계산 툴
BLDC-MAX-QG-MOSFET-CALCULATOR — Calculate the maximum QG MOSFET for your motor driver
Calculate the maximum QG MOSFET that can be driven based on the PWM switching frequency, algorithm type, and additional external capacitance.
DRV8340-Q1
- AEC-Q100 qualified for automotive applications
- Temperature grade 1: –40°C ≤ TA ≤ 125°C
- Three independent half-bridge gate driver
- Dedicated source (SHx) and drain (DLx) pins to support independent MOSFET control
- Drives 3 high-side and 3 low-side N-channel MOSFETs (NMOS)
- Smart gate drive architecture
- Adjustable slew rate control
- 1.5-mA to 1-A peak source current
- 3-mA to 2-A peak sink current
- Charge-pump of gate driver for 100% Duty Cycle
- SPI (S) and hardware (H) interface available
- 6x, 3x, 1x, and independent PWM modes
- Supports 3.3-V, and 5-V logic inputs
- Charge pump output can be used to drive the reverse supply protection MOSFET
- Linear voltage regulator, 3.3 V, 30 mA
- Integrated protection features
- VM undervoltage lockout (UVLO)
- Charge pump undervoltage (CPUV)
- Short to battery (SHT_BAT)
- Short to ground (SHT_GND)
- MOSFET overcurrent protection (OCP)
- Gate driver fault (GDF)
- Thermal warning and shutdown (OTW/OTSD)
- Fault condition indicator (nFAULT)
The DRV8340-Q1 device is an integrated gate driver for three-phase applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The dedicated Source and Drain pins enable the independent MOSFET control for solenoid application. The DRV8340-Q1 generates the correct gate drive voltages using an integrated charge pump sufficient for the high-side MOSFETs and a linear regulator for the low-side MOSFETs. The Smart Gate Drive architecture supports peak gate drive currents up to 1-A source and 2-A. The DRV8340-Q1 can operate from a single power supply and supports a wide input supply range of 5.5 to 60 V for the gate driver.
The 6x, 3x, 1x, and independent input PWM modes allow for simple interfacing to controller circuits. The configuration settings for the gate driver and device are highly configurable through the SPI or hardware (H/W) interface.
A low-power sleep mode is provided to achieve low quiescent current. Internal protection functions are provided for undervoltage lockout, charge pump fault, MOSFET overcurrent, MOSFET short circuit, phase-node short to supply and ground, gate driver fault, and overtemperature. Fault conditions are indicated on the nFAULT pin with details through the device registers for the SPI device variant.
관심 가지실만한 유사 제품
비교 대상 장치와 유사한 기능
기술 자료
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3개 모두 보기 | 유형 | 직함 | 날짜 | ||
|---|---|---|---|---|
| * | Data sheet | DRV8340-Q1 12-V / 24-V Automotive Gate Driver Unit (GDU) with Independent Half Bridge Control datasheet | PDF | HTML | 2017/03/09 |
| Application note | System Design Considerations for High-Power Motor Driver Applications | PDF | HTML | 2021/06/22 | |
| Application note | Switched Reluctance Motor (SRM) Inverter Design With the DRV8343-Q1 | 2020/01/30 |
설계 및 개발
추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.
평가 보드
DRV8343H-Q1EVM — DRV8343H-Q1 오토모티브 3상 모터 스마트 게이트 드라이버 평가 모듈
The DRV8343H-Q1EVM evaluation module is a 6V to 60V, 20A, a highly configurable 3-phase brushless DC (BLDC) motor drive and control evaluation platform designed for 12-V to 24-V automotive systems based on the DRV8343H-Q1 automotive smart gate driver. The EVM has onboard reverse battery (...)
사용 설명서: PDF
평가 보드
DRV8343S-Q1EVM — DRV8343S-Q1 오토모티브 3상 모터 스마트 게이트 드라이버 평가 모듈
The DRV8343S-Q1EVM evaluation module is a 6V to 60V, 20A, a highly configurable 3-phase brushless DC (BLDC) motor drive and control evaluation platform designed for 12-V to 24-V automotive systems based on the DRV8343S-Q1 automotive smart gate driver. The EVM has onboard reverse battery (...)
사용 설명서: PDF
| 패키지 | 핀 | CAD 기호, 풋프린트 및 3D 모델 |
|---|---|---|
| HTQFP (PHP) | 48 | Ultra Librarian |
주문 및 품질
포함된 정보:
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
- 지속적인 신뢰성 모니터링
포함된 정보:
- 팹 위치
- 조립 위치