SN74CB3Q16811
- Member of the Texas Instruments Widebus™ Family
- SN74CB3Q Bus Switches Are Equivalent to IDTQS3VH Bus Switches
- 5-V-Tolerant I/Os with Device Powered-Up or Powered-Down
- Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range
- Rail-to-Rail Switching on Data I/O Ports
- 0- to 5-V Switching With 3.3-V VCC
- 0- to 3.3-V Switching With 2.5-V VCC
- B-Port Outputs Are Precharged by Bias Voltage (BIASV) to Minimize Signal Distortion During Live Insertion and Hot-Plugging
- Supports PCI Hot Plug
- Bidirectional Data Flow, With Near-Zero Propagation Delay
- Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 4 pF Typ)
- Fast Switching Frequency (fON\ = 20 MHz Max)
- Data and Control Inputs Provide Undershoot Clamp Diodes
- Low Power Consumption (ICC = 0.75 mA Typ)
- VCC Operating Range From 2.3 V to 3.6 V
- Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
- Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
- Ioff Supports Partial-Power-Down Mode Operation
- Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
- ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
- Supports Both Digital and Analog Applications: PCI Hot Plug, Hot Docking, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating
For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, literature number SCDA008.
Widebus is a trademark of Texas Instruments.
The SN74CB3Q16811 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q16811 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.
The SN74CB3Q16811 is organized as two 12-bit bus switches with separate output-enable (1OE\, 2OE\) inputs. It can be used as two 12-bit bus switches or as one 24-bit bus switch. When OE\ is low, the associated 12-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated 12-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. The B port is precharged to BIASV through the equivalent of a 10-k
resistor when OE\ is high, or if the device is powered down (VCC = 0 V).
During insertion (or removal) of a card into (or from) an active bus, the card’s output voltage may be close to GND. When the connector pins make contact, the card’s parasitic capacitance tries to force the bus signal to GND, creating a possible glitch on the active bus. This glitching effect can be reduced by using a bus switch with precharged bias voltage (BIASV) of the bus switch equal to the input threshold voltage level of the receivers on the active bus. This method will ensure that any glitch produced by insertion (or removal) of the card will not cross the input threshold region of the receivers on the active bus, minimizing the effects of live-insertion noise.
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down.
To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
기술 자료
| 유형 | 직함 | 날짜 | ||
|---|---|---|---|---|
| * | Data sheet | SN74CB3Q16811 datasheet (Rev. B) | 2004/08/03 | |
| Application note | Selecting the Correct Texas Instruments Signal Switch (Rev. E) | PDF | HTML | 2022/06/02 | |
| Application note | Multiplexers and Signal Switches Glossary (Rev. B) | PDF | HTML | 2021/12/01 | |
| Application note | CBT-C, CB3T, and CB3Q Signal-Switch Families (Rev. C) | PDF | HTML | 2021/11/19 | |
| Application brief | Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C) | PDF | HTML | 2021/01/06 | |
| Selection guide | Logic Guide (Rev. AB) | 2017/06/12 | ||
| Application note | Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) | 2015/12/02 | ||
| User guide | LOGIC Pocket Data Book (Rev. B) | 2007/01/16 | ||
| More literature | Digital Bus Switch Selection Guide (Rev. A) | 2004/11/10 | ||
| Application note | Semiconductor Packing Material Electrostatic Discharge (ESD) Protection | 2004/07/08 | ||
| User guide | Signal Switch Data Book (Rev. A) | 2003/11/14 | ||
| Application note | Bus FET Switch Solutions for Live Insertion Applications | 2003/02/07 |
설계 및 개발
추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.
| 패키지 | 핀 | CAD 기호, 풋프린트 및 3D 모델 |
|---|---|---|
| TSSOP (DGG) | 56 | Ultra Librarian |
| TVSOP (DGV) | 56 | Ultra Librarian |
주문 및 품질
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
- 지속적인 신뢰성 모니터링
- 팹 위치
- 조립 위치
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