LMG3624

現行

具有整合式驅動器、防護和電流感測的 650V 170mΩ GaN FET

產品詳細資料

VDS (max) (V) 650 RDS(on) (mΩ) 170 ID (max) (A) 6 Features Bottom-side cooled, Current sense, Cycle-by-cycle overcurrent protection, Enable pin, Low Quiescent Current, Low standby current, Overtemperature protection, Slew Rate Control, Wide input voltage Rating Catalog Operating temperature range (°C) -40 to 125
VDS (max) (V) 650 RDS(on) (mΩ) 170 ID (max) (A) 6 Features Bottom-side cooled, Current sense, Cycle-by-cycle overcurrent protection, Enable pin, Low Quiescent Current, Low standby current, Overtemperature protection, Slew Rate Control, Wide input voltage Rating Catalog Operating temperature range (°C) -40 to 125
VQFN (REQ) 38 42.4 mm² 8 x 5.3
  • 650V 170mΩ GaN power FET
  • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control
  • Current-sense emulation with high bandwidth and high accuracy
  • Cycle-by-cycle overcurrent protection
  • Overtemperature protection with FLT pin reporting
  • AUX quiescent current: 240µA
  • AUX standby quiescent current: 50µA
  • Maximum supply and input logic pin voltage: 26V
  • 8mm × 5.3mm QFN package with thermal pad
  • 650V 170mΩ GaN power FET
  • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control
  • Current-sense emulation with high bandwidth and high accuracy
  • Cycle-by-cycle overcurrent protection
  • Overtemperature protection with FLT pin reporting
  • AUX quiescent current: 240µA
  • AUX standby quiescent current: 50µA
  • Maximum supply and input logic pin voltage: 26V
  • 8mm × 5.3mm QFN package with thermal pad

The LMG3624 is a 650V 170mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3624 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8mm by 5.3mm QFN package.

Programmable turn-on slew rates provide EMI and ringing control. The current-sense emulation reduces power dissipation compared to the traditional current-sense resistor and allows the low-side thermal pad to be connected to the cooling PCB power ground.

The LMG3624 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include under-voltage lockout (UVLO), cycle-by-cycle current limit, and overtemperature protection. Overtemperature protection is reported with the open-drain FLT pin.

The LMG3624 is a 650V 170mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3624 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8mm by 5.3mm QFN package.

Programmable turn-on slew rates provide EMI and ringing control. The current-sense emulation reduces power dissipation compared to the traditional current-sense resistor and allows the low-side thermal pad to be connected to the cooling PCB power ground.

The LMG3624 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include under-voltage lockout (UVLO), cycle-by-cycle current limit, and overtemperature protection. Overtemperature protection is reported with the open-drain FLT pin.

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類型 標題 日期
* Data sheet LMG3624 650V 170 mΩ GaN FET With Integrated Driver and Current-Sense Emulation datasheet (Rev. A) PDF | HTML 2024年 6月 12日
Technical article The benefits of low-power GaN in common AC/DC power topologies PDF | HTML 2024年 1月 30日
Application brief Maximize System Efficiency With Integrated Current Sensing From TI GaN PDF | HTML 2023年 11月 30日
Product overview Designing With the LMG362x Family of Low-Power GaN FETs PDF | HTML 2023年 11月 28日

設計與開發

如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

LMG3624EVM-081 — 適用於具 USB Type-C® PD 的 65-W 準諧振返馳轉換器的 LMG3624 評估模組

LMG3624EVM-081 使用具備整合電流感測模擬功能與 GaN FET 的 LMG3624,展示 65-W USB Type-C® 電力傳輸 (PD) 離線轉接器的高效率和高密度。輸入支援通用 90 Vac 至 265 Vac,單輸出在最大電流 3-A 時可設爲 5 V、9 V 和 15 V,最大電流 3.25-A 時則為 20 V,可透過 USB PD 介面控制器進行調整。高達 200-kHz 額定值的高頻運作,可實現較小的解決方案尺寸,同時多模式運作可保持高效率。輸出則採用同步整流以提升效率。

使用指南: PDF | HTML
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計算工具

LMG36XX-CALC LMG36XX Quasi-Resonant Flyback Power Stage Design Calculator

The purpose of this tool is to aid in the design of the main power stage components of a Quasi-Resonant Flyback Converter (QR) with the use LMG36XX integrated GaN FET. Calculations are provided for frequency, voltage/current stresses, and losses in converter.
支援產品和硬體

支援產品和硬體

產品
氮化鎵 (GaN) 功率級
LMG3612 具有整合式驅動器和防護功能的 650-V 120-mΩ GaN FET LMG3616 具有整合式驅動器和防護功能的 650-V 270-mΩ GaN FET LMG3622 具有整合式驅動器、防護和電流感測的 650V 120mΩ GaN FET LMG3624 具有整合式驅動器、防護和電流感測的 650V 170mΩ GaN FET LMG3626 具有整合式驅動器、防護和電流感測的 650V 270mΩ GaN FET
參考設計

TIDA-050072 — 65W GaN 架構 USB PD3.0 USB-C 變壓器參考設計

此參考設計是一款 65W USB PD3.0 變壓器,適用於行動電話、筆記型電腦和平板電腦等各種充電應用。此設計透過使用具備電流感測模擬功能的 LMG3624 整合式 GaN FET,實現了高效率與高功率密度。準諧振返馳可提供高效率,在精簡性與低切換損耗之間取得了平衡。
Design guide: PDF
封裝 針腳 CAD 符號、佔位空間與 3D 模型
VQFN (REQ) 38 Ultra Librarian

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  • 認證摘要
  • 進行中持續性的可靠性監測
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