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邏輯和電壓轉換
電壓轉換器及電平移位器
自動方向電壓轉換器

TXB0102

現行

具自動方向感測和 +/-15-kV ESD 保護的 2 位元雙向電壓位準移位器

立即訂購
產品規格表

TXB0102

現行
產品規格表 立即訂購

產品詳細資料

Technology family TXB Applications GPIO, SPI, UART Bits (#) 2 Data rate (max) (Mbps) 100 High input voltage (min) (V) 0.78 High input voltage (max) (V) 5.5 Vout (min) (V) 1.2 Vout (max) (V) 5.5 IOH (max) (mA) -0.02 IOL (max) (mA) 0.02 Supply current (max) (µA) 8 Features Edge rate accelerator, Integrated pullup resistors, Output enable, Partial power down (Ioff), Vcc isolation Input type Standard CMOS Output type 3-State, CMOS, Push-Pull Rating Catalog Operating temperature range (°C) -40 to 85
Technology family TXB Applications GPIO, SPI, UART Bits (#) 2 Data rate (max) (Mbps) 100 High input voltage (min) (V) 0.78 High input voltage (max) (V) 5.5 Vout (min) (V) 1.2 Vout (max) (V) 5.5 IOH (max) (mA) -0.02 IOL (max) (mA) 0.02 Supply current (max) (µA) 8 Features Edge rate accelerator, Integrated pullup resistors, Output enable, Partial power down (Ioff), Vcc isolation Input type Standard CMOS Output type 3-State, CMOS, Push-Pull Rating Catalog Operating temperature range (°C) -40 to 85
DSBGA (YZP) 8 2.8125 mm² 2.25 x 1.25 VSSOP (DCU) 8 6.2 mm² 2 x 3.1
  • Available in the Texas Instruments NanoFree™ Packages
  • 1.2 V to 3.6 V on A Port and 1.65 V to 5.5 V On B Port (V CCA ≤ V CCB)
  • V CC Isolation Feature – If Either V CC Input Is at GND, All Outputs Are in the High-Impedance State
  • OE Input Circuit Referenced to V CCA
  • Low Power Consumption, 4-µA Max I CC
  • I off Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Protection Exceeds JESD 22
    • A Port
      • 2500-V Human-Body Model (A114-B)
      • 200-V Machine Model (A115-A)
      • 1500-V Charged-Device Model (C101)
    • B Port
      • 15-kV Human-Body Model (A114-B)
      • 200-V Machine Model (A115-A)
      • 1500-V Charged-Device Model (C101)
  • Available in the Texas Instruments NanoFree™ Packages
  • 1.2 V to 3.6 V on A Port and 1.65 V to 5.5 V On B Port (V CCA ≤ V CCB)
  • V CC Isolation Feature – If Either V CC Input Is at GND, All Outputs Are in the High-Impedance State
  • OE Input Circuit Referenced to V CCA
  • Low Power Consumption, 4-µA Max I CC
  • I off Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Protection Exceeds JESD 22
    • A Port
      • 2500-V Human-Body Model (A114-B)
      • 200-V Machine Model (A115-A)
      • 1500-V Charged-Device Model (C101)
    • B Port
      • 15-kV Human-Body Model (A114-B)
      • 200-V Machine Model (A115-A)
      • 1500-V Charged-Device Model (C101)

The TXB0102 device is a 2-bit noninverting translator that uses two separate configurable power-supply rails. The A port is designed to track V CCA. V CCA accepts any supply voltage from 1.2 V to 3.6 V. The B port is designed to track V CCB. V CCB accepts any supply voltage from 1.65 V to 5.5 V. This allows for universal low-voltage bidirectional translation between any of the 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, and 5-V voltage nodes. V CCA must not exceed V CCB.

When the output-enable (OE) input is low, all outputs are placed in the high-impedance state.

This device is fully specified for partial-power-down applications using I off. The I off circuitry disables the outputs when the device is powered down. This inhibits current backflow into the device which prevents damage to the device.

OE must be tied to GND through a pulldown resistor to assure the high-impedance state during power up or power down; the minimum value of the resistor is determined by the current-sourcing capability of the driver.

NanoFree™ technology is a major breakthrough in IC packaging concepts, using the die as the package.

The TXB0102 device is a 2-bit noninverting translator that uses two separate configurable power-supply rails. The A port is designed to track V CCA. V CCA accepts any supply voltage from 1.2 V to 3.6 V. The B port is designed to track V CCB. V CCB accepts any supply voltage from 1.65 V to 5.5 V. This allows for universal low-voltage bidirectional translation between any of the 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, and 5-V voltage nodes. V CCA must not exceed V CCB.

When the output-enable (OE) input is low, all outputs are placed in the high-impedance state.

This device is fully specified for partial-power-down applications using I off. The I off circuitry disables the outputs when the device is powered down. This inhibits current backflow into the device which prevents damage to the device.

OE must be tied to GND through a pulldown resistor to assure the high-impedance state during power up or power down; the minimum value of the resistor is determined by the current-sourcing capability of the driver.

NanoFree™ technology is a major breakthrough in IC packaging concepts, using the die as the package.
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引腳對引腳且具備與所比較裝置相同的功能
TXU0102 現行 具相同方向通道之雙通道固定方向位準移位器 2 channel fixed direction level translator
TXU0202 現行 具有反向通道的雙通道固定方向位準移位器 2 channel fixed direction level translator
功能相同，但引腳輸出與所比較的裝置不同
TXB0104 現行 具自動方向感測和 +/-15-kV ESD 保護的 4 位元雙向電壓位準移位器 Same function for 4-channel voltage translator
TXB0108 現行 具自動方向感測和 +/-15-kV ESD 保護的 8 位元雙向電壓位準移位器 Same function in 8-channel version

技術文件

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類型 標題 日期
* Data sheet TXB0102 2-Bit Bidirectional Voltage-Level Translator With Auto Direction Sensing and ±15-kV ESD Protection datasheet (Rev. E) PDF | HTML 2023年 10月 17日
Application note Schematic Checklist - A Guide to Designing with Auto-Bidirectional Translators PDF | HTML 2024年 7月 12日
Application note Understanding Transient Drive Strength vs. DC Drive Strength in Level-Shifters (Rev. A) PDF | HTML 2024年 7月 3日
Application note Leveraging Edge Rate Accelerators with Auto-Sensing Level Shifters PDF | HTML 2023年 9月 29日
Application note Do’s and Don’ts for TXB and TXS Voltage Level-Shifters with Edge Rate Accelerato PDF | HTML 2023年 6月 28日
EVM User's guide TXB-EVM Evaluation Module User's Guide (Rev. A) PDF | HTML 2021年 8月 2日
Selection guide Voltage Translation Buying Guide (Rev. A) 2021年 4月 15日
Application note Effects of pullup and pulldown resistors on TXS and TXB devices (Rev. A) 2018年 3月 28日
Application note Factors Affecting VOL for TXS and LSF Auto-bidirectional Translation Devices 2017年 11月 19日
Application note Biasing Requirements for TXS, TXB, and LSF Auto-Bidirectional Translators 2017年 10月 30日
Application note A Guide to Voltage Translation With TXS-Type Translators 2010年 6月 29日
Application note A Guide to Voltage Translation With TXB-Type Translators 2010年 3月 3日

設計與開發

如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

5-8-LOGIC-EVM — 適用於 5 針腳至 8 針腳 DCK、DCT、DCU、DRL 和 DBV 封裝的通用邏輯評估模組

靈活的 EVM 旨在支援任何針腳數為 5 至 8 支且採用 DCK、DCT、DCU、DRL 或 DBV 封裝的裝置。
使用指南: PDF
TI.com 無法提供
開發板

TXB-EVM — 1 至 8 位元 TXB 轉換器系列評估模組

This EVM is designed to support the TXB auto bidirectional families for single, dual, four and eight channel devices. The TXB devices belong to the auto bidirectional translation family with an operating voltage designed to level translation between 1.2V and 5.5 V.
使用指南: PDF | HTML
TI.com 無法提供
模擬型號

TXB0102 IBIS Model (Rev. A)

SCEM563A.ZIP (71 KB) - IBIS Model
下載
參考設計

TIDM-RF430FRLSENSE — RF430FRL152H NFC 溫度及燈光感測器參考設計

This reference design provides a platform to evaluate the RF430FRL152H NFC Sensor Interface Transponder.  Directly out of the box, thermistor and photo transistor measurements can be communicated to an NFC enabled smart phone or other NFC/RFID Reader device.  This reference design can be (...)
電路圖: PDF
參考設計

TIDA-00403 — 使用 TLV320AIC3268 miniDSP 轉碼器的超音波距離量測參考設計

The TIDA-00403 reference design uses off-the-shelf EVMs for ultrasonic distance measurement solutions using algorithms within the TLV320AIC3268 miniDSP. In conjunction with TI’s PurePath Studio design suite, a robust and user configurable ultrasonic distance measurement system can be designed (...)
Design guide: PDF
電路圖: PDF
封裝 針腳 CAD 符號、佔位空間與 3D 模型
DSBGA (YZP) 8 Ultra Librarian
VSSOP (DCU) 8 Ultra Librarian
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訂購與品質

內含資訊：
  • RoHS
  • REACH
  • 產品標記
  • 鉛塗層/球物料
  • MSL 等級/回焊峰值
  • MTBF/FIT 估算值
  • 材料內容
  • 認證摘要
  • 進行中持續性的可靠性監測
內含資訊：
  • 晶圓廠位置
  • 組裝地點

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