TXS02326A
- Level Translator
- VDDIO Range of 1.7-V to 3.3-V
- Low-Dropout (LDO) Regulator
- 50-mA LDO Regulator With Enable
- 1.8-V or 2.95-V Selectable Output Voltage
- 2.3-V to 5.5-V Input Voltage Range
- Very Low Dropout: 100 mV (Max) at 50 mA
- Control and Communication Through I2C Interface
With Baseband Processor - ESD Protection Exceeds JESD 22
- 2500-V Human-Body Model (A114-B)
- 6000-V Human-Body Model (A114-B) on VSIM1, SIM1CLK,
SIM1I/O, SIM1RST, VSIM2, SIM2CLK, SIM2I/O, SIM2RST - 1000-V Charged-Device Model (C101)
- Package
- 24-Pin QFN (4 mm × 4 mm)
The TXS02326A is a complete dual-supply standby Smart Identity Module (SIM) card solution for interfacing wireless baseband processors with two individual SIM subscriber cards to store data for mobile handset applications. It is a custom device which is used to extend a single SIM/UICC interface to support two SIMs/UICCs.
The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards. It includes a high-speed level translator capable of supporting Class-B (2.95-V) and Class-C (1.8-V) interfaces; two low-dropout (LDO) voltage regulators with output voltages that are selectable between 2.95-V Class-B and 1.8-V Class-C interfaces; an integrated "fast-mode" 400 kb/s "slave" I2C control register interface, for configuration purposes; and a 32-kHz clock input, for internal timing generation. The TXS02326A also includes a shutdown input and a comparator input that detects battery pack removal to safely power-down the two SIM cards. The shutdown input and comparator input are equipped with two programmable debounce counter (i.e. BSI input and SDN input) circuits realized by an 8 bit counter.
The voltage-level translator has two supply voltage pins. VDDIO sets the reference for the baseband interface and can be operated from 1.7-V to 3.3-V. VSIM1 and VSIM2 are programmed to either 1.8-V or 2.95-V, each supplied by an independent internal LDO regulator. The integrated LDO accepts input battery voltages from 2.3-V to 5.5-V and outputs up to 50 mA to the B-side circuitry and external Class-B or Class-C SIM card.
技術文件
類型 | 標題 | 日期 | ||
---|---|---|---|---|
* | Data sheet | Dual-Supply 2:1 SIM Card Multiplexer/Translator With Automatic Detection datasheet (Rev. A) | 2013年 8月 2日 | |
Application note | Schematic Checklist - A Guide to Designing with Auto-Bidirectional Translators | PDF | HTML | 2024年 7月 12日 | |
Application note | Understanding Transient Drive Strength vs. DC Drive Strength in Level-Shifters (Rev. A) | PDF | HTML | 2024年 7月 3日 | |
Selection guide | Voltage Translation Buying Guide (Rev. A) | 2021年 4月 15日 |
設計與開發
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封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
---|---|---|
VQFN (RGE) | 24 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
- 晶圓廠位置
- 組裝地點