홈 스위치 및 멀티플렉서 아날로그 스위치 및 멀티플렉서
홈
스위치 및 멀티플렉서
아날로그 스위치 및 멀티플렉서

SN74CBT3253C

활성

-2V 언더슈트 보호 기능을 지원하는 5V, 4:1, 2채널 FET 버스 스위치

지금 주문
데이터 시트

SN74CBT3253C

활성
데이터 시트 지금 주문

제품 상세 정보

Configuration 4:1 Number of channels 2 Power supply voltage - single (V) 5 Protocols Analog Ron (typ) (Ω) 3 CON (typ) (pF) 22 Bandwidth (MHz) 200 Operating temperature range (°C) -40 to 85 Features Undershoot protection Input/output continuous current (max) (mA) 128 Rating Catalog Drain supply voltage (max) (V) 5.5 Supply voltage (max) (V) 5.5
Configuration 4:1 Number of channels 2 Power supply voltage - single (V) 5 Protocols Analog Ron (typ) (Ω) 3 CON (typ) (pF) 22 Bandwidth (MHz) 200 Operating temperature range (°C) -40 to 85 Features Undershoot protection Input/output continuous current (max) (mA) 128 Rating Catalog Drain supply voltage (max) (V) 5.5 Supply voltage (max) (V) 5.5
SOIC (D) 16 59.4 mm² 9.9 x 6 SSOP (DB) 16 48.36 mm² 6.2 x 7.8 SSOP (DBQ) 16 29.4 mm² 4.9 x 6 TSSOP (PW) 16 32 mm² 5 x 6.4 VQFN (RGY) 16 14 mm² 4 x 3.5
  • SN74CBT3253C Functionally Identical to Industry-Standard ’3253 Function
  • Undershoot Protection for Off-Isolation on A and B Ports up to -2 V
  • Bidirectional Data Flow, With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron) Characteristics (ron = 3 Typical)
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5.5 pF Typical)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 3 µA Max)
  • VCC Operating Range From 4 V to 5.5 V
  • Data I/Os Support 0 to 5-V Signaling Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
  • Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports I2C Bus Expansion
  • Supports Both Digital and Analog Applications: USB Interface, Bus Isolation, Low-Distortion Signal Gating
  • SN74CBT3253C Functionally Identical to Industry-Standard ’3253 Function
  • Undershoot Protection for Off-Isolation on A and B Ports up to -2 V
  • Bidirectional Data Flow, With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron) Characteristics (ron = 3 Typical)
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5.5 pF Typical)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 3 µA Max)
  • VCC Operating Range From 4 V to 5.5 V
  • Data I/Os Support 0 to 5-V Signaling Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
  • Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports I2C Bus Expansion
  • Supports Both Digital and Analog Applications: USB Interface, Bus Isolation, Low-Distortion Signal Gating

The SN74CBT3253C is a high-speed TTL-compatible FET multiplexer/demultiplexer with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT3253C provides protection for undershoot up to -2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

The SN74CBT3253C is organized as two 1-of-4 multiplexer/demultiplexers with separate output-enable (1OE, 2OE) inputs. The select (S0, S1) inputs control the data path of each multiplexer/demultiplexer. When OE is low, the associated multiplexer/demultiplexer is enabled, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated multiplexer/demultiplexer is disabled, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CBT3253C is a high-speed TTL-compatible FET multiplexer/demultiplexer with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT3253C provides protection for undershoot up to -2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

The SN74CBT3253C is organized as two 1-of-4 multiplexer/demultiplexers with separate output-enable (1OE, 2OE) inputs. The select (S0, S1) inputs control the data path of each multiplexer/demultiplexer. When OE is low, the associated multiplexer/demultiplexer is enabled, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated multiplexer/demultiplexer is disabled, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
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관심 가지실만한 유사 제품

open-in-new 대안 비교
다른 핀 출력을 지원하지만 비교 대상 장치와 동일한 기능
TMUX1309 활성 1.8V 로직 제어를 지원하는 2채널 4:1 범용 아날로그 멀티플렉서 Upgraded rail-to-rail switching, 1.8-V logic support, smaller package options and -40 to 125°C temperature rating

기술 자료

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13개 모두 보기
유형 직함 날짜
* Data sheet SN74CBT3253C datasheet (Rev. B) 2007/01/25
Application note Selecting the Correct Texas Instruments Signal Switch (Rev. E) PDF | HTML 2022/06/02
Application note Multiplexers and Signal Switches Glossary (Rev. B) PDF | HTML 2021/12/01
Application note CBT-C, CB3T, and CB3Q Signal-Switch Families (Rev. C) PDF | HTML 2021/11/19
Application brief Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C) PDF | HTML 2021/01/06
Selection guide Little Logic Guide 2018 (Rev. G) 2018/07/06
Selection guide Logic Guide (Rev. AB) 2017/06/12
Application note Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 2015/12/02
User guide LOGIC Pocket Data Book (Rev. B) 2007/01/16
More literature Digital Bus Switch Selection Guide (Rev. A) 2004/11/10
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004/07/08
User guide Signal Switch Data Book (Rev. A) 2003/11/14
Application note Bus FET Switch Solutions for Live Insertion Applications 2003/02/07

설계 및 개발

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인터페이스 어댑터

LEADED-ADAPTER1 — TI의 5, 8, 10, 16 및 24핀 리드 패키지의 빠른 테스트를 위한 DIP 헤더 어댑터에 대한 표면 실장

The EVM-LEADED1 board allows for quick testing and bread boarding of TI's common leaded packages.  The board has footprints to convert TI's D, DBQ, DCT,DCU, DDF, DGS, DGV, and PW surface mount packages to 100mil DIP headers.     

사용 설명서: PDF
TI.com에서 구매 불가
인터페이스 어댑터

LEADLESS-ADAPTER1 — TI의 6, 8, 10, 12, 14, 16 및 20핀 리드 없는 패키지의 테스트를 위한 DIP 헤더 어댑터에 대한 표면 실장

The EVM-LEADLESS1 board allows for quick testing and bread boarding of TI's common leadless packages.  The board has footprints to convert TI's DRC, DTP, DQE, RBW, RGY, RSE, RSV, RSW RTE, RTJ, RUK , RUC, RUG, RUM,RUT and YZP surface mount packages to 100mil DIP headers.
사용 설명서: PDF
TI.com에서 구매 불가
시뮬레이션 모델

SN74CBT3253C IBIS Model

SCDM034.ZIP (26 KB) - IBIS Model
다운로드
패키지 핀 CAD 기호, 풋프린트 및 3D 모델
SOIC (D) 16 Ultra Librarian
SSOP (DB) 16 Ultra Librarian
SSOP (DBQ) 16 Ultra Librarian
TSSOP (PW) 16 Ultra Librarian
VQFN (RGY) 16 Ultra Librarian
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주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

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