SLVA680A February 2015 – April 2022 ESD401 , TPD12S015 , TPD12S015A , TPD12S016 , TPD12S520 , TPD12S521 , TPD13S523 , TPD1E05U06 , TPD1E10B06 , TPD1E10B09 , TPD1S414 , TPD1S514 , TPD2E001 , TPD2E001-Q1 , TPD2E009 , TPD2E1B06 , TPD2E2U06-Q1 , TPD2EUSB30 , TPD2S017 , TPD3S014 , TPD3S044 , TPD4E001-Q1 , TPD4E004 , TPD4E02B04 , TPD4E05U06 , TPD4E05U06-Q1 , TPD4E101 , TPD4E1U06 , TPD4E6B06 , TPD4EUSB30 , TPD4S010 , TPD4S014 , TPD4S1394 , TPD4S214 , TPD5S115 , TPD5S116 , TPD6E004 , TPD6E05U06 , TPD6F002-Q1 , TPD6F003 , TPD6F202 , TPD7S019 , TPD8E003 , TPD8F003
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An ESD event rapidly forces current (see Figure 1-1), IESD , into a system, usually through a user interface such as a cable connection, or a human input device like a key on a keyboard. Protecting a system against ESD using a TVS relies upon the TVS being able to shunt IESD to ground. Optimizing a PCB Layout for ESD suppression is largely dependant on designing the path to ground for IESD with as little impedance as possible. During an ESD event, the voltage presented to the protected integrated circuit (Protected IC), VESD, is a function of IESD and the impedance presented to it. Since the designer has no control over IESD, lowering the impedance to ground is the primary means available for minimizing VESD.
Lowering the impedance presents several challenges. Mainly, it cannot be of zero impedance, or the signal line being protected would be shorted to ground. In order for the circuit to have a realistic application, the protected line needs to be able to maintain some voltage, usually under a high impedance to ground. This is where the TVS becomes applicableLowering the impedance presents several challenges. Mainly, it cannot be of zero impedance, or the signal line being protected would be shorted to ground. In order for the circuit to have a realistic application, the protected line needs to be able to maintain some voltage, usually under a high impedance to ground. This is where the TVS becomes applicableA TVS is an array of diodes (see Figure 1-2 for a typical example) arranged to present a very high impedance to the voltages normally present in the circuit, but if voltages exceed the design, the TVS diodes will breakdown and shunt IESD to ground before it can damage the system being protected. The system designer is then challenged to lower the impedance for IESD from the ESD Source through the TVS to ground.
The impedance presented to IESD is a function of any impedance inherent with the TVS (in the diode array and the package of the TVS) and the PCB Layout between the ESD Source and the TVS ground. A TVS is generally designed to offer as low of an impedance to ground for IESD as its overall design constraints will allow. With the proper TVS selected, a critical phase of the design is to lower the impedance in the PCB Layout between the ESD Source and the TVS ground.
Another concern created by the rapidly changing IESD is its associated rapidly changing electromagnetic field (EM) causing interference (EMI) to couple onto other circuits of the PCB. This is especially true in the area between the ESD Source and the TVS. Once the TVS shunts IESD to ground, the trace between the TVS and the Protected IC should be relatively free of EMI. Therefore, unprotected circuits should not be adjacent to an ESD protected circuit's traces between the ESD Source and the TVS. In order to keep EMI emissions at a minimum, circuit traces between the ESD Source and the TVS should have corners which do not exceed 45° or, ideally, which are curved with large radii.
In today's PCB Layout, board space is at a premium. ICs, including TVSs, are designed to be very compact. Also, the density of their placement on the PCB is continually increasing. Multiple layer PCB boards and routing lean heavily upon VIAs for maximizing the density to increase the system's feature set while decreasing the system's size. This PCB architecture, particularly related to layer switching and VIAs, plays an important role in shunting IESD to ground through the TVS. Large differences in VESD at the Protected IC can be induced by the manner in which the circuit is routed to the TVS using VIAs. Generally, placing a VIA between the ESD Source and the TVS is detrimental, but in some circumstances the designer is forced to do so. Even in these circumstance, if properly done, VESD can still be minimized at the Protected IC.
Grounding schemes are critical in protecting against ESD. Having a chassis ground for the TVS that is separated from the digital and/or analog ground by inductance provides very good protection against ESD related failures. Yet it presents great challenges when routing high speed circuits across multiple ground planes. For this reason, many designs use one common ground for the protected circuits. Ground planes are necessary for the TVS to have success in dissipating IESD without increasing VESD. Electrical connections to an earth grounded chassis, like a PCB grounded through-hole for a chassis screw, immediately adjacent to the TVS ground and the ESD Source's ground (for example, a connector shield) provide a sound methodology in keeping ground shifts at Protected ICs to a minimum. If a system cannot utilize a chassis earth ground, tightly coupled multiple layer ground planes can help keep ground shifts at Protected ICs to a minimum.
To summarize these parameters, successfully protecting a system against ESD includes:
Outside of controlled RLC values, PCBs have inherent parasitics which contribute to overall board performance. Usually these parasitics are detrimental to the functionality of the design. An important parasitic to consider when designing a circuit to dissipate ESD is inductance. Because (see Note 1, below) VESD = Vbr_TVS + RDYN(TVS)IESD + L(dIESD/dt), and the term dIESD/dt is very large, the forced current in an ESD event will cause large voltages to drop across any inductance. For example, in an 8 kV ESD event as specified by IEC 61000-4-2, the dIESD/dt = (30 A)/(0.8×10-9 s) = 4 × 1010 A/s. So even with 0.25 nH of inductance an additional 10 V is presented to the system.
In Figure 2-1 four parasitic inductors are shown: L1 and L2 is the inductance in the circuit between the ESD Source (typically a connector) and the TVS, L3 is the inductance between the TVS and ground, and L4 is the inductance between the TVS and the Protected IC. Not considering VIAs, the inductors L1 and L4 are generally dependant upon design constraints such as impedance controlled signal lines. However, IESD can still be "steered" towards the TVS by making L4 much larger than L1. This is accomplished by placing the TVS as near to the ESD Source as the PCB design rules allow while placing the Protected IC far away from the TVS, for example near the middle of the PCB. This effectively creates L4 >> L1, helping shunt the IESD to the TVS. Placing the TVS adjacent to the connector also mitigates EMI from radiating into the system. The inductor shown at L2 should not be present in a well designed system. This represents a stub between the TVS and the line being protected. This design practice should be avoided. The Protected Line should run directly from the ESD Source to the protection Pin of the TVS, ideally with no VIAs in the path. The inductor at L3 represents the inductance between the TVS and ground. This value should be reduced as much as possible, and perhaps represents the most predominant parasitic influencing VESD. The voltage presented to the node "Protected Line" will be VESD = Vbr_TVS + IESDRDYN(TVS) + (L2 + L3)(dIESD/dt). Thus the PCB designer needs to minimize L3 and eliminate L2. Minimizing L3 is covered in Section 2.4. Minimizing L1 is covered in Section 2.2 and Section 2.3.
Fast transients like ESD with high di/dt can cause EMI without proper steps for suppression. For ESD, the primary source of radiation will be in the circuit between the ESD Source and the TVS. For this reason, the PCB designer should consider this region a Keep-Out area for unprotected PCB traces which could damage the system by either having direct contact with an IC, or by carrying the EMI further into the system where it could radiate more EMI. Even with no inductance at L1 (as shown in Figure 2-1) the rapidly changing electric field during ESD can couple onto nearby circuits, resulting in undesired voltages on unintended circuits. Having any induction at L1 amplifies the EMI.
Figure 2-2 shows an unprotected line running adjacent to a protected line between the ESD Source and the TVS. This practice should be avoided. During an ESD event there will be a large dIESD/dt between the ESD Source and the TVS. The traces on this path will radiate EMI and any nearby traces could have a current induced in them by the EMI. If these traces have no TVS protecting them, the induced current in the unprotected line can cause system damage.
If there are any VIAs on the protected line between the ESD Source and the TVS, these same principles apply to any layer the VIA crosses, no unprotected lines should be ran adjacent to the VIA.
Another aspect of PCB Layout to consider is the style of the corners between the ESD Source and the TVS. Corners tend to radiate EMI during IESD. The best method of routing from the ESD Source to the TVS is using straight paths which are as short as possible. Beyond lowering the impedance in the path to ground for IESD, shortening the length of this path also reduces the EMI being radiated inside the system. If corners are necessary, they should be curved with the largest radii possible, with 45° corners being the maximum angle if the PCB technology does not allow curved traces.
In Figure 2-3 note that for a 90° corner, the corner is a strong source of EMI. The electric field at the corner is at least 7 kV. This will lead to an electric arc (ionization) for any radius less than about 2.6 mm (in air). The EMI for the 45° and curve are much less pronounced. To further show the effects of corner styles, Figure 2-4 plots the crosstalk between parallel traces with these three corner types. The 90° corner has much higher coupling than the others, especially in the ESD frequency content region.