產品詳細資料

Technology family LV1T Applications GPIO, SPI Bits (#) 6 Configuration 6 Ch A to B 0 Ch B to A High input voltage (min) (V) 1 High input voltage (max) (V) 5.5 Vout (min) (V) 1.65 Vout (max) (V) 5.5 Data rate (max) (Mbps) 100 IOH (max) (mA) -8 IOL (max) (mA) 8 Features Balanced outputs, Single supply Input type Schmitt-Trigger, TTL-Compatible CMOS Output type Balanced CMOS, Push-Pull Rating Automotive Operating temperature range (°C) -40 to 85
Technology family LV1T Applications GPIO, SPI Bits (#) 6 Configuration 6 Ch A to B 0 Ch B to A High input voltage (min) (V) 1 High input voltage (max) (V) 5.5 Vout (min) (V) 1.65 Vout (max) (V) 5.5 Data rate (max) (Mbps) 100 IOH (max) (mA) -8 IOL (max) (mA) 8 Features Balanced outputs, Single supply Input type Schmitt-Trigger, TTL-Compatible CMOS Output type Balanced CMOS, Push-Pull Rating Automotive Operating temperature range (°C) -40 to 85
TSSOP (PW) 14 32 mm² 5 x 6.4 WQFN (BQA) 14 7.5 mm² 3 x 2.5
  • AEC-Q100 qualified for automotive applications:

    • Device temperature grade 1: -40°C to +125°C

    • Device HBM ESD classification level 2

    • Device CDM ESD classifcation level C4B

  • Available in wettable flank QFN (WBQA) package

  • Wide operating range of 1.8 V to 5.5 V

  • Single-supply voltage translator (refer to LVxT Enhanced Input Voltage):

    • Up translation:

      • 1.2 V to 1.8 V

      • 1.5 V to 2.5 V

      • 1.8 V to 3.3 V

      • 3.3 V to 5.0 V

    • Down translation:

      • 5.0 V, 3.3 V, 2.5 V to 1.8 V
      • 5.0 V, 3.3 V to 2.5 V
      • 5.0 V to 3.3 V
  • 5.5-V tolerant input pins
  • Supports standard pinouts
  • Up to 150 Mbps with 5-V or 3.3-V V CC
  • Latch-up performance exceeds 250 mA per JESD 17
  • AEC-Q100 qualified for automotive applications:

    • Device temperature grade 1: -40°C to +125°C

    • Device HBM ESD classification level 2

    • Device CDM ESD classifcation level C4B

  • Available in wettable flank QFN (WBQA) package

  • Wide operating range of 1.8 V to 5.5 V

  • Single-supply voltage translator (refer to LVxT Enhanced Input Voltage):

    • Up translation:

      • 1.2 V to 1.8 V

      • 1.5 V to 2.5 V

      • 1.8 V to 3.3 V

      • 3.3 V to 5.0 V

    • Down translation:

      • 5.0 V, 3.3 V, 2.5 V to 1.8 V
      • 5.0 V, 3.3 V to 2.5 V
      • 5.0 V to 3.3 V
  • 5.5-V tolerant input pins
  • Supports standard pinouts
  • Up to 150 Mbps with 5-V or 3.3-V V CC
  • Latch-up performance exceeds 250 mA per JESD 17

The SN74LV6T17-Q1 device contains six independent Buffers with Schmitt-trigger inputs. Each gate performs the Boolean function Y = A in positive logic. The output level is referenced to the supply voltage (V CC) and supports 1.8-V, 2.5-V, 3.3-V, and 5-V CMOS levels.

The input is designed with a lower threshold circuit to support up translation for lower voltage CMOS inputs (for example, 1.2 V input to 1.8 V output or 1.8 V input to 3.3 V output). In addition, the 5-V tolerant input pins enable down translation (for example, 3.3 V to 2.5 V output).

The SN74LV6T17-Q1 device contains six independent Buffers with Schmitt-trigger inputs. Each gate performs the Boolean function Y = A in positive logic. The output level is referenced to the supply voltage (V CC) and supports 1.8-V, 2.5-V, 3.3-V, and 5-V CMOS levels.

The input is designed with a lower threshold circuit to support up translation for lower voltage CMOS inputs (for example, 1.2 V input to 1.8 V output or 1.8 V input to 3.3 V output). In addition, the 5-V tolerant input pins enable down translation (for example, 3.3 V to 2.5 V output).

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類型 標題 日期
* Data sheet SN74LV6T17-Q1 Automotive Hex Schmitt-Trigger Buffers with Integrated Translation datasheet PDF | HTML 2023年 6月 30日
Application note Schematic Checklist - A Guide to Designing With Fixed or Direction Control Translators PDF | HTML 2024年 10月 2日
Application note Schematic Checklist - A Guide to Designing with Auto-Bidirectional Translators PDF | HTML 2024年 7月 12日
Application note Understanding Transient Drive Strength vs. DC Drive Strength in Level-Shifters (Rev. A) PDF | HTML 2024年 7月 3日

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