제품 상세 정보

Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 8 IOL (max) (mA) 6 IOH (max) (mA) -6 Input type TTL Output type CMOS Features Balanced outputs, High speed (tpd 10-50ns), Positive input clamp diode Technology family HCT Rating Catalog Operating temperature range (°C) -40 to 85
Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 8 IOL (max) (mA) 6 IOH (max) (mA) -6 Input type TTL Output type CMOS Features Balanced outputs, High speed (tpd 10-50ns), Positive input clamp diode Technology family HCT Rating Catalog Operating temperature range (°C) -40 to 85
SOIC (DW) 24 159.65 mm² 15.5 x 10.3
  • Operating Voltage Range of 4.5 V to 5.5 V
  • Low Power Consumption, 80-µA Max ICC
  • Typical tpd = 12 ns
  • ±6-mA Output Drive at 5 V
  • Low Input Current of 1 µA Max
  • Inputs Are TTL-Voltage Compatible
  • Independent Registers and Enables for A and B Buses
  • Multiplexed Real-Time and Stored Data
  • True Data Paths
  • High-Current 3-State Outputs Can Drive Up To 15 LSTTL Loads

  • Operating Voltage Range of 4.5 V to 5.5 V
  • Low Power Consumption, 80-µA Max ICC
  • Typical tpd = 12 ns
  • ±6-mA Output Drive at 5 V
  • Low Input Current of 1 µA Max
  • Inputs Are TTL-Voltage Compatible
  • Independent Registers and Enables for A and B Buses
  • Multiplexed Real-Time and Stored Data
  • True Data Paths
  • High-Current 3-State Outputs Can Drive Up To 15 LSTTL Loads

The ’HCT652 devices consist of bus-transceiver circuits, D-type flip-flops, and control circuitry arranged for multiplexed transmission of data directly from the data bus or from the internal storage registers. Output-enable (OEAB and OEBA\) inputs are provided to control the transceiver functions. Select-control (SAB and SBA) inputs are provided to select real-time or stored data transfer. A low input level selects real-time data; a high input level selects stored data. Figure 1 illustrates the four fundamental bus-management functions that can be performed with these devices.

Data on the A or B data bus, or both, can be stored in the internal D-type flip-flops by low-to-high transitions at the appropriate clock (CLKAB or CLKBA) terminals, regardless of the select- or output-control terminals. When SAB and SBA are in the real-time transfer mode, it is possible to store data without using the internal D-type flip-flops by simultaneously enabling OEAB and OEBA\. In this configuration, each output reinforces its input. When all other data sources to the two sets of bus lines are at high impedance, each set of bus lines remains at its last state.

To ensure the high-impedance state during power up or power down, OEBA\ should be tied to VCC through a pullup resistor and OEAB should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sinking/current-sourcing capability of the driver.

The ’HCT652 devices consist of bus-transceiver circuits, D-type flip-flops, and control circuitry arranged for multiplexed transmission of data directly from the data bus or from the internal storage registers. Output-enable (OEAB and OEBA\) inputs are provided to control the transceiver functions. Select-control (SAB and SBA) inputs are provided to select real-time or stored data transfer. A low input level selects real-time data; a high input level selects stored data. Figure 1 illustrates the four fundamental bus-management functions that can be performed with these devices.

Data on the A or B data bus, or both, can be stored in the internal D-type flip-flops by low-to-high transitions at the appropriate clock (CLKAB or CLKBA) terminals, regardless of the select- or output-control terminals. When SAB and SBA are in the real-time transfer mode, it is possible to store data without using the internal D-type flip-flops by simultaneously enabling OEAB and OEBA\. In this configuration, each output reinforces its input. When all other data sources to the two sets of bus lines are at high impedance, each set of bus lines remains at its last state.

To ensure the high-impedance state during power up or power down, OEBA\ should be tied to VCC through a pullup resistor and OEAB should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sinking/current-sourcing capability of the driver.

다운로드

관심 가지실만한 유사 제품

open-in-new 대안 비교
다른 핀 출력을 지원하지만 비교 대상 장치와 동일한 기능
CD74HCT245 활성 3상 출력을 지원하는 고속 CMOS 로직 비인버팅 8진 버스 트랜시버 Voltage range (4.5V to 5.5V), average drive strength (4mA), average propagation delay (22ns)

기술 자료

star =TI에서 선정한 이 제품의 인기 문서
검색된 결과가 없습니다. 검색어를 지우고 다시 시도하십시오.
1개 모두 보기
유형 직함 날짜
* Data sheet SN54HCT652, SN74HCT652 datasheet (Rev. D) 2003/03/18

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

지원 및 교육

TI 엔지니어의 기술 지원을 받을 수 있는 TI E2E™ 포럼

콘텐츠는 TI 및 커뮤니티 기고자에 의해 "있는 그대로" 제공되며 TI의 사양으로 간주되지 않습니다. 사용 약관을 참조하십시오.

품질, 패키징, TI에서 주문하는 데 대한 질문이 있다면 TI 지원을 방문하세요. ​​​​​​​​​​​​​​