Typ)For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, literature number SCDA008.)
The SN74CB3Q3345 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3345 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.
The SN74CB3Q3384A is organized as an 8-bit bus switch with two output-enable (OE, OE) inputs. When OE is high or OE is low, the bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is low and OE is high, the bus switch is OFF, and a high-impedance state exists between the A and B ports.
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.
To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor and OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sinking/current-sourcing capability of the driver.
| Typ | Titel | Datum | ||
|---|---|---|---|---|
| * | Data sheet | SN74CB3Q3345 datasheet (Rev. B) | 21 Mär 2005 | |
| Application note | Selecting the Correct Texas Instruments Signal Switch (Rev. E) | PDF | HTML | 02 Jun 2022 | |
| Application note | Multiplexers and Signal Switches Glossary (Rev. B) | PDF | HTML | 01 Dez 2021 | |
| Application note | CBT-C, CB3T, and CB3Q Signal-Switch Families (Rev. C) | PDF | HTML | 19 Nov 2021 | |
| Application brief | Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C) | PDF | HTML | 06 Jan 2021 | |
| Selection guide | Logic Guide (Rev. AB) | 12 Jun 2017 | ||
| Application note | Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) | 02 Dez 2015 | ||
| User guide | LOGIC Pocket Data Book (Rev. B) | 16 Jan 2007 | ||
| More literature | Digital Bus Switch Selection Guide (Rev. A) | 10 Nov 2004 | ||
| Application note | Semiconductor Packing Material Electrostatic Discharge (ESD) Protection | 08 Jul 2004 | ||
| User guide | Signal Switch Data Book (Rev. A) | 14 Nov 2003 | ||
| Application note | Bus FET Switch Solutions for Live Insertion Applications | 07 Feb 2003 |
Weitere Bedingungen oder erforderliche Ressourcen enthält gegebenenfalls die Detailseite, die Sie durch Klicken auf einen der unten stehenden Titel erreichen.
The EVM-LEADED1 board allows for quick testing and bread boarding of TI's common leaded packages. The board has footprints to convert TI's D, DBQ, DCT,DCU, DDF, DGS, DGV, and PW surface mount packages to 100mil DIP headers.
| Gehäuse | Pins | CAD-Symbole, Footprints und 3D-Modelle |
|---|---|---|
| SSOP (DBQ) | 20 | Ultra Librarian |
| TSSOP (PW) | 20 | Ultra Librarian |
| TVSOP (DGV) | 20 | Ultra Librarian |
| VQFN (RGY) | 20 | Ultra Librarian |
Empfohlene Produkte können Parameter, Evaluierungsmodule oder Referenzdesigns zu diesem TI-Produkt beinhalten.
Inhalte werden ohne Gewähr von TI und der Community bereitgestellt. Sie stellen keine Spezifikationen von TI dar. Siehe Nutzungsbedingungen.
Bei Fragen zu den Themen Qualität, Gehäuse oder Bestellung von TI-Produkten siehe TI-Support.