Produktdetails

Configuration 2:1 SPDT Number of channels 2 Power supply voltage - single (V) 1.8, 2.5, 3.3, 5 Protocols Analog Ron (typ) (Ω) 0.5 CON (typ) (pF) 55 ON-state leakage current (max) (µA) 0.15 Supply current (typ) (µA) 0.001 Bandwidth (MHz) 100 Operating temperature range (°C) -40 to 85 Features Make-before-break, Powered-off protection Input/output continuous current (max) (mA) 200 Rating Catalog Drain supply voltage (max) (V) 5.5 Supply voltage (max) (V) 5.5
Configuration 2:1 SPDT Number of channels 2 Power supply voltage - single (V) 1.8, 2.5, 3.3, 5 Protocols Analog Ron (typ) (Ω) 0.5 CON (typ) (pF) 55 ON-state leakage current (max) (µA) 0.15 Supply current (typ) (µA) 0.001 Bandwidth (MHz) 100 Operating temperature range (°C) -40 to 85 Features Make-before-break, Powered-off protection Input/output continuous current (max) (mA) 200 Rating Catalog Drain supply voltage (max) (V) 5.5 Supply voltage (max) (V) 5.5
VSSOP (DGS) 10 14.7 mm² 3 x 4.9
  • Specified Make-Before-Break Switching
  • Low ON-State Resistance (1 )
  • Control Inputs Are 5.5-V Tolerant
  • Low Charge Injection
  • Excellent ON-State Resistance Matching
  • Low Total Harmonic Distortion (THD)
  • 1.65-V to 5.5-V Single-Supply Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • APPLICATIONS
    • Cell Phones
    • PDAs
    • Portable Instrumentation
    • Audio and Video Signal Routing
    • Low-Voltage Data Acquisition Systems
    • Communication Circuits
    • Modems
    • Hard Drives
    • Computer Peripherals
    • Wireless Terminals and Peripherals

  • Specified Make-Before-Break Switching
  • Low ON-State Resistance (1 )
  • Control Inputs Are 5.5-V Tolerant
  • Low Charge Injection
  • Excellent ON-State Resistance Matching
  • Low Total Harmonic Distortion (THD)
  • 1.65-V to 5.5-V Single-Supply Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • APPLICATIONS
    • Cell Phones
    • PDAs
    • Portable Instrumentation
    • Audio and Video Signal Routing
    • Low-Voltage Data Acquisition Systems
    • Communication Circuits
    • Modems
    • Hard Drives
    • Computer Peripherals
    • Wireless Terminals and Peripherals

The TS5A23160 is a dual single-pole double-throw (SPDT) analog switch that is designed to operate from 1.65 V to 5.5 V. The device offers a low ON-state resistance and an excellent channel-to-channel ON-state resistance matching. The device has excellent total harmonic distortion (THD) performance and consumes very low power. These features make this device suitable for portable audio applications.

The TS5A23160 is a dual single-pole double-throw (SPDT) analog switch that is designed to operate from 1.65 V to 5.5 V. The device offers a low ON-state resistance and an excellent channel-to-channel ON-state resistance matching. The device has excellent total harmonic distortion (THD) performance and consumes very low power. These features make this device suitable for portable audio applications.

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Typ Titel Datum
* Data sheet TS5A23160 datasheet (Rev. A) 14 Feb 2006
Application note Selecting the Correct Texas Instruments Signal Switch (Rev. E) PDF | HTML 02 Jun 2022
Application note Multiplexers and Signal Switches Glossary (Rev. B) PDF | HTML 01 Dez 2021
Application brief Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C) PDF | HTML 06 Jan 2021
Application note Preventing Excess Power Consumption on Analog Switches 03 Jul 2008
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 08 Jul 2004

Design und Entwicklung

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