Gehäuseinformationen
| Gehäuse | Pins VSSOP (DGK) | 8 |
| Betriebstemperaturbereich (°C) -40 to 125 |
| Gehäusemenge | Träger 2.500 | LARGE T&R |
Merkmale von INA849
- Ultra-low noise: 1-nV/√Hz input voltage noise (typical)
- Precision super-beta input
performance:
- Low offset voltage: 35 µV (maximum)
- Low offset voltage drift: 0.4 µV/°C (maximum)
- Low input bias current: 20 nA (maximum)
- Low gain drift: 5 ppm/°C for G = 1 (maximum)
- Bandwidth: 28 MHz (G = 1), 8 MHz (G = 100)
- Slew rate: 35 V/µs
- Common-mode rejection: 120 dB (minimum) for maximum gain
- Supply range:
- Single supply: 8 V to 36 V
- Dual supply: ±4 V to ±18 V
- Specified temperature range: –40°C to +125°C
- Packages: 8-pin SOIC and VSSOP
Beschreibung von INA849
The INA849 is an ultra-low noise instrumentation amplifier optimized for maximum accuracy in high-resolution systems and operation over a wide single-supply or dual-supply range. The device offers significantly lower input bias current than competitors as a result of super-beta input transistors. A state-of-the-art manufacturing process provides exceptionally low voltage noise, input offset voltage, and offset voltage drift.
Precisely matched integrated resistors provide a high, 92-dB (G = 1) common-mode rejection across the full input common-mode range. A single external resistor sets any gain from 1 to 10,000. The current-feedback topology of the INA849 provides wide bandwidth at higher gains for very-small, fast-moving signals. For example, the device provides 8 MHz of bandwidth at G = 100, and 28 MHz at a G = 1, with a fast 0.4-µs settling time (0.01%) for directly driving high-resolution, analog-to-digital converters (ADCs).