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SN74CBTLV3257-EP

現行

強化型產品低電壓 4 位元 2 選 1 FET 多工器/解多工器

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產品規格表

SN74CBTLV3257-EP

現行
產品規格表 立即訂購

產品詳細資料

Configuration 2:1 SPDT Number of channels 4 Power supply voltage - single (V) 2.5, 3.3 Protocols Analog, I2C, I2S, JTAG, RGMII, SPI, TDM, UART Ron (typ) (Ω) 5 ON-state leakage current (max) (µA) 1 Bandwidth (MHz) 200 Operating temperature range (°C) -55 to 125 Features Powered-off protection Input/output continuous current (max) (mA) 128 Rating HiRel Enhanced Product Drain supply voltage (max) (V) 3.6 Supply voltage (max) (V) 3.6
Configuration 2:1 SPDT Number of channels 4 Power supply voltage - single (V) 2.5, 3.3 Protocols Analog, I2C, I2S, JTAG, RGMII, SPI, TDM, UART Ron (typ) (Ω) 5 ON-state leakage current (max) (µA) 1 Bandwidth (MHz) 200 Operating temperature range (°C) -55 to 125 Features Powered-off protection Input/output continuous current (max) (mA) 128 Rating HiRel Enhanced Product Drain supply voltage (max) (V) 3.6 Supply voltage (max) (V) 3.6
TSSOP (PW) 16 32 mm² 5 x 6.4
  • Controlled baseline
    • One assembly site
    • One test site
    • One fabrication site
  • Extended temperature performance of –55°C to 125°C
  • Enhanced diminishing manufacturing sources (DMS) support
  • Enhanced product-change notification
  • Qualification pedigree (1)
  • 5-Ω switch connection between two ports
  • Rail-to-rail switching on data I/O ports
  • Ioff supports partial-power-down mode operation
  • Latch-up performance exceeds 100 mA per JESD 78, class II
  • ESD protection exceeds JESD 22
    • 2000-V human-body model (A114-A)
    • 200-V machine model (A115-A)

(1)Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.
  • Controlled baseline
    • One assembly site
    • One test site
    • One fabrication site
  • Extended temperature performance of –55°C to 125°C
  • Enhanced diminishing manufacturing sources (DMS) support
  • Enhanced product-change notification
  • Qualification pedigree (1)
  • 5-Ω switch connection between two ports
  • Rail-to-rail switching on data I/O ports
  • Ioff supports partial-power-down mode operation
  • Latch-up performance exceeds 100 mA per JESD 78, class II
  • ESD protection exceeds JESD 22
    • 2000-V human-body model (A114-A)
    • 200-V machine model (A115-A)

(1)Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.

The SN74CBTLV3257 is a 4-bit 1-of-2 high-speed FET multiplexer/demultiplexer. The low on-state resistance of the switch allows connections to be made with minimal propagation delay.

The select (S) input controls the data flow. The FET multiplexers/demultiplexers are disabled when the output-enable (OE) input is high.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current does not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CBTLV3257 is a 4-bit 1-of-2 high-speed FET multiplexer/demultiplexer. The low on-state resistance of the switch allows connections to be made with minimal propagation delay.

The select (S) input controls the data flow. The FET multiplexers/demultiplexers are disabled when the output-enable (OE) input is high.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current does not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
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類型 標題 日期
* Data sheet SN74CBTLV3257-EP Low-Voltage 4-Bit 1-of-2 FET Multiplexer/Demultiplexer datasheet (Rev. A) PDF | HTML 2019年 5月 6日
* VID SN74CBTLV3257-EP VID V6208615 2016年 6月 21日
Application note Selecting the Correct Texas Instruments Signal Switch (Rev. E) PDF | HTML 2022年 6月 2日
Application note Multiplexers and Signal Switches Glossary (Rev. B) PDF | HTML 2021年 12月 1日
Selection guide Little Logic Guide 2018 (Rev. G) 2018年 7月 6日
Selection guide Logic Guide (Rev. AB) 2017年 6月 12日
Application note How to Select Little Logic (Rev. A) 2016年 7月 26日
Application note Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 2015年 12月 2日
User guide LOGIC Pocket Data Book (Rev. B) 2007年 1月 16日
More literature Digital Bus Switch Selection Guide (Rev. A) 2004年 11月 10日
Product overview Design Summary for WCSP Little Logic (Rev. B) 2004年 11月 4日
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004年 7月 8日
User guide Signal Switch Data Book (Rev. A) 2003年 11月 14日
Application note Bus FET Switch Solutions for Live Insertion Applications 2003年 2月 7日
Application note Texas Instruments Little Logic Application Report 2002年 11月 1日
Application note TI IBIS File Creation, Validation, and Distribution Processes 2002年 8月 29日
More literature Standard Linear & Logic for PCs, Servers & Motherboards 2002年 6月 13日
User guide CBT (5-V) And CBTLV (3.3-V) Bus Switches Data Book (Rev. B) 1998年 12月 1日

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