計算工具
FET-INRUSH-SOA-CALC — FET SOA margin calculator for dvdt based startup
The design calculator allows user to estimate the FET SOA margin while starting up with dVdt based startup for inrush current control
LM7480
- Qualified for extended temperature applications
- Device temperature: –55°C to +125°C ambient operating temperature range
- 3-V to 65-V input range
- Reverse input protection down to –65 V
- Drives external back-to-back N-channel MOSFETs in common drain and common source configurations
- Ideal diode operation with 10.5-mV A to C forward voltage drop regulation (LM74800)
- Low reverse detection threshold (–4.5 mV) with fast response (0.5 µs)
- 20-mA peak gate (DGATE) turnon current
- 2.6-A peak DGATE turnoff current
- Adjustable overvoltage protection
- Low 2.87-µA shutdown current (EN/UVLO = Low)
- Available in space saving 12-pin WSON package
The LM7480 ideal diode controller drives and controls external back to back N-channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control and overvoltage protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V input powered systems. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) and overvoltage protection using HGATE control. The device features an adjustable overvoltage cut-off protection feature. LM7480 has two variants, LM74800 and LM74801. LM74800 employs reverse current blocking using linear regulation and comparator scheme versus LM74801, which supports a comparator based scheme. With common-drain configuration of the power MOSFETs, the mid-point can be utilized for ORing designs using another ideal diode. The LM7480 has a maximum voltage rating of 65 V. The loads can be protected from extended overvoltage transients like 200-V unsuppressed load dumps in 24-V battery systems by configuring the device with external MOSFETs in common source topology.
技術文件
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檢視所有 1 | 類型 | 標題 | 日期 | ||
|---|---|---|---|---|
| * | Data sheet | LM7480 3-V to 65-V, Ideal Diode Controller Driving Back to Back NFETs datasheet | PDF | HTML | 2022年 12月 21日 |
設計與開發
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開發板
LM74800EVM-CD — LM74800-Q1 理想二極體控制器評估模組
TI's Evaluation Module LM74800EVM-CD helps designers evaluate the operation and performance of the LM7480-Q1 ideal diode controllers (LM74800QDRR and LM74801QDRR) in reverse battery protection applications. This evaluation module demonstrates how LM7480-Q1 controls two back-back N-channel power (...)
開發板
LM74800EVM-CS — LM7480-Q1 理想二極體控制器評估模組
TI 的評估模組 LM74800EVM-CD 可協助設計人員評估 LM7480-Q1 理想二極體控制器 (LM74800QDRR 和 LM74801QDRR) 在反向電池保護應用中的運作及性能。此評估模組展示 LM7480-Q1 如何控制兩個背對背 N 通道功率 MOSFET，首先連接理想二極體 MOSFET，接著連接第二個 MOSFET，以進行切換輸出及電源路徑切斷。
模擬工具
PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具
PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
參考設計
PMP22951 — 具有主動鉗位的 54-V、3-kW 相移式全橋參考設計
參考設計為 GaN 式 3-kW 相移式全橋 (PSFB) 轉換器。此設計二次側使用主動箝位，可減少同步整流器 (SR) MOSFET 的電壓應力，使用擁有更出色品質因數 (FoM) 的低電壓額定值 MOSFET。PMP22951 在一次側使用 30-mΩ GaN，以及針對同步整流器使用 100-V、1.8-mΩ GaN。利用 TMS320F280049C 即時微控制實現 PSFB 控制。PSFB 轉換器可在 140-kHz 切換頻率下運作，並在 385-V 輸入下達到 97.45% 的峰值效率。
Test report: PDF
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| WSON (DRR) | 12 | Ultra Librarian |
訂購與品質
內含資訊：
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
內含資訊：
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。