計算工具
FET-INRUSH-SOA-CALC — FET SOA margin calculator for dvdt based startup
The design calculator allows user to estimate the FET SOA margin while starting up with dVdt based startup for inrush current control
LM7481
- Qualified for extended temperature applications
- Device temperature: –55°C to +125°C ambient operating temperature range
- 3-V to 65-V input range
- Reverse input protection down to –65 V
- Drives external back to back N-channel MOSFETs
- Ideal diode operation with 9.1-mV A to C forward voltage drop regulation
- Low reverse detection threshold (–4 mV) with fast response (0.5 µs)
- Active rectification up to 200-KHz
- 60-mA peak gate (DGATE) turn-on current
- 2.6-A peak DGATE turnoff current
- Integrated 3.8-mA charge pump
- Adjustable overvoltage protection
- Low 2.87-µA shutdown current (EN/UVLO=Low)
- 2.6-A peak DGATE turn-off current
- Meets automotive ISO7637 transient requirements with a suitable TVS diode
- Available in space saving 12-pin WSON package
The LM74810 ideal diode controller drives and controls external back to back N-channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control and overvoltage protection. The wide input supply of 3V to 65V allows protection and control of 12-V and 24-V input powered systems. The device can withstand and protect the loads from negative supply voltages down to –65-V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) and overvoltage protection using HGATE control. The device features an adjustable overvoltage cut-off protection feature. LM74810 employs reverse current blocking using linear regulation and comparator scheme. With common drain configuration of the power MOSFETs, the mid-point can be utilized for OR-ing designs using another ideal diode. The LM74810 has a maximum voltage rating of 65V. The loads can be protected from extended overvoltage transients like 200-V unsuppressed load dumps in 24-V battery systems by configuring the device with external MOSFETs in common source topology.
技術文件
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檢視所有 1 | 類型 | 標題 | 日期 | ||
|---|---|---|---|---|
| * | Data sheet | LM7481 3-V to 65-V Ideal Diode Controller Driving Back to Back NFETs datasheet | PDF | HTML | 2022年 12月 22日 |
設計與開發
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開發板
LM74810EVM — LM7481-Q1 理想二極體控制器評估模組
TI 的評估模組 LM74810EVM 可協助設計人員評估 LM7481-Q1 理想二極體控制器 (LM74810QDRR) 在反向電池保護應用中的運作及性能。此評估模組展示 LM7481-Q1 理想二極體控制器為高功率 (>100W) 汽車 ECU 設計提供反向電池保護的能力。此裝置控制兩個背對背 N 通道功率 MOSFET，首先連接理想二極體 MOSFET，接著連接第二個 MOSFET，以進行切換輸出及電源路徑切斷。
模擬工具
PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具
PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| WSON (DRR) | 12 | Ultra Librarian |
訂購與品質
內含資訊：
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
內含資訊：
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。