SN74CB3Q16211

Name: SN74CB3Q16211
Brand: TI
SKU: SN74CB3Q16211
Price: 0.9 USD

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24-Kanal-Universal-FET-Busschalter, 3,3 V, 1:1 (SPST)

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Datenblatt

document-pdfAcrobat SN74CB3Q16211 24-Bit Switch 2.5-V/3.3-V Low-Voltage FET Bus Switch datasheet (Rev. A) (Englisch) PDF | HTML

SN74CB3Q16211

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Datenblatt

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Produktdetails

Configuration

1:1 SPST

Number of channels

24

Power supply voltage - single (V)

2.5, 3.3

Protocols

Analog

Ron (typ) (Ω)

5

CON (typ) (pF)

10

Supply current (typ) (µA)

1000

Bandwidth (MHz)

500

Operating temperature range (°C)

-40 to 85

Features

Powered-off protection, Supports input voltage beyond supply

Input/output continuous current (max) (mA)

64

Rating

Catalog

Drain supply voltage (max) (V)

3.6

Supply voltage (max) (V)

3.6

Configuration

1:1 SPST

Number of channels

24

Power supply voltage - single (V)

2.5, 3.3

Protocols

Analog

Ron (typ) (Ω)

5

CON (typ) (pF)

10

Supply current (typ) (µA)

1000

Bandwidth (MHz)

500

Operating temperature range (°C)

-40 to 85

Features

Powered-off protection, Supports input voltage beyond supply

Input/output continuous current (max) (mA)

64

Rating

Catalog

Drain supply voltage (max) (V)

3.6

Supply voltage (max) (V)

3.6

SSOP (DL)

56

190.647 mm² 18.42 x 10.35

TSSOP (DGG)

56

113.4 mm² 14 x 8.1

TVSOP (DGV)

56

72.32 mm² 11.3 x 6.4

Member of the Texas Instruments Widebus family
High-bandwidth data path (up to 500 MHz⁽¹⁾)
5-V tolerant I/Os with device powered up or powered down
Low and flat ON-state resistance (r_on) characteristics over operating range (r_on = 5 Ω typical)
Rail-to-rail switching on data I/O ports
- 0-V to 5-V switching with 3.3-V V_CC
- 0-V to 3.3-V switching with 2.5-V V_CC
Bidirectional data flow, with near-zero propagation delay
Low input or output capacitance minimizes loading and signal distortion (C_io(OFF) = 4 pF typical)
Fast switching frequency (f_OE = 20 MHz maximum)
Data and control inputs provide undershoot clamp diodes
Low power consumption (I_CC = 1 mA typical)
V_CC operating range from 2.3 V to 3.6 V
Data I/Os support 0-V to 5-V signaling levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, and 5 V)
Control inputs can be driven by TTL or 5-V/3.3-V CMOS outputs
I_off supports partial-power-down mode operation
Latch-up Performance Exceeds 100 mA Per JESD 78, Class II
ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
Supports both digital and analog applications: PCI interface, differential signal interface, memory interleaving, bus isolation, low-distortion signal gating ⁽¹⁾

⁽¹⁾For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families .

Member of the Texas Instruments Widebus family
High-bandwidth data path (up to 500 MHz⁽¹⁾)
5-V tolerant I/Os with device powered up or powered down
Low and flat ON-state resistance (r_on) characteristics over operating range (r_on = 5 Ω typical)
Rail-to-rail switching on data I/O ports
- 0-V to 5-V switching with 3.3-V V_CC
- 0-V to 3.3-V switching with 2.5-V V_CC
Bidirectional data flow, with near-zero propagation delay
Low input or output capacitance minimizes loading and signal distortion (C_io(OFF) = 4 pF typical)
Fast switching frequency (f_OE = 20 MHz maximum)
Data and control inputs provide undershoot clamp diodes
Low power consumption (I_CC = 1 mA typical)
V_CC operating range from 2.3 V to 3.6 V
Data I/Os support 0-V to 5-V signaling levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, and 5 V)
Control inputs can be driven by TTL or 5-V/3.3-V CMOS outputs
I_off supports partial-power-down mode operation
Latch-up Performance Exceeds 100 mA Per JESD 78, Class II
ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
Supports both digital and analog applications: PCI interface, differential signal interface, memory interleaving, bus isolation, low-distortion signal gating ⁽¹⁾

⁽¹⁾For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families .

The SN74CB3Q16211 device is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (r_on). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q16211 device provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q16211 device is organized as two 12-bit bus switches with separate output-enable (1 OE, 2 OE) inputs. It can be used as two 12-bit bus switches or as one 24-bit bus switch. When OE is low, the associated 12-bit bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated 12-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using I_off. The I_off circuitry prevents damaging current backflow through the device when it is powered down.

To ensure the high-impedance state during power up or power down, OE should be tied to V_CC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CB3Q16211 device is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (r_on). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q16211 device provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q16211 device is organized as two 12-bit bus switches with separate output-enable (1 OE, 2 OE) inputs. It can be used as two 12-bit bus switches or as one 24-bit bus switch. When OE is low, the associated 12-bit bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated 12-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using I_off. The I_off circuitry prevents damaging current backflow through the device when it is powered down.

To ensure the high-impedance state during power up or power down, OE should be tied to V_CC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

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	Typ	Titel		Datum
*	Data sheet	SN74CB3Q16211 24-Bit Switch 2.5-V/3.3-V Low-Voltage FET Bus Switch datasheet (Rev. A)	PDF \| HTML	21 Jul 2022
	Application note	Selecting the Correct Texas Instruments Signal Switch (Rev. E)	PDF \| HTML	02 Jun 2022
	Application note	Multiplexers and Signal Switches Glossary (Rev. B)	PDF \| HTML	01 Dez 2021
	Application note	CBT-C, CB3T, and CB3Q Signal-Switch Families (Rev. C)	PDF \| HTML	19 Nov 2021
	Application brief	Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C)	PDF \| HTML	06 Jan 2021
	Selection guide	Logic Guide (Rev. AB)		12 Jun 2017
	Application note	Understanding and Interpreting Standard-Logic Data Sheets (Rev. C)		02 Dez 2015
	User guide	LOGIC Pocket Data Book (Rev. B)		16 Jan 2007
	More literature	Digital Bus Switch Selection Guide (Rev. A)		10 Nov 2004
	Application note	Semiconductor Packing Material Electrostatic Discharge (ESD) Protection		08 Jul 2004
	User guide	Signal Switch Data Book (Rev. A)		14 Nov 2003
	Application note	Bus FET Switch Solutions for Live Insertion Applications		07 Feb 2003

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