 1996

Design & development

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