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氮化鎵 (GaN) 功率級

LMG3626

現行

具有整合式驅動器、防護和電流感測的 650V 270mΩ GaN FET

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產品規格表

LMG3626

現行
產品規格表 立即訂購

產品詳細資料

VDS (max) (V) 650 RDS(on) (mΩ) 270 ID (max) (A) 3.6 Features Bottom-side cooled, Current sense, Cycle-by-cycle overcurrent protection, Enable pin, Low Quiescent Current, Low standby current, Overtemperature protection, Slew Rate Control, Wide input voltage Rating Catalog Operating temperature range (°C) -40 to 125
VDS (max) (V) 650 RDS(on) (mΩ) 270 ID (max) (A) 3.6 Features Bottom-side cooled, Current sense, Cycle-by-cycle overcurrent protection, Enable pin, Low Quiescent Current, Low standby current, Overtemperature protection, Slew Rate Control, Wide input voltage Rating Catalog Operating temperature range (°C) -40 to 125
VQFN (REQ) 38 42.4 mm² 8 x 5.3
  • 650-V 270-mΩ GaN power FET
  • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control
  • Current-sense emulation with high bandwidth and high accuracy
  • Cycle-by-cycle overcurrent protection
  • Overtemperature protection with FLT pin reporting
  • AUX quiescent current: 240 µA
  • AUX standby quiescent current: 50 µA
  • Maximum supply and input logic pin voltage: 26 V
  • 8 mm × 5.3 mm QFN package with thermal pad
  • 650-V 270-mΩ GaN power FET
  • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control
  • Current-sense emulation with high bandwidth and high accuracy
  • Cycle-by-cycle overcurrent protection
  • Overtemperature protection with FLT pin reporting
  • AUX quiescent current: 240 µA
  • AUX standby quiescent current: 50 µA
  • Maximum supply and input logic pin voltage: 26 V
  • 8 mm × 5.3 mm QFN package with thermal pad

The LMG3626 is a 650-V 270-mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3626 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8-mm by 5.3-mm QFN package.

Programmable turn-on slew rates provide EMI and ringing control. The current-sense emulation reduces power dissipation compared to the traditional currentsense resistor and allows the low-side thermal pad to be connected to the cooling PCB power ground.

The LMG3626 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include under-voltage lockout (UVLO), cycle-by-cycle current limit, and overtemperature protection. Overtemperature protection is reported with the opendrain FLT pin.

The LMG3626 is a 650-V 270-mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3626 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8-mm by 5.3-mm QFN package.

Programmable turn-on slew rates provide EMI and ringing control. The current-sense emulation reduces power dissipation compared to the traditional currentsense resistor and allows the low-side thermal pad to be connected to the cooling PCB power ground.

The LMG3626 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include under-voltage lockout (UVLO), cycle-by-cycle current limit, and overtemperature protection. Overtemperature protection is reported with the opendrain FLT pin.
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類型 標題 日期
* Data sheet LMG3626650-V270-mΩ GaN FET With Integrated Driverand Current-Sense Emulation datasheet (Rev. A) PDF | HTML 2023年 11月 14日
Certificate BEAGLEY-AI FCC Test Report 2024年 6月 25日
Technical article The benefits of low-power GaN in common AC/DC power topologies PDF | HTML 2024年 1月 30日
Application brief Maximize System Efficiency With Integrated Current Sensing From TI GaN PDF | HTML 2023年 11月 30日
Product overview Designing With the LMG362x Family of Low-Power GaN FETs PDF | HTML 2023年 11月 28日
Certificate LMG3626EVM-074 EU Declaration of Conformity (DoC) 2023年 9月 22日

設計與開發

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開發板

LMG3626EVM-074 — 適用於具 USB type-C® PD 的 65-W 準諧振返馳轉換器的 LMG3626 評估模組

LMG3626EVM-074 評估模組 (EVM) 使用具備整合電流感測模擬功能與 GaN FET 整合的 LMG3626，展示 65-W USB Type-C® 電力輸送 (PD) 離線轉接器的高效率和高密度。輸入支援通用 90 Vac 至 265 Vac，單輸出在最大電流 3-A 時可設爲 5 V、9 V 和 15 V，最大電流 3.25-A 時則為 20 V，可透過 USB PD 介面控制器進行調整。高達 200-kHz 額定值的高頻運作，可實現較小的解決方案尺寸，同時多模式運作可保持高效率。輸出則採用同步整流以提升效率。

使用指南: PDF | HTML
要求
計算工具

LMG36XX-CALC — LMG36XX Quasi-Resonant Flyback Power Stage Design Calculator

The purpose of this tool is to aid in the design of the main power stage components of a Quasi-Resonant Flyback Converter (QR) with the use LMG36XX integrated GaN FET. Calculations are provided for frequency, voltage/current stresses, and losses in converter.
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支援產品和硬體

產品
氮化鎵 (GaN) 功率級
LMG3612 — 具有整合式驅動器和防護功能的 650-V 120-mΩ GaN FET LMG3616 — 具有整合式驅動器和防護功能的 650-V 270-mΩ GaN FET LMG3622 — 具有整合式驅動器、防護和電流感測的 650V 120mΩ GaN FET LMG3624 — 具有整合式驅動器、防護和電流感測的 650V 170mΩ GaN FET LMG3626 — 具有整合式驅動器、防護和電流感測的 650V 270mΩ GaN FET
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