封裝資訊
封裝 | 針腳 TSSOP (PW) | 16 |
操作溫度範圍 (°C) -40 to 85 |
包裝數量 | 運送業者 90 | TUBE |
SN74CB3Q3257 的特色
- High-Bandwidth Data Path
(up to 500 MHz) - 5-V Tolerant I/Os With Device Powered Up or Powered Down
- Low and Flat ON-State Resistance (ron) Characteristics Over
Operating Range
(ron= 4 Ω Typical) - Rail-to-Rail Switching on Data I/O Ports
- 0- to 5-V Switching With 3.3-V VCC
- 0- to 3.3-V Switching With 2.5-V VCC
- Bidirectional Data Flow With Near-Zero Propagation Delay
- Low Input and Output Capacitance Minimizes Loading and Signal Distortion
(Cio(OFF) = 3.5 pF Typical) - Fast Switching Frequency (f OE = 20 MHz Maximum)
- Data and Control Inputs Provide Undershoot Clamp Diodes
- Low Power Consumption
(ICC = 0.7 mA Typical) - VCC Operating Range From 2.3 V to 3.6 V
- Data I/Os Support 0- to 5-V Signaling Levels
(0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V) - Control Inputs Can Be Driven by TTL or
5-V/3.3-V CMOS Outputs - Ioff Supports Partial-Power-Down Mode Operation
- Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
- ESD Performance Tested Per JESD 22
- 2000-V Human Body Model
(A114-B, Class II) - 1000-V Charged-Device Model (C101)
- 2000-V Human Body Model
- Supports Both Digital and Analog Applications: USB Interface,
Differential Signal Interface,
Bus Isolation, Low-Distortion Signal Gating (1)
(1)For additional information regarding the
performance
characteristics of the CB3Q family, refer to the TI application report,
CBT-C, CB3T, and CB3Q Signal-Switch Families,
SCDA008.
SN74CB3Q3257 的說明
The SN74CB3Q3257 device is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron).