Gehäuseinformationen
| Gehäuse | Pins SOIC (D) | 14 |
| Betriebstemperaturbereich (°C) -40 to 125 |
| Gehäusemenge | Träger 2.500 | LARGE T&R |
Merkmale von SN74AHCT126-EP
- Controlled Baseline
- One Assembly/Test Site, One Fabrication Site
- Extended Temperature Performance of –40°C to 125°C
- Enhanced Diminishing Manufacturing Sources (DMS) Support
- Enhanced Product-Change Notification
- Qualification Pedigree
- ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
- Inputs Are TTL-Voltage Compatible
Component qualification in accordance with JEDEC and industry
standards to ensure reliable operation over an extended
temperature range. This includes, but is not limited to, Highly
Accelerated Stress Test (HAST) or biased 85/85, temperature
cycle, autoclave or unbiased HAST, electromigration, bond
intermetallic life, and mold compound life. Such qualification
testing should not be viewed as justifying use of this component
beyond specified performance and environmental limits.
Beschreibung von SN74AHCT126-EP
The SN74AHCT126 device is a quadruple bus buffer gate featuring independent line drivers with 3-state outputs. Each output is disabled when the associated output-enable (OE) input is low. When OE is high, the respective gate passes the data from the A input to its Y output.
To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.