SN74CBTD3305C
- Undershoot Protection for Off-Isolation on A and B Ports Up To –2 V
- Integrated Diode to VCC Provides 5-V Input Down To 3.3-V Output Level Shift
- Bidirectional Data Flow, With Near-Zero Propagation Delay
- Low ON-State Resistance (ron) Characteristics (ron = 3 Typical)
- Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5 pF Typical)
- Data and Control Inputs Provide Undershoot Clamp Diodes
- VCC Operating Range From 4.5 V to 5.5 V
- Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
- Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
- Ioff Supports Partial-Power-Down Mode Operation
- Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
- ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
- Supports Both Digital and Analog Applications: USB Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating
The SN74CBTD3305C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. This device features an integrated diode in series with VCC to provide level shifting for 5-V input down to 3.3-V output levels. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBTD3305C provides protection for undershoot up to 2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.
The SN74CBTD3305C is organized as two 1-bit bus switches with separate output-enable (1OE, 2OE) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE is high, the associated 1-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is low, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.
This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down.
To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.
관심 가지실만한 유사 제품
비교 대상 장치와 동일한 기능을 지원하는 핀 대 핀
기술 자료
설계 및 개발
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DIP-ADAPTER-EVM — DIP 어댑터 평가 모듈
소형 표면 실장 IC(집적 회로)와 쉽고 빠르며 경제적인 방식으로 인터페이싱하는 방법을 제공하는 DIP 어댑터 평가 모듈(DIP-ADAPTER-EVM)로 연산 증폭기 프로토타이핑 및 테스트 속도를 높이세요. 제품에 포함된 Samtec 터미널 스트립을 사용하여 지원되는 연산 증폭기를 연결하거나 기존 회로에 직접 연결할 수 있습니다.
DIP 어댑터 EVM 키트는 다음을 포함해 가장 널리 사용되는 6개의 업계 표준 패키지를 지원합니다.
- D 및 U(SOIC-8)
- PW(TSSOP-8)
- DGK(MSOP-8, VSSOP-8)
- (...)
LEADED-ADAPTER1 — TI의 5, 8, 10, 16 및 24핀 리드 패키지의 빠른 테스트를 위한 DIP 헤더 어댑터에 대한 표면 실장
The EVM-LEADED1 board allows for quick testing and bread boarding of TI's common leaded packages. The board has footprints to convert TI's D, DBQ, DCT,DCU, DDF, DGS, DGV, and PW surface mount packages to 100mil DIP headers.
패키지 | 핀 | CAD 기호, 풋프린트 및 3D 모델 |
---|---|---|
SOIC (D) | 8 | Ultra Librarian |
TSSOP (PW) | 8 | Ultra Librarian |
주문 및 품질
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
- 지속적인 신뢰성 모니터링
- 팹 위치
- 조립 위치