SNOAA68 June   2021 LMG3410R050 , LMG3410R070 , LMG3410R150 , LMG3411R050 , LMG3411R070 , LMG3411R150 , LMG3422R030 , LMG3422R050 , LMG3425R030 , LMG3425R050 , LMG3522R030-Q1 , LMG3526R030

 

  1.   Trademarks
  2. 1 Introduction
  3. 2 Background
  4. 3 Addressing GaN Failure Mechanisms
  5. 4 Achieving Lifetime Reliability
  6. 5 Achieving Lifetime Switching
  7. 6 Achieving Reliable Design
  8. 7 Achieving Surge Robustness
  9. 8 System-Level Reliability and Protection
  10. 9 Automotive
  11. 10Conclusion
  12. 11References

9 Automotive

TI’s new AEC Q-100 rated GaN FETs can help reduce the size of electric vehicle (EV) onboard chargers and DC/DC converters by as much as 50% compared to existing Si or SiC solutions, offering electric vehicles an extended battery range with increased system reliability at a lower design cost.

In addition to the GaN-specific testing described in the prior sections of this white paper, TI’s automotive GaN products are subjected to AEC Q100 testing. A primary difference between AEC Q100 and JESD47 qualification is that the Q100 product is qualified based upon the temperature grade(27). Our initial automotive parts will be released at grade 1. TI's methodology is also able to evaluate products for a range of operating conditions, given a mission profile, for both switching stress(19) and TDB failure mechanisms.