TXB0106-Q1

現行

具自動方向感測的車用 6 位元雙向電壓位準轉換器

產品詳細資料

Technology family TXB Applications SPI Bits (#) 6 Data rate (max) (Mbps) 100 High input voltage (min) (V) 0.78 High input voltage (max) (V) 5.5 Vout (min) (V) 1.2 Vout (max) (V) 5.5 IOH (max) (mA) -0.02 IOL (max) (mA) 0.02 Supply current (max) (µA) 18 Features Edge rate accelerator, Integrated pullup resistors, Output enable, Partial power down (Ioff), Vcc isolation Input type Standard CMOS Output type 3-State, CMOS, Push-Pull Rating Automotive Operating temperature range (°C) -40 to 85
Technology family TXB Applications SPI Bits (#) 6 Data rate (max) (Mbps) 100 High input voltage (min) (V) 0.78 High input voltage (max) (V) 5.5 Vout (min) (V) 1.2 Vout (max) (V) 5.5 IOH (max) (mA) -0.02 IOL (max) (mA) 0.02 Supply current (max) (µA) 18 Features Edge rate accelerator, Integrated pullup resistors, Output enable, Partial power down (Ioff), Vcc isolation Input type Standard CMOS Output type 3-State, CMOS, Push-Pull Rating Automotive Operating temperature range (°C) -40 to 85
TSSOP (PW) 16 32 mm² 5 x 6.4
  • Qualified for Automotive Applications
  • 1.2 V to 3.6 V on A Port and 1.65 to 5.5 V on
    B Port (VCCA ≤ VCCB)
  • VCC Isolation Feature – If Either VCC Input Is at GND, All Outputs Are in the High-Impedance State
  • OE Input Circuit Referenced to VCCA
  • Ioff Supports Partial-Power-Down Mode Operation
  • ESD Protection Exceeds AEC-Q100
    • A Port
      • 2000-V Human-Body Model
      • 1500-V Charged-Device Model
    • B Port
      • ±10-kV Human-Body Model
      • 1500-V Charged-Device Model
  • Qualified for Automotive Applications
  • 1.2 V to 3.6 V on A Port and 1.65 to 5.5 V on
    B Port (VCCA ≤ VCCB)
  • VCC Isolation Feature – If Either VCC Input Is at GND, All Outputs Are in the High-Impedance State
  • OE Input Circuit Referenced to VCCA
  • Ioff Supports Partial-Power-Down Mode Operation
  • ESD Protection Exceeds AEC-Q100
    • A Port
      • 2000-V Human-Body Model
      • 1500-V Charged-Device Model
    • B Port
      • ±10-kV Human-Body Model
      • 1500-V Charged-Device Model

This 6-bit noninverting translator uses two separate configurable power-supply rails. The A port is designed to track VCCA. VCCA accepts any supply voltage from 1.2 V to 3.6 V. The B port is designed to track VCCB. VCCB accepts any supply voltage from 1.65 V to 5.5 V. This allows for universal low-voltage bidirectional translation between any of the 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, and 5-V voltage nodes. VCCA should not exceed VCCB.

When the output-enable (OE) input is low, all outputs are placed in the high-impedance state.

The TXB0106-Q1 device is designed so that the OE input circuit is supplied by VCCA.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.

This 6-bit noninverting translator uses two separate configurable power-supply rails. The A port is designed to track VCCA. VCCA accepts any supply voltage from 1.2 V to 3.6 V. The B port is designed to track VCCB. VCCB accepts any supply voltage from 1.65 V to 5.5 V. This allows for universal low-voltage bidirectional translation between any of the 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, and 5-V voltage nodes. VCCA should not exceed VCCB.

When the output-enable (OE) input is low, all outputs are placed in the high-impedance state.

The TXB0106-Q1 device is designed so that the OE input circuit is supplied by VCCA.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.

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類型 標題 日期
* Data sheet TXB0106-Q1 6-Bit Bidirectional Voltage-Level Translator With Auto-Direction Sensing and ±10-kV ESD Protection datasheet (Rev. A) PDF | HTML 2018年 4月 10日
Application note Schematic Checklist - A Guide to Designing with Auto-Bidirectional Translators PDF | HTML 2024年 7月 12日
Application note Understanding Transient Drive Strength vs. DC Drive Strength in Level-Shifters (Rev. A) PDF | HTML 2024年 7月 3日
Application note Leveraging Edge Rate Accelerators with Auto-Sensing Level Shifters PDF | HTML 2023年 9月 29日
Application note Do’s and Don’ts for TXB and TXS Voltage Level-Shifters with Edge Rate Accelerato PDF | HTML 2023年 6月 28日
Selection guide Voltage Translation Buying Guide (Rev. A) 2021年 4月 15日
More literature Automotive Logic Devices Brochure 2014年 8月 27日
Application note A Guide to Voltage Translation With TXS-Type Translators 2010年 6月 29日
Application note A Guide to Voltage Translation With TXB-Type Translators 2010年 3月 3日

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