Produktdetails

Configuration 1:1 SPST Number of channels 10 Power supply voltage - single (V) 2.5, 3.3 Protocols Analog Ron (typ) (Ω) 5 CON (typ) (pF) 4 ON-state leakage current (max) (µA) 20 Bandwidth (MHz) 100 Operating temperature range (°C) -40 to 85 Features Powered-off protection, Signal path translation Input/output continuous current (max) (mA) 128 Rating Catalog Drain supply voltage (max) (V) 3.6 Supply voltage (max) (V) 3.6
Configuration 1:1 SPST Number of channels 10 Power supply voltage - single (V) 2.5, 3.3 Protocols Analog Ron (typ) (Ω) 5 CON (typ) (pF) 4 ON-state leakage current (max) (µA) 20 Bandwidth (MHz) 100 Operating temperature range (°C) -40 to 85 Features Powered-off protection, Signal path translation Input/output continuous current (max) (mA) 128 Rating Catalog Drain supply voltage (max) (V) 3.6 Supply voltage (max) (V) 3.6
SOIC (DW) 24 159.65 mm² 15.5 x 10.3 SSOP (DBQ) 24 51.9 mm² 8.65 x 6 TSSOP (PW) 24 49.92 mm² 7.8 x 6.4
  • Output Voltage Translation Tracks VCC
  • Supports Mixed-Mode Signal Operation On All Data I/O Ports
    • 5-V Input Down To 3.3-V Output Level Shift With 3.3-V VCC
    • 5-V/3.3-V Input Down To 2.5-V Output Level Shift With 2.5-V VCC
  • 5-V-Tolerant I/Os With Device Powered-Up or Powered-Down
  • Bidirectional Data Flow, With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron) Characteristics (ron = 5 Typical)
  • Low Input/Output Capacitance Minimizes Loading (Cio(OFF) - 5 pF Typical)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 40µA Max)
  • VCC Operating Range From 2.3 V to 3.6 V
  • Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
  • Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 250 mA Per JESD 17
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Digital Applications: Level Translation, Memory Interleaving, Bus Isolation
  • Ideal for Low-Power Portable Equipment

  • Output Voltage Translation Tracks VCC
  • Supports Mixed-Mode Signal Operation On All Data I/O Ports
    • 5-V Input Down To 3.3-V Output Level Shift With 3.3-V VCC
    • 5-V/3.3-V Input Down To 2.5-V Output Level Shift With 2.5-V VCC
  • 5-V-Tolerant I/Os With Device Powered-Up or Powered-Down
  • Bidirectional Data Flow, With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron) Characteristics (ron = 5 Typical)
  • Low Input/Output Capacitance Minimizes Loading (Cio(OFF) - 5 pF Typical)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 40µA Max)
  • VCC Operating Range From 2.3 V to 3.6 V
  • Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
  • Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 250 mA Per JESD 17
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Digital Applications: Level Translation, Memory Interleaving, Bus Isolation
  • Ideal for Low-Power Portable Equipment

The SN74CB3T3384 is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. The device fully supports mixed-mode signal operation on all data I/O ports by providing voltage translation that tracks VCC. The SN74CB3T3384 supports systems using 5-V TTL, 3.3-V LVTTL, and 2.5-V CMOS switching standards, as well as user-defined switching levels (see Figure 1).

The SN74CB3T3384 is organized as two 5-bit bus switches with separate ouput-enable (1OE\, 2OE\) inputs. It can be used as two 5-bit bus switches or as one 10-bit bus switch. When OE\ is low, the associated 5-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the associated 5-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CB3T3384 is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. The device fully supports mixed-mode signal operation on all data I/O ports by providing voltage translation that tracks VCC. The SN74CB3T3384 supports systems using 5-V TTL, 3.3-V LVTTL, and 2.5-V CMOS switching standards, as well as user-defined switching levels (see Figure 1).

The SN74CB3T3384 is organized as two 5-bit bus switches with separate ouput-enable (1OE\, 2OE\) inputs. It can be used as two 5-bit bus switches or as one 10-bit bus switch. When OE\ is low, the associated 5-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the associated 5-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

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Typ Titel Datum
* Data sheet SN74CB3T3384 datasheet (Rev. B) 24 Mär 2004
Application note Selecting the Correct Texas Instruments Signal Switch (Rev. E) PDF | HTML 02 Jun 2022
Application note Multiplexers and Signal Switches Glossary (Rev. B) PDF | HTML 01 Dez 2021
Application note CBT-C, CB3T, and CB3Q Signal-Switch Families (Rev. C) PDF | HTML 19 Nov 2021
Application brief Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C) PDF | HTML 06 Jan 2021
Selection guide Logic Guide (Rev. AB) 12 Jun 2017
Application note How to Select Little Logic (Rev. A) 26 Jul 2016
Application note Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 02 Dez 2015
User guide LOGIC Pocket Data Book (Rev. B) 16 Jan 2007
More literature Digital Bus Switch Selection Guide (Rev. A) 10 Nov 2004
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 08 Jul 2004
Application note Selecting the Right Level Translation Solution (Rev. A) 22 Jun 2004
User guide Signal Switch Data Book (Rev. A) 14 Nov 2003
Application note Bus FET Switch Solutions for Live Insertion Applications 07 Feb 2003

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Schnittstellenadapter

LEADED-ADAPTER1 — Oberflächenmontierbarer DIP-Header-Adapter zur schnellen Prüfung der 5-, 8-, 10-, 16- und 24-poligen

The EVM-LEADED1 board allows for quick testing and bread boarding of TI's common leaded packages.  The board has footprints to convert TI's D, DBQ, DCT,DCU, DDF, DGS, DGV, and PW surface mount packages to 100mil DIP headers.     

Benutzerhandbuch: PDF
Simulationsmodell

HSPICE Model for SN74CB3T3384

SCDJ040.ZIP (100 KB) - HSpice Model
Gehäuse Pins CAD-Symbole, Footprints und 3D-Modelle
SOIC (DW) 24 Ultra Librarian
SSOP (DBQ) 24 Ultra Librarian
TSSOP (PW) 24 Ultra Librarian

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