JFE2140
- Ultra-low noise:
- Voltage noise:
- 0.9 nV/√ Hz at 1 kHz, I DS = 5 mA
- 1.1 nV/√ Hz at 1 kHz, I DS = 2 mA
- Current noise: 1.6 fA/√ Hz at 1 kHz
- Voltage noise:
- Low V GS mismatch: 4 mV (max)
- Low gate current: 10 pA (max)
-
Low input capacitance: 13 pF at V DS = 5 V
-
High gate-to-drain and gate-to-source breakdown voltage: –40 V
-
High transconductance: 30 mS
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Packages: SOIC, 2-mm × 2-mm WSON
The JFE2140 is a Burr-Brown™ Audio, matched-pair discrete JFET built using Texas Instruments’ modern, high-performance, analog bipolar process. The JFE2140 features performance not previously available in older discrete JFET technologies. The JFE2140 offers excellent noise performance across all current ranges, where the quiescent current can be set by the user from 50 µA to 20 mA. When biased at 5 mA, the device yields 0.9 nV/√ Hz of input-referred noise, giving ultra-low noise performance with extremely high input impedance (> 1 TΩ). In addition, the matching between JFETs is tested to ±4 mV, providing low offset and high CMRR performance for differential pair configurations. The JFE2140 also features integrated diodes connected to separate clamp nodes to provide protection without the addition of high leakage, nonlinear external diodes.
The JFE2140 can withstand a high drain-to-source voltage of 40‑V, as well as gate-to-source and gate-to-drain voltages down to –40 V. The temperature range is specified from –40°C to +125°C.
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JFE2140EVM — 適用於超低雜訊、低閘極電流、音訊、N 通道 JFET 的 JFE2140 評估模組
JFE2140 評估模組 (EVM) 提供對 JFE2140 的基本功能評估。EVM 位於閉合迴路前置放大器配置中,並於分離 ±5-V 電源供電上提供 60 dB 增益。可以對各種電路配置進行用戶修改。
封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
---|---|---|
SOIC (D) | 8 | Ultra Librarian |
WSON (DSG) | 8 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。