Detalles del producto

Protocols Analog Audio Configuration 2:1 SPDT Number of channels 2 Bandwidth (MHz) 32 Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 2.75 Ron (typ) (mΩ) 700 Input/output voltage (min) (V) -3.25 Input/output voltage (max) (V) 5.5 Supply current (typ) (µA) 6 ESD HBM (typ) (kV) 2.5 Operating temperature range (°C) -40 to 85 Crosstalk (dB) -70 ESD CDM (kV) 1 Input/output continuous current (max) (mA) 150 COFF (typ) (pF) 48 CON (typ) (pF) 176 Off isolation (typ) (dB) -70 OFF-state leakage current (max) (µA) 0.375 Ron (max) (mΩ) 2000 Ron channel match (max) (Ω) 1 RON flatness (typ) (Ω) 0.0135 Turnoff time (disable) (max) (ns) 206 Turnon time (enable) (max) (ns) 470 VIH (min) (V) 1.05 VIL (max) (V) 0.65
Protocols Analog Audio Configuration 2:1 SPDT Number of channels 2 Bandwidth (MHz) 32 Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 2.75 Ron (typ) (mΩ) 700 Input/output voltage (min) (V) -3.25 Input/output voltage (max) (V) 5.5 Supply current (typ) (µA) 6 ESD HBM (typ) (kV) 2.5 Operating temperature range (°C) -40 to 85 Crosstalk (dB) -70 ESD CDM (kV) 1 Input/output continuous current (max) (mA) 150 COFF (typ) (pF) 48 CON (typ) (pF) 176 Off isolation (typ) (dB) -70 OFF-state leakage current (max) (µA) 0.375 Ron (max) (mΩ) 2000 Ron channel match (max) (Ω) 1 RON flatness (typ) (Ω) 0.0135 Turnoff time (disable) (max) (ns) 206 Turnon time (enable) (max) (ns) 470 VIH (min) (V) 1.05 VIL (max) (V) 0.65
DSBGA (YFC) 12 1.8369 mm² 1.57 x 1.17
  • Negative Signaling Capability: Maximum Swing From –2.75 V to 2.75 V (V+ = 2.75 V)
  • Low ON-State Resistance (0.7 Ω Typ)
  • Excellent ON-State Resistance Matching
  • 1.8-V Compatible Control Input Threshold Independent of V+
  • Control Inputs Are 5.5-V Tolerant
  • 2.25-V to 5.5-V Power Supply (V+)
  • Low Charge Injection
  • Specified Break-Before-Make Switching
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2500-V Human-Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
    • 200-V Machine Model (A115-A)
  • Negative Signaling Capability: Maximum Swing From –2.75 V to 2.75 V (V+ = 2.75 V)
  • Low ON-State Resistance (0.7 Ω Typ)
  • Excellent ON-State Resistance Matching
  • 1.8-V Compatible Control Input Threshold Independent of V+
  • Control Inputs Are 5.5-V Tolerant
  • 2.25-V to 5.5-V Power Supply (V+)
  • Low Charge Injection
  • Specified Break-Before-Make Switching
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2500-V Human-Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
    • 200-V Machine Model (A115-A)

The TS5A22366 is a dual single-pole double-throw (SPDT) analog switch that is designed to operate from 2.25 V to 5.5 V. The device features negative signal capability that allows signals below ground to pass through the switch without distortion.

The break-before-make feature prevents signal distortion during the transferring of a signal from one path to another. Low ON-state resistance, excellent channel-to-channel ON-state resistance matching, and minimal total harmonic distortion (THD) performance are ideal for audio applications.

The TS5A22366 is available is a ultra small 1.6 mm × 1.2 mm wafer-chip-scale package (WCSP) (0.4 mm pitch).

The TS5A22366 is a dual single-pole double-throw (SPDT) analog switch that is designed to operate from 2.25 V to 5.5 V. The device features negative signal capability that allows signals below ground to pass through the switch without distortion.

The break-before-make feature prevents signal distortion during the transferring of a signal from one path to another. Low ON-state resistance, excellent channel-to-channel ON-state resistance matching, and minimal total harmonic distortion (THD) performance are ideal for audio applications.

The TS5A22366 is available is a ultra small 1.6 mm × 1.2 mm wafer-chip-scale package (WCSP) (0.4 mm pitch).

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Documentación técnica

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Tipo Título Fecha
* Data sheet 0.8-Ohm Dual SPDT Analog Switch With Negative Rail Capability and 1.8-V Compatib datasheet (Rev. B) 03 jun 2013
Application brief 1.8-V Logic for Multiplexers and Signal Switches (Rev. C) PDF | HTML 26 jul 2022
Application note Selecting the Correct Texas Instruments Signal Switch (Rev. E) PDF | HTML 02 jun 2022
Application note Multiplexers and Signal Switches Glossary (Rev. B) PDF | HTML 01 dic 2021
Application note Preventing Excess Power Consumption on Analog Switches 03 jul 2008
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 08 jul 2004

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Modelo de simulación

HSPICE Model for TS5A22366

SCDM125.ZIP (106 KB) - HSpice Model
Modelo de simulación

TS5A22366 IBIS Model

SCDM124.ZIP (67 KB) - IBIS Model
Encapsulado Pines Símbolos CAD, huellas y modelos 3D
DSBGA (YFC) 12 Ultra Librarian

Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

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Soporte y capacitación

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