SN74BCT2827C

활성

3상 출력을 지원하는 10채널 4.5V~5.5V 버퍼

제품 상세 정보

Technology family BCT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 10 IOL (max) (mA) 12 Supply current (max) (µA) 40000 IOH (max) (mA) -1 Input type Bipolar Output type 3-State Features Damping resistors, Over-voltage tolerant inputs, Power up 3-state, Very high speed (tpd 5-10ns) Rating Catalog Operating temperature range (°C) 0 to 70
Technology family BCT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 10 IOL (max) (mA) 12 Supply current (max) (µA) 40000 IOH (max) (mA) -1 Input type Bipolar Output type 3-State Features Damping resistors, Over-voltage tolerant inputs, Power up 3-state, Very high speed (tpd 5-10ns) Rating Catalog Operating temperature range (°C) 0 to 70
SOIC (DW) 24 159.65 mm² 15.5 x 10.3
  • BiCMOS Design Substantially Reduces ICCZ
  • Output Ports Have Equivalent 25- Resistors; No External Resistors Are Required
  • Specifically Designed to Drive MOS DRAMs
  • 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers
  • Flow-Through Architecture Optimizes PCB Layout
  • Power-Up High-Impedance State
  • ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015
  • Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK) and Flatpacks (W), and Standard Plastic and Ceramic 300-mil DIPs (JT, NT)
  • BiCMOS Design Substantially Reduces ICCZ
  • Output Ports Have Equivalent 25- Resistors; No External Resistors Are Required
  • Specifically Designed to Drive MOS DRAMs
  • 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers
  • Flow-Through Architecture Optimizes PCB Layout
  • Power-Up High-Impedance State
  • ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015
  • Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK) and Flatpacks (W), and Standard Plastic and Ceramic 300-mil DIPs (JT, NT)

These 10-bit buffers and bus drivers are specifically designed to drive the capacitive input characteristics of MOS DRAMs. They provide high-performance bus interface for wide data paths or buses carrying parity.

The 3-state control gate is a 2-input AND gate with active-low inputs so if either output-enable ( or ) input is high, all ten outputs are in the high-impedance state. The outputs are also in the high-impedance state during power-up and power-down conditions. The outputs remain in the high-impedance state while the device is powered down.

The SN54BCT2827C is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74BCT2827C is characterized for operation from 0°C to 70°C.

These 10-bit buffers and bus drivers are specifically designed to drive the capacitive input characteristics of MOS DRAMs. They provide high-performance bus interface for wide data paths or buses carrying parity.

The 3-state control gate is a 2-input AND gate with active-low inputs so if either output-enable ( or ) input is high, all ten outputs are in the high-impedance state. The outputs are also in the high-impedance state during power-up and power-down conditions. The outputs remain in the high-impedance state while the device is powered down.

The SN54BCT2827C is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74BCT2827C is characterized for operation from 0°C to 70°C.

다운로드

관심 가지실만한 유사 제품

open-in-new 대안 비교
비교 대상 장치와 동일한 기능을 지원하는 핀 대 핀
SN74AHCT16244 활성 TTL 호환 CMOS 입력 및 3상 출력을 지원하는 16채널, 4.5V~5.5V 버퍼 Larger voltage range (2V to 5.5V)
다른 핀 출력을 지원하지만 비교 대상 장치와 동일한 기능
SN74LVC827A 활성 3상 출력을 지원하는 10채널, 1.65V~3.6V 버퍼 Voltage range (1.65V to 3.6V), average drive strength (24mA), average propagation delay (5.5ns)

기술 자료

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유형 직함 날짜
* Data sheet 10-Bit Bus/MOS Memory Drivers With 3-State Outputs datasheet (Rev. E) 1991/01/01

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

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