Product details

Rating Automotive Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM Gate drive (A) 1 Vs (min) (V) 5.5 Vs ABS (max) (V) 65 Features Hardware Management I/F, Independent FET Control, SPI/I2C, Smart Gate Drive Operating temperature range (°C) -40 to 125
Rating Automotive Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM Gate drive (A) 1 Vs (min) (V) 5.5 Vs ABS (max) (V) 65 Features Hardware Management I/F, Independent FET Control, SPI/I2C, Smart Gate Drive Operating temperature range (°C) -40 to 125
HTQFP (PHP) 48 81 mm² 9 x 9
  • AEC-Q100 qualified for automotive applications
    • Temperature grade 1: –40°C ≤ TA ≤ 125°C
  • Three independent half-bridge gate driver
    • Dedicated source (SHx) and drain (DLx) pins to support independent MOSFET control
    • Drives 3 high-side and 3 low-side N-channel MOSFETs (NMOS)
  • Smart gate drive architecture
    • Adjustable slew rate control
    • 1.5-mA to 1-A peak source current
    • 3-mA to 2-A peak sink current
  • Charge-pump of gate driver for 100% Duty Cycle
  • SPI (S) and hardware (H) interface available
  • 6x, 3x, 1x, and independent PWM modes
  • Supports 3.3-V, and 5-V logic inputs
  • Charge pump output can be used to drive the reverse supply protection MOSFET
  • Linear voltage regulator, 3.3 V, 30 mA
  • Integrated protection features
    • VM undervoltage lockout (UVLO)
    • Charge pump undervoltage (CPUV)
    • Short to battery (SHT_BAT)
    • Short to ground (SHT_GND)
    • MOSFET overcurrent protection (OCP)
    • Gate driver fault (GDF)
    • Thermal warning and shutdown (OTW/OTSD)
    • Fault condition indicator (nFAULT)
  • AEC-Q100 qualified for automotive applications
    • Temperature grade 1: –40°C ≤ TA ≤ 125°C
  • Three independent half-bridge gate driver
    • Dedicated source (SHx) and drain (DLx) pins to support independent MOSFET control
    • Drives 3 high-side and 3 low-side N-channel MOSFETs (NMOS)
  • Smart gate drive architecture
    • Adjustable slew rate control
    • 1.5-mA to 1-A peak source current
    • 3-mA to 2-A peak sink current
  • Charge-pump of gate driver for 100% Duty Cycle
  • SPI (S) and hardware (H) interface available
  • 6x, 3x, 1x, and independent PWM modes
  • Supports 3.3-V, and 5-V logic inputs
  • Charge pump output can be used to drive the reverse supply protection MOSFET
  • Linear voltage regulator, 3.3 V, 30 mA
  • Integrated protection features
    • VM undervoltage lockout (UVLO)
    • Charge pump undervoltage (CPUV)
    • Short to battery (SHT_BAT)
    • Short to ground (SHT_GND)
    • MOSFET overcurrent protection (OCP)
    • Gate driver fault (GDF)
    • Thermal warning and shutdown (OTW/OTSD)
    • Fault condition indicator (nFAULT)

The DRV8340-Q1 device is an integrated gate driver for three-phase applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The dedicated Source and Drain pins enable the independent MOSFET control for solenoid application. The DRV8340-Q1 generates the correct gate drive voltages using an integrated charge pump sufficient for the high-side MOSFETs and a linear regulator for the low-side MOSFETs. The Smart Gate Drive architecture supports peak gate drive currents up to 1-A source and 2-A. The DRV8340-Q1 can operate from a single power supply and supports a wide input supply range of 5.5 to 60 V for the gate driver.

The 6x, 3x, 1x, and independent input PWM modes allow for simple interfacing to controller circuits. The configuration settings for the gate driver and device are highly configurable through the SPI or hardware (H/W) interface.

A low-power sleep mode is provided to achieve low quiescent current. Internal protection functions are provided for undervoltage lockout, charge pump fault, MOSFET overcurrent, MOSFET short circuit, phase-node short to supply and ground, gate driver fault, and overtemperature. Fault conditions are indicated on the nFAULT pin with details through the device registers for the SPI device variant.

The DRV8340-Q1 device is an integrated gate driver for three-phase applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The dedicated Source and Drain pins enable the independent MOSFET control for solenoid application. The DRV8340-Q1 generates the correct gate drive voltages using an integrated charge pump sufficient for the high-side MOSFETs and a linear regulator for the low-side MOSFETs. The Smart Gate Drive architecture supports peak gate drive currents up to 1-A source and 2-A. The DRV8340-Q1 can operate from a single power supply and supports a wide input supply range of 5.5 to 60 V for the gate driver.

The 6x, 3x, 1x, and independent input PWM modes allow for simple interfacing to controller circuits. The configuration settings for the gate driver and device are highly configurable through the SPI or hardware (H/W) interface.

A low-power sleep mode is provided to achieve low quiescent current. Internal protection functions are provided for undervoltage lockout, charge pump fault, MOSFET overcurrent, MOSFET short circuit, phase-node short to supply and ground, gate driver fault, and overtemperature. Fault conditions are indicated on the nFAULT pin with details through the device registers for the SPI device variant.

Download View video with transcript Video

Similar products you might be interested in

open-in-new Compare alternates
Similar functionality to the compared device
DRV8343-Q1 ACTIVE Automotive 12-V to 24-V battery 3-phase smart gate driver with current shunt amplifiers Features 3 current sense amplifiers

Technical documentation

star =Top documentation for this product selected by TI
No results found. Please clear your search and try again.
View all 3
Type Title Date
* Data sheet DRV8340-Q1 12-V / 24-V Automotive Gate Driver Unit (GDU) with Independent Half Bridge Control datasheet PDF | HTML 09 Mar 2017
Application note System Design Considerations for High-Power Motor Driver Applications PDF | HTML 22 Jun 2021
Application note Switched Reluctance Motor (SRM) Inverter Design With the DRV8343-Q1 30 Jan 2020

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

DRV8343H-Q1EVM — DRV8343H-Q1 Automotive Three-Phase Motor Smart Gate Driver Evaluation Module

The DRV8343H-Q1EVM evaluation module is a 6V to 60V, 20A, a highly configurable 3-phase brushless DC (BLDC) motor drive and control evaluation platform designed for 12-V to 24-V automotive systems based on the DRV8343H-Q1 automotive smart gate driver.  The EVM has onboard reverse battery (...)
User guide: PDF
Not available on TI.com
Evaluation board

DRV8343S-Q1EVM — DRV8343S-Q1 Automotive Three-Phase Motor Smart Gate Driver Evaluation Module

The DRV8343S-Q1EVM evaluation module is a 6V to 60V, 20A, a highly configurable 3-phase brushless DC (BLDC) motor drive and control evaluation platform designed for 12-V to 24-V automotive systems based on the DRV8343S-Q1 automotive smart gate driver.  The EVM has onboard reverse battery (...)
User guide: PDF
Not available on TI.com
Simulation model

DRV834XQ1 PSPICE Model

SLVMD44.ZIP (246 KB) - PSpice Model
Calculation tool

BLDC-MAX-QG-MOSFET-CALCULATOR Calculate the maximum QG MOSFET for your motor driver

Calculate the maximum QG MOSFET that can be driven based on the PWM switching frequency, algorithm type, and additional external capacitance.
Supported products & hardware

Supported products & hardware

Products
BLDC drivers
DRV8320 65-V max 3-phase smart gate driver DRV8320R 65-V max 3-phase smart gate driver with buck regulator DRV8323 65-V max 3-phase smart gate driver with current shunt amplifiers DRV8323R 65-V max 3-phase smart gate driver with buck regulator & current shunt amplifiers DRV8329 60V three-phase gate driver with single current-sense amplifier DRV8329-Q1 Automotive 60V three-phase gate driver with single current-sense amplifier DRV8334 60-V 1000-mA to 2000-mA 3-phase gate driver with accurate current sensing DRV8340-Q1 Automotive 12-V to 24-V battery 3-phase smart gate driver DRV8343-Q1 Automotive 12-V to 24-V battery 3-phase smart gate driver with current shunt amplifiers DRV8350 102-V max 3-phase smart gate driver DRV8350F 102-V max 3-phase Functional Safety Quality-Managed smart gate driver DRV8350R 102-V max 3-phase smart gate driver with buck regulator DRV8353 102-V max 3-phase smart gate driver with current shunt amplifiers DRV8353F 102-V max 3-phase Functional Safety Quality-Managed smart gate driver with 3x CSA DRV8353M 102-V max 3-phase smart gate driver with current shunt amplifiers and extended temperature DRV8353R 102-V max 3-phase smart gate driver with buck regulator & current shunt amplifiers
Package Pins CAD symbols, footprints & 3D models
HTQFP (PHP) 48 Ultra Librarian

Ordering & quality

Information included:
  • RoHS
  • REACH
  • Device marking
  • Lead finish/Ball material
  • MSL rating/Peak reflow
  • MTBF/FIT estimates
  • Material content
  • Qualification summary
  • Ongoing reliability monitoring
Information included:
  • Fab location
  • Assembly location

Support & training

TI E2E™ forums with technical support from TI engineers

Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.

If you have questions about quality, packaging or ordering TI products, see TI support. ​​​​​​​​​​​​​​

Videos