Detalles del producto

Configuration 1:1 SPST Number of channels 2 Power supply voltage - single (V) 2.5, 3.3 Protocols Analog, I2C, UART Ron (typ) (Ω) 5 CON (typ) (pF) 4 ON-state leakage current (max) (µA) 20 Bandwidth (MHz) 100 Operating temperature range (°C) -40 to 85 Features Powered-off protection, Signal path translation Input/output continuous current (max) (mA) 128 Rating Catalog Drain supply voltage (max) (V) 3.6 Supply voltage (max) (V) 3.6
Configuration 1:1 SPST Number of channels 2 Power supply voltage - single (V) 2.5, 3.3 Protocols Analog, I2C, UART Ron (typ) (Ω) 5 CON (typ) (pF) 4 ON-state leakage current (max) (µA) 20 Bandwidth (MHz) 100 Operating temperature range (°C) -40 to 85 Features Powered-off protection, Signal path translation Input/output continuous current (max) (mA) 128 Rating Catalog Drain supply voltage (max) (V) 3.6 Supply voltage (max) (V) 3.6
SSOP (DCT) 8 11.8 mm² 2.95 x 4 VSSOP (DCU) 8 6.2 mm² 2 x 3.1
  • Output Voltage Translation Tracks VCC
  • Supports Mixed-Mode Signal Operation on All Data
    I/O Ports
    • 5-V Input Down to 3.3-V Output Level Shift
      With 3.3-V VCC
    • 5-V/3.3-V Input Down to 2.5-V Output Level Shift
      With 2.5-V VCC
  • 5-V Tolerant I/Os With Device Powered Up or
    Powered Down
  • Bidirectional Data Flow With Near-Zero
    Propagation Delay
  • Low ON-State Resistance (ron) Characteristics (ron =
    5 Ω Typical)
  • Low Input/Output Capacitance Minimizes Loading
    (Cio(OFF) = 4.5 pF Typical)
  • Data and Control Inputs Provide Undershoot
    Clamp Diodes
  • Low Power Consumption (ICC = 20 µA Maximum)
  • VCC Operating Range From 2.3 V to 3.6 V
  • Data I/Os Support 0- to 5-V Signaling Levels (0.8
    V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
  • Control Inputs Can Be Driven by TTL or 5-V/3.3-V
    CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 250 mA Per
    JESD 17
  • ESD Performance Tested Per JESD 22
    • 2000-V Human Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Digital Applications:
    • Level Translation
    • USB Interface
    • Bus Isolation
  • Ideal for Low-Power Portable Equipment
  • Output Voltage Translation Tracks VCC
  • Supports Mixed-Mode Signal Operation on All Data
    I/O Ports
    • 5-V Input Down to 3.3-V Output Level Shift
      With 3.3-V VCC
    • 5-V/3.3-V Input Down to 2.5-V Output Level Shift
      With 2.5-V VCC
  • 5-V Tolerant I/Os With Device Powered Up or
    Powered Down
  • Bidirectional Data Flow With Near-Zero
    Propagation Delay
  • Low ON-State Resistance (ron) Characteristics (ron =
    5 Ω Typical)
  • Low Input/Output Capacitance Minimizes Loading
    (Cio(OFF) = 4.5 pF Typical)
  • Data and Control Inputs Provide Undershoot
    Clamp Diodes
  • Low Power Consumption (ICC = 20 µA Maximum)
  • VCC Operating Range From 2.3 V to 3.6 V
  • Data I/Os Support 0- to 5-V Signaling Levels (0.8
    V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
  • Control Inputs Can Be Driven by TTL or 5-V/3.3-V
    CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 250 mA Per
    JESD 17
  • ESD Performance Tested Per JESD 22
    • 2000-V Human Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Digital Applications:
    • Level Translation
    • USB Interface
    • Bus Isolation
  • Ideal for Low-Power Portable Equipment

The SN74CB3T3306 device is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. The device fully supports mixed-mode signal operation on all data I/O ports by providing voltage translation that tracks VCC. The SN74CB3T3306 device supports systems using 5-V TTL, 3.3-V LVTTL, and 2.5-V CMOS switching standards, as well as user-defined switching levels.

The SN74CB3T3306 device is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. The device fully supports mixed-mode signal operation on all data I/O ports by providing voltage translation that tracks VCC. The SN74CB3T3306 device supports systems using 5-V TTL, 3.3-V LVTTL, and 2.5-V CMOS switching standards, as well as user-defined switching levels.

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Documentación técnica

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Tipo Título Fecha
* Data sheet SN74CB3T3306 Dual FET Bus Switch 2.5-V/3.3-V Low-Voltage Bus Switch With 5-V Tolerant Level Shifter datasheet (Rev. C) PDF | HTML 31 dic 2015
Application note Selecting the Correct Texas Instruments Signal Switch (Rev. E) PDF | HTML 02 jun 2022
Application note Multiplexers and Signal Switches Glossary (Rev. B) PDF | HTML 01 dic 2021
Application note CBT-C, CB3T, and CB3Q Signal-Switch Families (Rev. C) PDF | HTML 19 nov 2021
Application brief Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C) PDF | HTML 06 ene 2021
Selection guide Logic Guide (Rev. AB) 12 jun 2017
Application note How to Select Little Logic (Rev. A) 26 jul 2016
Application note Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 02 dic 2015
User guide LOGIC Pocket Data Book (Rev. B) 16 ene 2007
More literature Digital Bus Switch Selection Guide (Rev. A) 10 nov 2004
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 08 jul 2004
Application note Selecting the Right Level Translation Solution (Rev. A) 22 jun 2004
User guide Signal Switch Data Book (Rev. A) 14 nov 2003
Application note Bus FET Switch Solutions for Live Insertion Applications 07 feb 2003

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

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Modelo de simulación

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Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

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