SLVAF66 June   2021 DRV3255-Q1 , DRV8300 , DRV8301 , DRV8302 , DRV8303 , DRV8304 , DRV8305 , DRV8305-Q1 , DRV8306 , DRV8307 , DRV8308 , DRV8320 , DRV8320R , DRV8323 , DRV8323R , DRV8340-Q1 , DRV8343-Q1 , DRV8350 , DRV8350F , DRV8350R , DRV8353 , DRV8353F , DRV8353R

 

  1. 1 Introduction to High-Power Motor Applications
    1. 1.1 Effects of a Poorly-Designed High-Power Motor Driver System
    2. 1.2 Example of the High-Power Design Process
  2. 2 Examining a High-Power Motor Drive System at a High Level
    1. 2.1 Anatomy of the Motor Drive Power Stage and How to Troubleshoot
    2. 2.2 Troubleshooting a High-Power System
  3. 3 High-Power Design Through MOSFETs and MOSFET Gate Current (IDRIVE)
    1. 3.1 MOSFET Gate Current
      1. 3.1.1 How Gate Current Causes Damage
      2. 3.1.2 Gate Resistors and Smart Gate Drive Technology
        1. 3.1.2.1 Gate Resistors
        2. 3.1.2.2 Smart Gate Drive and Internally-Controlled Sink and Source Gate Currents
        3. 3.1.2.3 Summary for Gate Resistors and Smart Gate Drive Technology
      3. 3.1.3 Example Gate Current Calculation for a Given FET
  4. 4 High-Power Design Through External Components
    1. 4.1 Bulk and Decoupling Capacitors
      1. 4.1.1 Note on Capacitor Voltage Ratings
    2. 4.2 RC Snubber Circuits
    3. 4.3 High-Side Drain to Low-Side Source Capacitor
    4. 4.4 Gate-to-GND Diodes
  5. 5 High-Power Design Through a Parallel MOSFET Power Stage
  6. 6 High-Power Design Through Protection
    1. 6.1 VDS and VGS Monitoring
      1. 6.1.1 Turning Off the FETs During an Overcurrent, Shoot-Through, or FET Shorting Event
    2. 6.2 Passive Gate-to-Source Pulldown Resistors
    3. 6.3 Power Supply Reverse Polarity or Power Supply Cutoff Protection
  7. 7 High-Power Design Through Motor Control Methods
    1. 7.1 Brake versus Coast
      1. 7.1.1 Algorithm-Based Solutions
      2. 7.1.2 External Circuit Solutions
      3. 7.1.3 Summary of Brake versus Coast
  8. 8 High-Power Design Through Layout
    1. 8.1 What is a Kelvin Connection?
    2. 8.2 General Layout Advice
  9. 9 Conclusion
  10. 10Acknowledgments

4.4 Gate-to-GND Diodes

Figure 4-5 Example Gate-to-GND Diode

Simply put, diodes clamp a node to a voltage so no absolute maximum ratings are violated for the device. Current rating, clamping voltage, and timing information that are in accordance with the absolute maximum ratings of the gate driver and MOSFET are important for choosing an effective diode. A popular location is to connect the cathode to the GLx node, near the FET, and the anode to GND to help with negative transient spikes as shown in Figure 4-5.

These are not the primary recommended mitigation techniques that are meant to replace the other methods because diodes simply reroute energy as opposed to suppress energy by filtering or decoupling. Diodes often introduce more losses and power dissipated compared to a capacitor since voltage spiking can occur every PWM cycle.

In summary:

  • TVS diodes clamp voltage below absolute value ratings of the device to prevent damage
  • Diodes should be used in conjunction with other mitigation techniques and not be relied upon
  • Diodes dissipate more power compared to current moving in and out of capacitors