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SN54ABT541

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8-Kanal-Puffer, 4,5 bis 5,5 V mit TTL-kompatiblen CMOS-Eingängen und Tri-State-Ausgängen für die Rüs

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Datenblatt

SN54ABT541

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Produktdetails

Technology family ABT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 8 IOL (max) (mA) 48 Supply current (max) (µA) 250 IOH (max) (mA) -24 Input type TTL-Compatible CMOS Output type 3-State Features Over-voltage tolerant inputs, Partial power down (Ioff), Power up 3-state, Ultra high speed (tpd <5ns) Rating Military Operating temperature range (°C) -55 to 125
Technology family ABT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 8 IOL (max) (mA) 48 Supply current (max) (µA) 250 IOH (max) (mA) -24 Input type TTL-Compatible CMOS Output type 3-State Features Over-voltage tolerant inputs, Partial power down (Ioff), Power up 3-state, Ultra high speed (tpd <5ns) Rating Military Operating temperature range (°C) -55 to 125
CDIP (J) 20 167.464 mm² 24.2 x 6.92 CFP (W) 20 90.5828 mm² 13.09 x 6.92 LCCC (FK) 20 79.0321 mm² 8.89 x 8.89
  • State-of-the-Art EPIC-IIB™ BiCMOS Design Significantly Reduces Power Dissipation
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
  • Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C
  • High-Impedance State During Power Up and Power Down
  • High-Drive Outputs (-32-mA IOH, 64-mA IOL)
  • Package Options Include Plastic Small-Outline (DW), Shrink Small-Outline (DB), and Thin Shrink Small-Outline (PW) Packages, Ceramic Chip Carriers (FK), Ceramic Flat (W) Package, and Plastic (N) and Ceramic (J) DIPs

EPIC-IIB is a trademark of Texas Instruments.
  • State-of-the-Art EPIC-IIB™ BiCMOS Design Significantly Reduces Power Dissipation
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
  • Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C
  • High-Impedance State During Power Up and Power Down
  • High-Drive Outputs (-32-mA IOH, 64-mA IOL)
  • Package Options Include Plastic Small-Outline (DW), Shrink Small-Outline (DB), and Thin Shrink Small-Outline (PW) Packages, Ceramic Chip Carriers (FK), Ceramic Flat (W) Package, and Plastic (N) and Ceramic (J) DIPs

EPIC-IIB is a trademark of Texas Instruments.

The SN54ABT541 and SN74ABT541B octal buffers and line drivers are ideal for driving bus lines or buffering memory address registers. The devices feature inputs and outputs on opposite sides of the package to facilitate printed circuit board layout.

The 3-state control gate is a two-input AND gate with active-low inputs so that if either output-enable (OE1 or OE2) input is high, all eight outputs are in the high-impedance state.

When VCC is between 0 and 2.1 V, the device is in the high-impedance state during power up or power down. However, to ensure the high-impedance state above 2.1 V, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN54ABT541 is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74ABT541B is characterized for operation from -40°C to 85°C.

The SN54ABT541 and SN74ABT541B octal buffers and line drivers are ideal for driving bus lines or buffering memory address registers. The devices feature inputs and outputs on opposite sides of the package to facilitate printed circuit board layout.

The 3-state control gate is a two-input AND gate with active-low inputs so that if either output-enable (OE1 or OE2) input is high, all eight outputs are in the high-impedance state.

When VCC is between 0 and 2.1 V, the device is in the high-impedance state during power up or power down. However, to ensure the high-impedance state above 2.1 V, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN54ABT541 is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74ABT541B is characterized for operation from -40°C to 85°C.
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Technische Dokumentation

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Typ Titel Datum
* Data sheet SN54ABT541, SN74ABT541B datasheet (Rev. L) 01 Dez 2006
* SMD SN54ABT541 SMD 5962-94718 21 Jun 2016
Application note Implications of Slow or Floating CMOS Inputs (Rev. E) 26 Jul 2021
Selection guide Logic Guide (Rev. AB) 12 Jun 2017
Application note Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 02 Dez 2015
User guide LOGIC Pocket Data Book (Rev. B) 16 Jan 2007
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 08 Jul 2004
Application note Selecting the Right Level Translation Solution (Rev. A) 22 Jun 2004
Application note Quad Flatpack No-Lead Logic Packages (Rev. D) 16 Feb 2004
Application note TI IBIS File Creation, Validation, and Distribution Processes 29 Aug 2002
Application note Power-Up 3-State (PU3S) Circuits in TI Standard Logic Devices 10 Mai 2002
Selection guide Advanced Bus Interface Logic Selection Guide 09 Jan 2001
Application note Bus-Interface Devices With Output-Damping Resistors Or Reduced-Drive Outputs (Rev. A) 01 Aug 1997
Application note Advanced BiCMOS Technology (ABT) Logic Characterization Information (Rev. B) 01 Jun 1997
Application note Designing With Logic (Rev. C) 01 Jun 1997
Application note Advanced BiCMOS Technology (ABT) Logic Enables Optimal System Design (Rev. A) 01 Mär 1997
Application note Family of Curves Demonstrating Output Skews for Advanced BiCMOS Devices (Rev. A) 01 Dez 1996
Application note Input and Output Characteristics of Digital Integrated Circuits 01 Okt 1996
Application note Live Insertion 01 Okt 1996
Application note Understanding Advanced Bus-Interface Products Design Guide 01 Mai 1996

Design und Entwicklung

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Gehäuse Pins CAD-Symbole, Footprints und 3D-Modelle
CDIP (J) 20 Ultra Librarian
CFP (W) 20 Ultra Librarian
LCCC (FK) 20 Ultra Librarian
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