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理想二極體/ORing 控制器

LM74721-Q1

現行

車用、無 TVS 低 IQ 反向電池保護理想二極體控制器、主動式整流

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產品規格表

LM74721-Q1

現行
產品規格表 立即訂購

產品詳細資料

Vin (min) (V) 3 Vin (max) (V) 65 Number of channels 1 Features Automotive load dump compatibility, Enable, Integrated VDS clamp, Linear control, Reverse current blocking, Reverse polarity protection Iq (typ) (mA) 0.032 Iq (max) (mA) 0.038 TI functional safety category Functional Safety-Capable FET External back-to-back FET, External single FET IGate sink (typ) (mA) 2.1 IGate pulsed (typ) (A) 2.1 Operating temperature range (°C) -40 to 125 VSense reverse (typ) (mV) -6.5 Design support EVM Rating Automotive VGS (max) (V) 13 Shutdown current (ISD) (mA) (A) 0.0035 Device type Ideal diode controller Product type Ideal diode controller
Vin (min) (V) 3 Vin (max) (V) 65 Number of channels 1 Features Automotive load dump compatibility, Enable, Integrated VDS clamp, Linear control, Reverse current blocking, Reverse polarity protection Iq (typ) (mA) 0.032 Iq (max) (mA) 0.038 TI functional safety category Functional Safety-Capable FET External back-to-back FET, External single FET IGate sink (typ) (mA) 2.1 IGate pulsed (typ) (A) 2.1 Operating temperature range (°C) -40 to 125 VSense reverse (typ) (mV) -6.5 Design support EVM Rating Automotive VGS (max) (V) 13 Shutdown current (ISD) (mA) (A) 0.0035 Device type Ideal diode controller Product type Ideal diode controller
WSON (DRR) 12 9 mm² 3 x 3
  • AEC-Q100 qualified with the following results
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4B
  • 3-V to 65-V input range
  • Reverse input protection down to –33 V
  • Integrated VDS clamp for Input TVS less operation for ISO7637 pulse suppression
  • Low quiescent current 35 µA (max) in operation
  • Low 3.3-µA (max) shutdown current (EN = Low)
  • Ideal diode operation with 17-mV A to C forward voltage drop regulation
  • Drives external back-to-back N-Channel MOSFETs
  • Integrated 30-mA boost regulator
  • Fast response to reverse current blocking: 0.5 µs
  • Active rectification up to 100 kHz
  • Adjustable overvoltage protection
  • Available in space saving 12-pin WSON package
  • Pin-to-pin compatible with LM74720-Q1
  • AEC-Q100 qualified with the following results
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4B
  • 3-V to 65-V input range
  • Reverse input protection down to –33 V
  • Integrated VDS clamp for Input TVS less operation for ISO7637 pulse suppression
  • Low quiescent current 35 µA (max) in operation
  • Low 3.3-µA (max) shutdown current (EN = Low)
  • Ideal diode operation with 17-mV A to C forward voltage drop regulation
  • Drives external back-to-back N-Channel MOSFETs
  • Integrated 30-mA boost regulator
  • Fast response to reverse current blocking: 0.5 µs
  • Active rectification up to 100 kHz
  • Adjustable overvoltage protection
  • Available in space saving 12-pin WSON package
  • Pin-to-pin compatible with LM74720-Q1

The LM74721-Q1 ideal diode controller drives and controls external back to back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON and OFF control and overvoltage protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –33-V DC. An integrated ideal diode controller (GATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. Integrated VDS clamp feature enables input TVS less system designs for automotive ISO7637 pulse suppression. A strong boost regulator with fast turn ON and OFF comparators ensures robust and efficient MOSFET switching performance during automotive testing such as ISO16750 or LV124, where an ECU is subjected to input short interruptions and AC superimpose input signals up to 100-kHz frequency. Low Quiescent Current 35 µA (maximum) in operation enables always ON system designs. With a second MOSFET in the power path, the device allows load disconnect control using EN pin. Quiescent current reduces to 3.3 µA (maximum) with EN low. The device features an adjustable overvoltage cutoff protection feature for load dump protection.

The LM74721-Q1 ideal diode controller drives and controls external back to back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON and OFF control and overvoltage protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –33-V DC. An integrated ideal diode controller (GATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. Integrated VDS clamp feature enables input TVS less system designs for automotive ISO7637 pulse suppression. A strong boost regulator with fast turn ON and OFF comparators ensures robust and efficient MOSFET switching performance during automotive testing such as ISO16750 or LV124, where an ECU is subjected to input short interruptions and AC superimpose input signals up to 100-kHz frequency. Low Quiescent Current 35 µA (maximum) in operation enables always ON system designs. With a second MOSFET in the power path, the device allows load disconnect control using EN pin. Quiescent current reduces to 3.3 µA (maximum) with EN low. The device features an adjustable overvoltage cutoff protection feature for load dump protection.
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類型 標題 日期
* Data sheet LM74721-Q1 TVS Less Low IQ Automotive Reverse Battery Protection Ideal Diode Controller with Active Rectification datasheet (Rev. B) PDF | HTML 2022年 7月 7日
Certificate LM74721EVM EU RoHS Declaration of Conformity (DoC) 2022年 5月 27日
Technical article 3 ways to design a low quiescent-current (Iq) automotive reverse battery protectio PDF | HTML 2021年 11月 18日
Analog Design Journal Going TVS-less in Automotive Reverse Battery Protection Designs PDF | HTML 2021年 11月 18日
Application note Basics of Ideal Diodes (Rev. B) PDF | HTML 2021年 10月 5日
Application brief Active Rectification and its Advantages in Automotive ECU Designs PDF | HTML 2021年 9月 29日
Analog Design Journal Automotive EMC-compliant reverse-battery protection with ideal-diode controllers 2020年 9月 22日

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LM74721EVM — 適用於理想二極體控制器的 LM74721-Q1 評估模組

在反向電池保護應用中，LM74721EVM 評估模組可協助設計人員評估 LM74721-Q1 理想二極體控制器的運作及性能。此評估模組展示 LM74721-Q1 如何搭配用於 IQ 和快速瞬態回應的整合式升壓穩壓器，以及搭配用於無 TVS 運作的整合式輸入 VDS 箝位，控制兩個背對背 N 通道功率 MOSFET，其先連接理想二極體 MOSFET，緊接著再連接用於切換輸出及電源路徑切斷的第二個 MOSFET。

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