SN74CB3Q3345
- High-Bandwidth Data Path (up to 500 MHz)(1)
- 5-V-Tolerant I/Os With Device Powered Up or Powered Down
- Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range
(ron = 4 Typ) - Rail-to-Rail Switching on Data I/O Ports
- 0- to 5-V Switching With 3.3-V VCC
- 0- to 3.3-V Switching With 2.5-V VCC
- Bidirectional Data Flow With Near-Zero Propagation Delay
- Low Input/Output Capacitance Minimizes Loading and Signal Distortion
(Cio(OFF) = 4 pF Typ) - Fast Switching Frequency (fOE = 20 MHz Max)
- Data and Control Inputs Provide Undershoot Clamp Diodes
- Low Power Consumption (ICC = 0.7 mA Typ)
- VCC Operating Range From 2.3 V to 3.6 V
- Data I/Os Support 0- to 5-V Signaling Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
- Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
- Ioff Supports Partial-Power-Down Mode Operation
- Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
- ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model
(A114-B, Class II) - 1000-V Charged-Device Model (C101)
- 2000-V Human-Body Model
- Supports Both Digital and Analog Applications: Differential Signal Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating
For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, literature number SCDA008.)
The SN74CB3Q3345 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3345 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.
The SN74CB3Q3384A is organized as an 8-bit bus switch with two output-enable (OE, OE) inputs. When OE is high or OE is low, the bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is low and OE is high, the bus switch is OFF, and a high-impedance state exists between the A and B ports.
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.
To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor and OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sinking/current-sourcing capability of the driver.
기술 자료
유형 | 직함 | 날짜 | ||
---|---|---|---|---|
* | Data sheet | SN74CB3Q3345 datasheet (Rev. B) | 2005/03/21 | |
Application note | Selecting the Correct Texas Instruments Signal Switch (Rev. E) | PDF | HTML | 2022/06/02 | |
Application note | Multiplexers and Signal Switches Glossary (Rev. B) | PDF | HTML | 2021/12/01 | |
Application note | CBT-C, CB3T, and CB3Q Signal-Switch Families (Rev. C) | PDF | HTML | 2021/11/19 | |
Application brief | Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C) | PDF | HTML | 2021/01/06 | |
Selection guide | Logic Guide (Rev. AB) | 2017/06/12 | ||
Application note | Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) | 2015/12/02 | ||
User guide | LOGIC Pocket Data Book (Rev. B) | 2007/01/16 | ||
More literature | Digital Bus Switch Selection Guide (Rev. A) | 2004/11/10 | ||
Application note | Semiconductor Packing Material Electrostatic Discharge (ESD) Protection | 2004/07/08 | ||
User guide | Signal Switch Data Book (Rev. A) | 2003/11/14 | ||
Application note | Bus FET Switch Solutions for Live Insertion Applications | 2003/02/07 |
설계 및 개발
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LEADED-ADAPTER1 — TI의 5, 8, 10, 16 및 24핀 리드 패키지의 빠른 테스트를 위한 DIP 헤더 어댑터에 대한 표면 실장
The EVM-LEADED1 board allows for quick testing and bread boarding of TI's common leaded packages. The board has footprints to convert TI's D, DBQ, DCT,DCU, DDF, DGS, DGV, and PW surface mount packages to 100mil DIP headers.
패키지 | 핀 | CAD 기호, 풋프린트 및 3D 모델 |
---|---|---|
SSOP (DBQ) | 20 | Ultra Librarian |
TSSOP (PW) | 20 | Ultra Librarian |
TVSOP (DGV) | 20 | Ultra Librarian |
VQFN (RGY) | 20 | Ultra Librarian |
주문 및 품질
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
- 지속적인 신뢰성 모니터링
- 팹 위치
- 조립 위치
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