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DRV7308

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650V, 205mΩ 3-phase integrated GaN intelligent power module (IPM) with protection and current sense

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Data sheet

DRV7308

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Data sheet Order now

Product details

Rating Catalog Architecture Integrated FET Control interface 6xPWM Peak output current (A) 5 RDS(ON) (HS + LS) (mΩ) 250 VDS (max) (V) 650 Features Integrated FETs Operating temperature range (°C) -40 to 125
Rating Catalog Architecture Integrated FET Control interface 6xPWM Peak output current (A) 5 RDS(ON) (HS + LS) (mΩ) 250 VDS (max) (V) 650 Features Integrated FETs Operating temperature range (°C) -40 to 125
VQFN (REN) 68 144 mm² 12 x 12
  • Three-phase PWM motor driver with integrated 650V enhancement mode GaNFETs
  • Up to 450V operating voltage
    • 650V absolute maximum voltage
  • High output current capability: 5A Peak current
  • Low conduction loss: Low on-state resistance per GaN FET: 205mΩ RDS(ON) at TA = 25°C
  • Low switching loss: Zero reverse recovery, low output capacitance, slew rate control
  • Low distortion: Ultra low propagation delay < 135ns, Ultra low adaptive dead time < 200ns
  • Integrated gate drives with slew rate control of phase node voltage
    • Slew rate options from 5V/ns to 40V/ns
  • 500ns minimum low side on time support with integrated fast bootstrap GaN rectifier
  • Low-side GaN FET open source pins to support 1- or 2- or 3-shunt current sensing
  • Supports up to 60kHz hard switching
  • Integrates a 11MHz, 15V/µs amplifier for single shunt current sensing
  • Supports 3.3V and 5V logic inputs
  • Integrated BRAKE functionality to turn on all low side GaN FETs together
  • Integrated temperature sensor
  • >1.6mm clearance between OUTx and OUTx, VM and OUTx and OUTx and PGND.
  • 2mm clearance between VM and PGND
  • Integrated protection features
    • GVDD and bootstrap under voltage lockout
    • Over current protection for each GaN FET
    • Over temperature protection
    • PWM input dead time
    • Current limit protection using integrated comparators for all three phases
    • Fault condition indication pin (HV_nFAULT)
  • Three-phase PWM motor driver with integrated 650V enhancement mode GaNFETs
  • Up to 450V operating voltage
    • 650V absolute maximum voltage
  • High output current capability: 5A Peak current
  • Low conduction loss: Low on-state resistance per GaN FET: 205mΩ RDS(ON) at TA = 25°C
  • Low switching loss: Zero reverse recovery, low output capacitance, slew rate control
  • Low distortion: Ultra low propagation delay < 135ns, Ultra low adaptive dead time < 200ns
  • Integrated gate drives with slew rate control of phase node voltage
    • Slew rate options from 5V/ns to 40V/ns
  • 500ns minimum low side on time support with integrated fast bootstrap GaN rectifier
  • Low-side GaN FET open source pins to support 1- or 2- or 3-shunt current sensing
  • Supports up to 60kHz hard switching
  • Integrates a 11MHz, 15V/µs amplifier for single shunt current sensing
  • Supports 3.3V and 5V logic inputs
  • Integrated BRAKE functionality to turn on all low side GaN FETs together
  • Integrated temperature sensor
  • >1.6mm clearance between OUTx and OUTx, VM and OUTx and OUTx and PGND.
  • 2mm clearance between VM and PGND
  • Integrated protection features
    • GVDD and bootstrap under voltage lockout
    • Over current protection for each GaN FET
    • Over temperature protection
    • PWM input dead time
    • Current limit protection using integrated comparators for all three phases
    • Fault condition indication pin (HV_nFAULT)

The DRV7308 is a three-phase intelligent power module (IPM) that consists of 205mΩ, 650V e-mode Gallium-Nitride (GaN) for driving three-phase BLDC/PMSM motors up to 450V DC rails. The applications include field-oriented control (FOC), sinusoidal current control, and trapezoidal (six step) current control of BLDC motors. The device helps to achieve more than 99% efficiency for a 3-phase modulated, FOC-driven, 250W motor drive application in a QFN 12mm x 12mm package at 20kHz switching frequency, eliminating the need for heat sink. The device helps to achieve ultra quiet operation, with very low dead time. The integrated bootstrap rectifier with bootstrap current limit, eliminates the need for an external bootstrap diode.

The DRV7308 is a three-phase intelligent power module (IPM) that consists of 205mΩ, 650V e-mode Gallium-Nitride (GaN) for driving three-phase BLDC/PMSM motors up to 450V DC rails. The applications include field-oriented control (FOC), sinusoidal current control, and trapezoidal (six step) current control of BLDC motors. The device helps to achieve more than 99% efficiency for a 3-phase modulated, FOC-driven, 250W motor drive application in a QFN 12mm x 12mm package at 20kHz switching frequency, eliminating the need for heat sink. The device helps to achieve ultra quiet operation, with very low dead time. The integrated bootstrap rectifier with bootstrap current limit, eliminates the need for an external bootstrap diode.
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Technical documentation

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* Data sheet DRV7308 Three Phase 650V, 5A, GaN Intelligent Power Module datasheet PDF | HTML 29 May 2024
White paper 3상 통합 GaN 기술이 모터 구동 성능을 극대화하는 방법 PDF | HTML 10 Jul 2024
White paper 三相位整合式 GaN 技術如何實現最高的馬達驅動性能 PDF | HTML 10 Jul 2024
Technical article GaN 기반 모터 시스템 설계로 가정용 에너지 효율 및 비용 절 감 달성 PDF | HTML 28 Jun 2024
Technical article 使用 GaN 式馬達系統設計實現家庭能源效率並節省成本 PDF | HTML 28 Jun 2024
Technical article Achieving household energy efficiency and cost savings with GaN-based motor system designs PDF | HTML 07 Jun 2024
White paper How Three-Phase Integrated GaN Technology Maximizes Motor-Drive Performance PDF | HTML 06 Jun 2024
EVM User's guide DRV7308 Evaluation Module User's Guide 21 May 2024

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

DRV7308EVM — DRV7308 evaluation module

The DRV7308EVM is a module designed for thorough evaluation of the DRV7308 motor driver. The device is a 250W, 450V integrated triple gallium nitride (GaN) FET half-bridge gate driver for motor driver applications. The DRV7308EVM provides three 650V E-mode GaN FET half-bridges capable of directly (...)

User guide: PDF
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Reference designs

TIDA-010273 — 250W motor inverter reference design

This reference design is a 250W motor drive for a major appliances or similar applications, which illustrates a GaN IPM DRV7308 based high efficiency motor inverter without heatsink, also demo a low standby power design with UCC28911. This reference design shows a method to implement sensorless FOC (...)
Design guide: PDF
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VQFN (REN) 68 Ultra Librarian
TI's Standard Terms and Conditions for Evaluation Items apply.

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