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UCC21759-Q1

ACTIVO

Controlador de puerta aislada monocanal de ±10 A y 3.0 kVrms con DESATURACIÓN y pinza interna para I

Detalles del producto

Number of channels 1 Isolation rating Basic Withstand isolation voltage (VISO) (Vrms) 3000 Working isolation voltage (VIOWM) (Vrms) 990 Transient isolation voltage (VIOTM) (VPK) 4242 Power switch IGBT, SiCFET Peak output current (A) 10 Features Active miller clamp, Fault reporting, Integrated analog to PWM sensor, Power good, Short circuit protection, Soft turn-off Output VCC/VDD (max) (V) 33 Output VCC/VDD (min) (V) 13 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 150 Rating Automotive Bootstrap supply voltage (max) (V) 990 Rise time (ns) 33 Fall time (ns) 27 Undervoltage lockout (typ) (V) 12
Number of channels 1 Isolation rating Basic Withstand isolation voltage (VISO) (Vrms) 3000 Working isolation voltage (VIOWM) (Vrms) 990 Transient isolation voltage (VIOTM) (VPK) 4242 Power switch IGBT, SiCFET Peak output current (A) 10 Features Active miller clamp, Fault reporting, Integrated analog to PWM sensor, Power good, Short circuit protection, Soft turn-off Output VCC/VDD (max) (V) 33 Output VCC/VDD (min) (V) 13 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 150 Rating Automotive Bootstrap supply voltage (max) (V) 990 Rise time (ns) 33 Fall time (ns) 27 Undervoltage lockout (typ) (V) 12
SOIC (DW) 16 106.09 mm² 10.3 x 10.3
  • 3kVRMS single channel isolated gate driver
  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 3A
    • Device CDM ESD classofication level C3
  • Drives SiC MOSFETs and IGBTs up to 900Vpk
  • 33V maximum output drive voltage (VDD-VEE)
  • High peak drive current and high CMTI
  • ±10A drive strength and split output
  • 150V/ns minimum CMTI
  • 200ns response time fast DESAT protection
  • 4A internal active Miller clamp
  • 400mA soft turn-off under fault conditions
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-Link or phase voltage
  • Alarm FLT on over current and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Rejects <40ns noise transients and pulses on input pins
  • 12V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage immunity up to 5V
  • 130ns (maximum) propagation delay and 30ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to +150°C
  • Safety-related certifications:
    • 4242VPK basic isolation per EN IEC 60747-17 (VDE 0884-17)
  • 3kVRMS single channel isolated gate driver
  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 3A
    • Device CDM ESD classofication level C3
  • Drives SiC MOSFETs and IGBTs up to 900Vpk
  • 33V maximum output drive voltage (VDD-VEE)
  • High peak drive current and high CMTI
  • ±10A drive strength and split output
  • 150V/ns minimum CMTI
  • 200ns response time fast DESAT protection
  • 4A internal active Miller clamp
  • 400mA soft turn-off under fault conditions
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-Link or phase voltage
  • Alarm FLT on over current and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Rejects <40ns noise transients and pulses on input pins
  • 12V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage immunity up to 5V
  • 130ns (maximum) propagation delay and 30ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to +150°C
  • Safety-related certifications:
    • 4242VPK basic isolation per EN IEC 60747-17 (VDE 0884-17)

The UCC21759-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 900V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21759-Q1 has up to ±10A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 636VRMS working voltage with longer than 40 years isolation barrier life, 6kVPK surge immunity, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI).

The UCC21759-Q1 includes the state-of-art protection features, such as fast short circuit detection, fault reporting, active Miller clamp, and input and output side power supply UVLO optimized for SiC and IGBT power transistors. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.

The UCC21759-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 900V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21759-Q1 has up to ±10A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 636VRMS working voltage with longer than 40 years isolation barrier life, 6kVPK surge immunity, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI).

The UCC21759-Q1 includes the state-of-art protection features, such as fast short circuit detection, fault reporting, active Miller clamp, and input and output side power supply UVLO optimized for SiC and IGBT power transistors. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.

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Documentación técnica

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Tipo Título Fecha
* Data sheet UCC21759 -Q1 Automotive 10A Source/Sink Basic Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI datasheet (Rev. B) PDF | HTML 06 feb 2024
Application brief Does My Design Need a Miller Clamp? PDF | HTML 11 dic 2024
Application note Choosing Appropriate Protection Approach for IGBT and SiC Power Modules PDF | HTML 19 jul 2024
User guide UCC217xx and ISO5x5x Half-Bridge EVM User's Guide for Wolfspeed 1200-V SiC 01 sep 2023
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 16 dic 2021

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Placa de evaluación

UCC21750QDWEVM-025 — Placa de evaluación de conducción y protección para transistores y módulos de potencia SiC e IGBT

The UCC21750QDWEVM-025 is a compact, single channel isolated gate driver board providing drive, bias voltages, desat feature based protection and diagnostic needed for SiC MOSFET and Si IGBT Power Modules housed in 150 x 62 x 17 mm and 106 x 62 x 30 mm packages. This TI EVM is based on 5.7-kVrms (...)
Guía del usuario: PDF
Herramienta de cálculo

SLUC695 UCC217xx XL Calculator Tool

Productos y hardware compatibles

Productos y hardware compatibles

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Herramienta de simulación

PSPICE-FOR-TI — PSpice® para herramienta de diseño y simulación de TI

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Diseños de referencia

PMP23223 — Controlador de compuerta aislado inteligente con diseño de referencia de alimentación de polarizació

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Test report: PDF
Encapsulado Pines Símbolos CAD, huellas y modelos 3D
SOIC (DW) 16 Ultra Librarian

Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

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