The SN74CBT16245C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron),
allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the
SN74CBT16245C provides protection for undershoot up to 2 V by sensing an undershoot event and ensuring
that the switch remains in the proper OFF state.
The SN74CBT16245C is organized as two 8-bit bus switches with separate output-enable (1OE\, 2OE\) inputs.
It can be used as two 8-bit bus switches or as one 16-bit bus switch. When OE\ is low, the associated 8-bit bus
switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When
OE\ is high, the associated 8-bit bus switch is OFF and the high-impedance state exists between the A and B
ports.
This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that
damaging current will not backflow through the device when it is powered down. The device has isolation during
power off.
To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup
resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
The SN74CBT16245C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron),
allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the
SN74CBT16245C provides protection for undershoot up to 2 V by sensing an undershoot event and ensuring
that the switch remains in the proper OFF state.
The SN74CBT16245C is organized as two 8-bit bus switches with separate output-enable (1OE\, 2OE\) inputs.
It can be used as two 8-bit bus switches or as one 16-bit bus switch. When OE\ is low, the associated 8-bit bus
switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When
OE\ is high, the associated 8-bit bus switch is OFF and the high-impedance state exists between the A and B
ports.
This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that
damaging current will not backflow through the device when it is powered down. The device has isolation during
power off.
To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup
resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.