Hz at f = 1 kHz
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The TLC27M2 and TLC27M7 dual operational amplifiers combine a wide range of input offset voltage grades with low offset voltage drift, high input impedance, low noise, and speeds approaching that of general-purpose bipolar devices.These devices use Texas Instruments silicon-gate LinCMOS technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.
The extremely high input impedance, low bias currents, and high slew rates make these cost-effective devices ideal for applications which have previously been reserved for general-purpose bipolar products, but with only a fraction of the power consumption. Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC27M2 (10 mV) to the high-precision TLC27M7 (500 µV). These advantages, in combination with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs.
In general, many features associated with bipolar technology are available on LinCMOS operational amplifiers, without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are easily designed with the TLC27M2 and TLC27M7. The devices also exhibit low voltage single-supply operation, making them ideally suited for remote and inaccessible battery-powered applications. The common-mode input voltage range includes the negative rail.
A wide range of packaging options is available, including small-outline and chip-carrier versions for high-density system applications.
The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up.
The TLC27M2 and TLC27M7 incorporate internal ESD-protection circuits that prevent functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to 125°C.
| Tipo | Título | Fecha | ||
|---|---|---|---|---|
| * | Data sheet | LinCMOS Precision Dual Operational Amplifiers datasheet (Rev. E) | 24 ago 2008 | |
| E-book | The Signal e-book: A compendium of blog posts on op amp design topics | 28 mar 2017 |
Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.
El kit de desarrollo del rendimiento (PDK) del amplificador es un kit de módulo de evaluación (EVM) para probar los parámetros comunes del amplificador operacional y es compatible con la mayoría de los amplificadores operacionales y comparadores. El kit del EVM ofrece una placa principal con varias (...)
Speed up your op amp prototyping and testing with the DIP-Adapter-EVM, which provides a fast, easy and inexpensive way to interface with small, surface-mount ICs. You can connect any supported op amp using the included Samtec terminal strips or wire them directly to existing circuits.
The (...)
| Encapsulado | Pines | Símbolos CAD, huellas y modelos 3D |
|---|---|---|
| PDIP (P) | 8 | Ultra Librarian |
| SOIC (D) | 8 | Ultra Librarian |
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