首頁 射頻 (RF) 與微波 射頻放大器 RF FDA
首頁
射頻 (RF) 與微波
射頻放大器
RF FDA
最新

TRF0208-SEP

預覽

耐輻射、近 DC 至 11GHz 3dB BW 單端至差動 RF 放大器

立即訂購
產品規格表

TRF0208-SEP

預覽
產品規格表 立即訂購

產品詳細資料

Current consumption (mA) 130 Frequency (min) (MHz) 1 Frequency (max) (MHz) 11000 Gain (typ) (dB) 16 Noise figure (typ) (dB) 6.8 OIP3 (typ) (dBm) 36 P1dB (typ) (dBm) 14.5 Number of channels 1 Operating temperature range (°C) 25 to 25 Type Active Balun, RF FDA Rating Space
Current consumption (mA) 130 Frequency (min) (MHz) 1 Frequency (max) (MHz) 11000 Gain (typ) (dB) 16 Noise figure (typ) (dB) 6.8 OIP3 (typ) (dBm) 36 P1dB (typ) (dBm) 14.5 Number of channels 1 Operating temperature range (°C) 25 to 25 Type Active Balun, RF FDA Rating Space
WQFN-FCRLF (RPV) 12 4 mm² 2 x 2
  • Vendor item drawing available, VID V62/23605
  • Radiation:
    • Total ionizing dose (TID)
      • Radiation hardness assurance (RHA) up to 30krad (Si) TID
      • Enhanced low dose rate sensitivity (ELDRS) free process
      • High dose rate radiation lot acceptance testing (HDR RLAT) up to 30krad (Si) TID
    • Single event effects (SEE)
      • Single event latch-up (SEL) immune to linear energy transfer (LET) of 43MeV‑cm2/mg
      • Single event transient (SET) characterized to LET of 43MeV‑cm2/mg
  • Space-enhanced plastic (SEP)
    • Lead-free construction
    • Extended temperature range: –55°C to +125°C
  • Excellent performance driving RF ADCs
  • Fixed power gain of 16dB in single-ended-to-differential mode
  • Bandwidth: 11GHz, 3dB
  • Gain flatness: 8GHz, 1dB
  • OIP3: 36dBm (2GHz), 32dBm (6GHz)
  • P1dB: 14.5dBm (2GHz), 11dBm (6GHz)
  • NF: 6.8dB (2GHz), 6.8dB (6GHz)
  • Gain and phase imbalance: ±0.3dB and ±3º
  • Power-down feature
  • Single-supply operation: 3.3V
  • Active current: 138mA
  • Vendor item drawing available, VID V62/23605
  • Radiation:
    • Total ionizing dose (TID)
      • Radiation hardness assurance (RHA) up to 30krad (Si) TID
      • Enhanced low dose rate sensitivity (ELDRS) free process
      • High dose rate radiation lot acceptance testing (HDR RLAT) up to 30krad (Si) TID
    • Single event effects (SEE)
      • Single event latch-up (SEL) immune to linear energy transfer (LET) of 43MeV‑cm2/mg
      • Single event transient (SET) characterized to LET of 43MeV‑cm2/mg
  • Space-enhanced plastic (SEP)
    • Lead-free construction
    • Extended temperature range: –55°C to +125°C
  • Excellent performance driving RF ADCs
  • Fixed power gain of 16dB in single-ended-to-differential mode
  • Bandwidth: 11GHz, 3dB
  • Gain flatness: 8GHz, 1dB
  • OIP3: 36dBm (2GHz), 32dBm (6GHz)
  • P1dB: 14.5dBm (2GHz), 11dBm (6GHz)
  • NF: 6.8dB (2GHz), 6.8dB (6GHz)
  • Gain and phase imbalance: ±0.3dB and ±3º
  • Power-down feature
  • Single-supply operation: 3.3V
  • Active current: 138mA

The TRF0208-SEP is a very high performance fully differential amplifier (FDA) optimized for radio frequency (RF) applications. This device is excellent for ac-coupled applications that require a single-ended to differential conversion when driving an analog-to-digital converter (ADC) such as the high-performance ADC12DJ5200-SEP. The on-chip matching components simplify printed circuit board (PCB) implementation and provide the highest performance over the usable bandwidth. The device is fabricated in Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, WQFN-FCRLF package.

The TRF0208-SEP operates on a single-rail supply and consumes about 138mA of active current. A power-down feature is available for power saving.

The TRF0208-SEP is a very high performance fully differential amplifier (FDA) optimized for radio frequency (RF) applications. This device is excellent for ac-coupled applications that require a single-ended to differential conversion when driving an analog-to-digital converter (ADC) such as the high-performance ADC12DJ5200-SEP. The on-chip matching components simplify printed circuit board (PCB) implementation and provide the highest performance over the usable bandwidth. The device is fabricated in Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, WQFN-FCRLF package.

The TRF0208-SEP operates on a single-rail supply and consumes about 138mA of active current. A power-down feature is available for power saving.
filter 尋找其它 RF FDA
下載 觀看有字幕稿的影片 影片

技術文件

star =TI 所選的此產品重要文件
找不到結果。請清除您的搜尋條件，然後再試一次。
檢視所有 4
類型 標題 日期
* Data sheet TRF0208-SEP Radiation-Tolerant, Near-DC to 11GHz, Fully Differential RF Amplifier datasheet (Rev. A) PDF | HTML 2024年 6月 6日
EVM User's guide TRF0208-SEP Evaluation Module User's Guide (Rev. A) PDF | HTML 2024年 7月 3日
Certificate TRF0208SEP-EVM EU Declaration of Conformity (DoC) 2024年 6月 12日
Technical article Phased array antenna systems: A new paradigm for electronics in satellites (Rev. A) PDF | HTML 2024年 6月 11日

設計與開發

如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

TRF0208SEP-EVM — TRF0208-SEP 評估模組

TRF0208-SEP 評估模組 (EVM) 可用於評估 TRF0208-SEP 裝置，其為差動 RF 放大器，採用 2mm × 2mm、12 接腳 WQFN 封裝。此裝置旨在驅動高速和 RF 差動輸入 ADC，通常可消除對雙元件 (增益區塊和被動式平衡不平衡轉換器) 驅動級的需求。

使用指南: PDF | HTML
TI.com 無法提供
參考設計

TIDA-010274 — Space-grade discrete RF sampling transceiver reference design

This reference design incorporates a 10 GSPS dual digital-to-analog converter and a 5 GSPS dual analog-to-digital converter with active baluns on the RF interface supporting up through X-band. The design also incorporates a space-grade clocking daughter card and a space-grade power solution (...)
Design guide: PDF
封裝 針腳 CAD 符號、佔位空間與 3D 模型
WQFN-FCRLF (RPV) 12 Ultra Librarian
適用 TI 的評估品項標準條款與條件。

訂購與品質

內含資訊：
  • RoHS
  • REACH
  • 產品標記
  • 鉛塗層/球物料
  • MSL 等級/回焊峰值
  • MTBF/FIT 估算值
  • 材料內容
  • 認證摘要
  • 進行中持續性的可靠性監測
內含資訊：
  • 晶圓廠位置
  • 組裝地點

建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。

支援與培訓

內含 TI 工程師技術支援的 TI E2E™ 論壇

以英文檢視所有論壇主題

內容係由 TI 和社群貢獻者依「現狀」提供，且不構成 TI 規範。檢視使用條款。

若有關於品質、封裝或訂購 TI 產品的問題，請參閱 TI 支援。​​​​​​​​​​​​​​

影片