제품 상세 정보

Configuration 1:1 SPST Number of channels 10 Power supply voltage - single (V) 5 Protocols Analog Ron (typ) (Ω) 3 ON-state leakage current (max) (µA) 5 Bandwidth (MHz) 200 Operating temperature range (°C) -40 to 85 Features Powered-off protection, Precharged signal path, Undershoot protection Input/output continuous current (max) (mA) 128 Rating Catalog Drain supply voltage (max) (V) 5.5 Supply voltage (max) (V) 5.5
Configuration 1:1 SPST Number of channels 10 Power supply voltage - single (V) 5 Protocols Analog Ron (typ) (Ω) 3 ON-state leakage current (max) (µA) 5 Bandwidth (MHz) 200 Operating temperature range (°C) -40 to 85 Features Powered-off protection, Precharged signal path, Undershoot protection Input/output continuous current (max) (mA) 128 Rating Catalog Drain supply voltage (max) (V) 5.5 Supply voltage (max) (V) 5.5
  • 5- Switch Connection Between Two Ports
  • TTL-Compatible Input Levels
  • Power Off Disables Outputs, Permitting Live Insertion
  • Outputs Are Precharged by Bias Voltage to Minimize Signal Distortion During Live Insertion
  • Active-Clamp Undershoot-Protection Circuit on the I/Os Clamps Undershoots Down to \x962 V
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 200-V Machine Model (A115-A)
    • 1000-V Charged-Device Model (C101)
  • 5- Switch Connection Between Two Ports
  • TTL-Compatible Input Levels
  • Power Off Disables Outputs, Permitting Live Insertion
  • Outputs Are Precharged by Bias Voltage to Minimize Signal Distortion During Live Insertion
  • Active-Clamp Undershoot-Protection Circuit on the I/Os Clamps Undershoots Down to \x962 V
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 200-V Machine Model (A115-A)
    • 1000-V Charged-Device Model (C101)

The SN74CBTK6800 device provides ten bits of high-speed TTL-compatible bus switching. The low on-state resistance of the switch allows bidirectional connections to be made while adding near-zero propagation delay. The device also precharges the B port to a user-selectable bias voltage (BIASV) to minimize live-insertion noise.

The A and B ports have an active-clamp undershoot-protection circuit. When there is an undershoot, the active-clamp circuit is enabled and current from VCC is supplied to clamp the output, preventing the pass transistor from turning on.

The SN74CBTK6800 is organized as one 10-bit switch with a single enable (ON\) input. When ON\ is low, the switch is on, and port A is connected to port B. When ON\ is high, the switch between port A and port B is open. When ON\ is high or VCC is 0 V, B port is precharged to BIASV through the equivalent of a 10-k resistor.

The SN74CBTK6800 device provides ten bits of high-speed TTL-compatible bus switching. The low on-state resistance of the switch allows bidirectional connections to be made while adding near-zero propagation delay. The device also precharges the B port to a user-selectable bias voltage (BIASV) to minimize live-insertion noise.

The A and B ports have an active-clamp undershoot-protection circuit. When there is an undershoot, the active-clamp circuit is enabled and current from VCC is supplied to clamp the output, preventing the pass transistor from turning on.

The SN74CBTK6800 is organized as one 10-bit switch with a single enable (ON\) input. When ON\ is low, the switch is on, and port A is connected to port B. When ON\ is high, the switch between port A and port B is open. When ON\ is high or VCC is 0 V, B port is precharged to BIASV through the equivalent of a 10-k resistor.

다운로드

관심 가지실만한 유사 제품

open-in-new 대안 비교
비교 대상 장치와 유사한 기능
SN74CBT6800C 활성 -2V 언더슈트 보호 기능을 지원하는 5V, 1:1(SPST), 10채널 범용 FET 버스 스위치 –2-V undershoot protection

기술 자료

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유형 직함 날짜
* Data sheet 10-Bit FET Bus Switch W/ Precharged Outputs and Active-Clamp Undershoot-Prot.Ckt datasheet (Rev. B) 2000/10/20

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

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