SN74CB3T16212

Name: SN74CB3T16212
Brand: TI
SKU: SN74CB3T16212
Price: 0.825 USD

활성

레벨 시프터를 지원하는 3.3V, 크로스포인트/교환, 24채널 FET 버스 스위치

지금 주문

데이터 시트

document-pdfAcrobat SN74CB3T16212 datasheet (Rev. A) (영어)

SN74CB3T16212

활성

데이터 시트

지금 주문

제품 상세 정보

Configuration

Crosspoint/exchange

Number of channels

24

Power supply voltage - single (V)

2.5, 3.3

Protocols

Analog

Ron (typ) (Ω)

5

CON (typ) (pF)

8

ON-state leakage current (max) (µA)

20

Bandwidth (MHz)

100

Operating temperature range (°C)

-40 to 85

Features

Powered-off protection, Signal path translation

Input/output continuous current (max) (mA)

128

Rating

Catalog

Drain supply voltage (max) (V)

3.6

Supply voltage (max) (V)

3.6

Configuration

Crosspoint/exchange

Number of channels

24

Power supply voltage - single (V)

2.5, 3.3

Protocols

Analog

Ron (typ) (Ω)

5

CON (typ) (pF)

8

ON-state leakage current (max) (µA)

20

Bandwidth (MHz)

100

Operating temperature range (°C)

-40 to 85

Features

Powered-off protection, Signal path translation

Input/output continuous current (max) (mA)

128

Rating

Catalog

Drain supply voltage (max) (V)

3.6

Supply voltage (max) (V)

3.6

TSSOP (DGG)

56

113.4 mm² 14 x 8.1

Member of the Texas Instruments Widebus™ Family
Output Voltage Translation Tracks V_CC
Supports Mixed-Mode Signal Operation on All Data I/O Ports
- 5-V Input Down to 3.3-V Output Level Shift With 3.3-V V_CC
- 5-V/3.3-V Input Down to 2.5-V Output Level Shift With 2.5-V V_CC
5-V-Tolerant I/Os With Device Powered Up or Powered Down
Bidirectional Data Flow, With Near-Zero Propagation Delay
Low ON-State Resistance (r_on) Characteristics (r_on = 5 Typ)
Low Input/Output Capacitance Minimizes Loading (C_io(OFF) = 9 pF Typ)
Data and Control Inputs Provide Undershoot Clamp Diodes
Low Power Consumption (I_CC = 70 µA Max)
V_CC Operating Range From 2.3 V to 3.6 V
Data I/Os Support 0- to 5-V Signaling Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
I_off Supports Partial-Power-Down Mode Operation
Latch-Up Performance Exceeds 250 mA Per JESD 17
ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
Supports Digital Applications: Level Translation, PCI Interface, USB Interface, Memory Interleaving, and Bus Isolation
Ideal for Low-Power Portable Equipment

Widebus is a trademark of Texas Instruments.

Member of the Texas Instruments Widebus™ Family
Output Voltage Translation Tracks V_CC
Supports Mixed-Mode Signal Operation on All Data I/O Ports
- 5-V Input Down to 3.3-V Output Level Shift With 3.3-V V_CC
- 5-V/3.3-V Input Down to 2.5-V Output Level Shift With 2.5-V V_CC
5-V-Tolerant I/Os With Device Powered Up or Powered Down
Bidirectional Data Flow, With Near-Zero Propagation Delay
Low ON-State Resistance (r_on) Characteristics (r_on = 5 Typ)
Low Input/Output Capacitance Minimizes Loading (C_io(OFF) = 9 pF Typ)
Data and Control Inputs Provide Undershoot Clamp Diodes
Low Power Consumption (I_CC = 70 µA Max)
V_CC Operating Range From 2.3 V to 3.6 V
Data I/Os Support 0- to 5-V Signaling Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
I_off Supports Partial-Power-Down Mode Operation
Latch-Up Performance Exceeds 250 mA Per JESD 17
ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
Supports Digital Applications: Level Translation, PCI Interface, USB Interface, Memory Interleaving, and Bus Isolation
Ideal for Low-Power Portable Equipment

Widebus is a trademark of Texas Instruments.

The SN74CB3T16212 is a high-speed TTL-compatible FET bus-exchange switch, with low ON-state resistance (r_on), allowing for minimal propagation delay. The device fully supports mixed-mode signal operation on all data I/O ports by providing voltage translation that tracks V_CC. The SN74CB3T16212 supports systems using 5-V TTL, 3.3-V LVTTL, and 2.5-V CMOS switching standards, as well as user-defined switching levels (see Figure 1).

The SN74CB3T16212 operates as a 24-bit bus switch or as a 12-bit bus exchange that provides data exchanging between four signal ports. The select (S0, S1, S2) inputs control the data path of the bus-exchange switch. When the bus-exchange switch is ON, the A port is connected to the B port, allowing bidirectional data flow between ports. When the bus-exchange switch is OFF, a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using I_off. The I_off feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, each select input should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.

The SN74CB3T16212 is a high-speed TTL-compatible FET bus-exchange switch, with low ON-state resistance (r_on), allowing for minimal propagation delay. The device fully supports mixed-mode signal operation on all data I/O ports by providing voltage translation that tracks V_CC. The SN74CB3T16212 supports systems using 5-V TTL, 3.3-V LVTTL, and 2.5-V CMOS switching standards, as well as user-defined switching levels (see Figure 1).

The SN74CB3T16212 operates as a 24-bit bus switch or as a 12-bit bus exchange that provides data exchanging between four signal ports. The select (S0, S1, S2) inputs control the data path of the bus-exchange switch. When the bus-exchange switch is ON, the A port is connected to the B port, allowing bidirectional data flow between ports. When the bus-exchange switch is OFF, a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using I_off. The I_off feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, each select input should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.

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14개 모두 보기

	유형	직함		날짜
*	Data sheet	SN74CB3T16212 datasheet (Rev. A)		2005/01/28
	Application note	Selecting the Correct Texas Instruments Signal Switch (Rev. E)	PDF \| HTML	2022/06/02
	Application note	Multiplexers and Signal Switches Glossary (Rev. B)	PDF \| HTML	2021/12/01
	Application note	CBT-C, CB3T, and CB3Q Signal-Switch Families (Rev. C)	PDF \| HTML	2021/11/19
	Application brief	Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C)	PDF \| HTML	2021/01/06
	Selection guide	Logic Guide (Rev. AB)		2017/06/12
	Application note	How to Select Little Logic (Rev. A)		2016/07/26
	Application note	Understanding and Interpreting Standard-Logic Data Sheets (Rev. C)		2015/12/02
	User guide	LOGIC Pocket Data Book (Rev. B)		2007/01/16
	More literature	Digital Bus Switch Selection Guide (Rev. A)		2004/11/10
	Application note	Semiconductor Packing Material Electrostatic Discharge (ESD) Protection		2004/07/08
	Application note	Selecting the Right Level Translation Solution (Rev. A)		2004/06/22
	User guide	Signal Switch Data Book (Rev. A)		2003/11/14
	Application note	Bus FET Switch Solutions for Live Insertion Applications		2003/02/07

설계 및 개발

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시뮬레이션 모델

SN74CB3T16212 IBIS Model

SCDM141.ZIP (27 KB) - IBIS Model

다운로드

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SN74CB3T16212

레벨 시프터를 지원하는 3.3V, 크로스포인트/교환, 24채널 FET 버스 스위치

SN74CB3T16212

제품 상세 정보

기술 자료

설계 및 개발

SN74CB3T16212 IBIS Model

주문 및 품질

지원 및 교육

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