Detalles del producto

Configuration 1:1 SPST Number of channels 4 Power supply voltage - single (V) 2.5, 3.3 Protocols Analog, I2C, I2S, JTAG, RGMII, SPI, TDM, UART Ron (typ) (Ω) 4 CON (typ) (pF) 8 ON-state leakage current (max) (µA) 1 Supply current (typ) (µA) 2000 Bandwidth (MHz) 500 Operating temperature range (°C) -40 to 85 Features Powered-off protection, Supports input voltage beyond supply Input/output continuous current (max) (mA) 64 Rating Catalog Drain supply voltage (max) (V) 3.6 Supply voltage (max) (V) 3.6
Configuration 1:1 SPST Number of channels 4 Power supply voltage - single (V) 2.5, 3.3 Protocols Analog, I2C, I2S, JTAG, RGMII, SPI, TDM, UART Ron (typ) (Ω) 4 CON (typ) (pF) 8 ON-state leakage current (max) (µA) 1 Supply current (typ) (µA) 2000 Bandwidth (MHz) 500 Operating temperature range (°C) -40 to 85 Features Powered-off protection, Supports input voltage beyond supply Input/output continuous current (max) (mA) 64 Rating Catalog Drain supply voltage (max) (V) 3.6 Supply voltage (max) (V) 3.6
SSOP (DBQ) 16 29.4 mm² 4.9 x 6 TSSOP (PW) 14 32 mm² 5 x 6.4 TVSOP (DGV) 14 23.04 mm² 3.6 x 6.4 VQFN (RGY) 14 12.25 mm² 3.5 x 3.5
  • High-Bandwidth Data Path (up to 500 MHz(1))
  • 5-V Tolerant I/Os With Device Powered Up
    or Powered Down
  • Low and Flat ON-State Resistance (ron)
    Characteristics Over Operating Range
    (ron = 3 Ω Typ)
  • Rail-to-Rail Switching on Data I/O Ports
    • 0-V to 5-V Switching With 3.3-V VCC
    • 0-V to 3.3-V Switching With 2.5-V VCC
  • Bidirectional Data Flow With Near-Zero
    Propagation Delay
  • Low Input and Output Capacitance Minimizes
    Loading and Signal Distortion
    (Cio(OFF) = 4 pF Typ)
  • Fast Switching Frequency (fOE = 20 MHz Max)
  • Data and Control Inputs Provide Undershoot
    Clamp Diodes
  • Low Power Consumption
    (ICC = 0.3 mA Typ)
  • VCC Operating Range From 2.3 V to 3.6 V
  • Data I/Os Support 0-V to 5-V Signaling Levels
    (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
  • Control Inputs Can Be Driven by TTL,
    5-V, or 3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per
    JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications:
    USB Interface, Differential Signal Interface, Bus
    Isolation, Low-Distortion Signal Gating
  • High-Bandwidth Data Path (up to 500 MHz(1))
  • 5-V Tolerant I/Os With Device Powered Up
    or Powered Down
  • Low and Flat ON-State Resistance (ron)
    Characteristics Over Operating Range
    (ron = 3 Ω Typ)
  • Rail-to-Rail Switching on Data I/O Ports
    • 0-V to 5-V Switching With 3.3-V VCC
    • 0-V to 3.3-V Switching With 2.5-V VCC
  • Bidirectional Data Flow With Near-Zero
    Propagation Delay
  • Low Input and Output Capacitance Minimizes
    Loading and Signal Distortion
    (Cio(OFF) = 4 pF Typ)
  • Fast Switching Frequency (fOE = 20 MHz Max)
  • Data and Control Inputs Provide Undershoot
    Clamp Diodes
  • Low Power Consumption
    (ICC = 0.3 mA Typ)
  • VCC Operating Range From 2.3 V to 3.6 V
  • Data I/Os Support 0-V to 5-V Signaling Levels
    (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
  • Control Inputs Can Be Driven by TTL,
    5-V, or 3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per
    JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications:
    USB Interface, Differential Signal Interface, Bus
    Isolation, Low-Distortion Signal Gating

The SN74CB3Q3125 device is a high-bandwidth FET bus switch that uses a charge pump to elevate the gate voltage of the pass transistor, thus providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The SN74CB3Q3125 device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus.

The SN74CB3Q3125 device is a high-bandwidth FET bus switch that uses a charge pump to elevate the gate voltage of the pass transistor, thus providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The SN74CB3Q3125 device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus.

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Documentación técnica

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Tipo Título Fecha
* Data sheet SN74CB3Q3125 Quadruple FET Bus Switch 2.5-V/3.3-V Low-Voltage, High-Bandwidth Bus Switch datasheet (Rev. C) PDF | HTML 29 jun 2015
Application note Selecting the Correct Texas Instruments Signal Switch (Rev. E) PDF | HTML 02 jun 2022
Application note Multiplexers and Signal Switches Glossary (Rev. B) PDF | HTML 01 dic 2021
Application note CBT-C, CB3T, and CB3Q Signal-Switch Families (Rev. C) PDF | HTML 19 nov 2021
Application brief Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C) PDF | HTML 06 ene 2021
Selection guide Logic Guide (Rev. AB) 12 jun 2017
Technical article Logic gates and switches with Ioff or powered-off protection: empowering you to po PDF | HTML 02 nov 2016
Application note Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 02 dic 2015
User guide LOGIC Pocket Data Book (Rev. B) 16 ene 2007
More literature Digital Bus Switch Selection Guide (Rev. A) 10 nov 2004
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 08 jul 2004
User guide Signal Switch Data Book (Rev. A) 14 nov 2003
Application note Bus FET Switch Solutions for Live Insertion Applications 07 feb 2003

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Adaptador de interfaz

LEADED-ADAPTER1 — Adaptador de montaje superficial a conector macho DIP para pruebas rápidas de encapsulados con plomo

The EVM-LEADED1 board allows for quick testing and bread boarding of TI's common leaded packages.  The board has footprints to convert TI's D, DBQ, DCT,DCU, DDF, DGS, DGV, and PW surface mount packages to 100mil DIP headers.     

Guía del usuario: PDF
Modelo de simulación

HSPICE MODEL OF SN74CB3Q3125

SCEJ199.ZIP (93 KB) - HSpice Model
Modelo de simulación

SN74CB3Q3125 IBIS Model (Rev. A)

SCDM067A.ZIP (25 KB) - IBIS Model
Diseños de referencia

TIDA-00180 — Fuente de alimentación con tensión de salida programable y protección de interfaces del codificador

This reference design implements a universal power supply with programmable output voltage and innovative smart eFuse technology for use in a multi-standard position encoder interface module on an industrial drive. The eFuse provides inrush-current and over-current protection as well as user (...)
Design guide: PDF
Esquema: PDF
Encapsulado Pines Símbolos CAD, huellas y modelos 3D
SSOP (DBQ) 16 Ultra Librarian
TSSOP (PW) 14 Ultra Librarian
TVSOP (DGV) 14 Ultra Librarian
VQFN (RGY) 14 Ultra Librarian

Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

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Soporte y capacitación

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