Produktdetails

Protocols Analog Audio Configuration 2:1 SPDT Number of channels 2 Bandwidth (MHz) 32 Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 2.75 Ron (typ) (mΩ) 700 Input/output voltage (min) (V) -3.25 Input/output voltage (max) (V) 5.5 Supply current (typ) (µA) 6 ESD HBM (typ) (kV) 2.5 Operating temperature range (°C) -40 to 85 Crosstalk (dB) -70 ESD CDM (kV) 1 Input/output continuous current (max) (mA) 150 COFF (typ) (pF) 48 CON (typ) (pF) 176 Off isolation (typ) (dB) -70 OFF-state leakage current (max) (µA) 0.375 Ron (max) (mΩ) 2000 Ron channel match (max) (Ω) 1 RON flatness (typ) (Ω) 0.0135 Turnoff time (disable) (max) (ns) 206 Turnon time (enable) (max) (ns) 470 VIH (min) (V) 1.05 VIL (max) (V) 0.65
Protocols Analog Audio Configuration 2:1 SPDT Number of channels 2 Bandwidth (MHz) 32 Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 2.75 Ron (typ) (mΩ) 700 Input/output voltage (min) (V) -3.25 Input/output voltage (max) (V) 5.5 Supply current (typ) (µA) 6 ESD HBM (typ) (kV) 2.5 Operating temperature range (°C) -40 to 85 Crosstalk (dB) -70 ESD CDM (kV) 1 Input/output continuous current (max) (mA) 150 COFF (typ) (pF) 48 CON (typ) (pF) 176 Off isolation (typ) (dB) -70 OFF-state leakage current (max) (µA) 0.375 Ron (max) (mΩ) 2000 Ron channel match (max) (Ω) 1 RON flatness (typ) (Ω) 0.0135 Turnoff time (disable) (max) (ns) 206 Turnon time (enable) (max) (ns) 470 VIH (min) (V) 1.05 VIL (max) (V) 0.65
DSBGA (YFC) 12 1.8369 mm² 1.57 x 1.17
  • Negative Signaling Capability: Maximum Swing From –2.75 V to 2.75 V (V+ = 2.75 V)
  • Low ON-State Resistance (0.7 Ω Typ)
  • Excellent ON-State Resistance Matching
  • 1.8-V Compatible Control Input Threshold Independent of V+
  • Control Inputs Are 5.5-V Tolerant
  • 2.25-V to 5.5-V Power Supply (V+)
  • Low Charge Injection
  • Specified Break-Before-Make Switching
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2500-V Human-Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
    • 200-V Machine Model (A115-A)
  • Negative Signaling Capability: Maximum Swing From –2.75 V to 2.75 V (V+ = 2.75 V)
  • Low ON-State Resistance (0.7 Ω Typ)
  • Excellent ON-State Resistance Matching
  • 1.8-V Compatible Control Input Threshold Independent of V+
  • Control Inputs Are 5.5-V Tolerant
  • 2.25-V to 5.5-V Power Supply (V+)
  • Low Charge Injection
  • Specified Break-Before-Make Switching
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2500-V Human-Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
    • 200-V Machine Model (A115-A)

The TS5A22366 is a dual single-pole double-throw (SPDT) analog switch that is designed to operate from 2.25 V to 5.5 V. The device features negative signal capability that allows signals below ground to pass through the switch without distortion.

The break-before-make feature prevents signal distortion during the transferring of a signal from one path to another. Low ON-state resistance, excellent channel-to-channel ON-state resistance matching, and minimal total harmonic distortion (THD) performance are ideal for audio applications.

The TS5A22366 is available is a ultra small 1.6 mm × 1.2 mm wafer-chip-scale package (WCSP) (0.4 mm pitch).

The TS5A22366 is a dual single-pole double-throw (SPDT) analog switch that is designed to operate from 2.25 V to 5.5 V. The device features negative signal capability that allows signals below ground to pass through the switch without distortion.

The break-before-make feature prevents signal distortion during the transferring of a signal from one path to another. Low ON-state resistance, excellent channel-to-channel ON-state resistance matching, and minimal total harmonic distortion (THD) performance are ideal for audio applications.

The TS5A22366 is available is a ultra small 1.6 mm × 1.2 mm wafer-chip-scale package (WCSP) (0.4 mm pitch).

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Technische Dokumentation

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Alle anzeigen 6
Typ Titel Datum
* Data sheet 0.8-Ohm Dual SPDT Analog Switch With Negative Rail Capability and 1.8-V Compatib datasheet (Rev. B) 03 Jun 2013
Application brief 1.8-V Logic for Multiplexers and Signal Switches (Rev. C) PDF | HTML 26 Jul 2022
Application note Selecting the Correct Texas Instruments Signal Switch (Rev. E) PDF | HTML 02 Jun 2022
Application note Multiplexers and Signal Switches Glossary (Rev. B) PDF | HTML 01 Dez 2021
Application note Preventing Excess Power Consumption on Analog Switches 03 Jul 2008
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 08 Jul 2004

Design und Entwicklung

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Simulationsmodell

HSPICE Model for TS5A22366

SCDM125.ZIP (106 KB) - HSpice Model
Simulationsmodell

TS5A22366 IBIS Model

SCDM124.ZIP (67 KB) - IBIS Model
Gehäuse Pins CAD-Symbole, Footprints und 3D-Modelle
DSBGA (YFC) 12 Ultra Librarian

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