This reference design is a GaN-based 3-kW phase-shifted full bridge (PSFB) targeting maximum power density. The design has an active clamp to minimize voltage stress on the secondary synchronous rectifier MOSFETs enabling use of lower voltage-rating MOSFETs with better figure-of-merit (FoM). PMP23126 uses our 30mΩ GaN on the primary side and silicon MOSFETs on the secondary side. The LMG3522 top-side cooled GaN with integrated driver and protection enables higher efficiency by maintaining ZVS over a wider range of operation compared to Si MOSFET. The PSFB operates at 100 kHz and achieves a peak efficiency of 97.74%.
Features
- > 270-W/in3 power density in an x-y dimension of less than 68 mm x 102 mm and max height of 32 mm
- Peak efficiency of 97.74%
- Active clamp for minimizing voltage stress on SR MOSFETs enabling use of better FoM devices
- GaN optimized with driver integration