홈 스위치 및 멀티플렉서 프로토콜별 스위치 및 멀티플렉서
홈
스위치 및 멀티플렉서
프로토콜별 스위치 및 멀티플렉서

TS3DDR4000

활성

3.3V, 2:1(SPDT), 12채널 DDR2, DDR3 및 DDR4 스위치

지금 주문
데이터 시트

TS3DDR4000

활성
데이터 시트 지금 주문

제품 상세 정보

Protocols DDR2, DDR3, DDR4, MIPI Configuration 2:1 SPDT Number of channels 12 Supply voltage (max) (V) 3.6 Supply voltage (min) (V) 2.375 Ron (typ) (mΩ) 8300 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 3.3 Supply current (typ) (µA) 40 ESD HBM (typ) (kV) 3 Operating temperature range (°C) -40 to 85 Crosstalk (dB) -68 COFF (typ) (pF) 1 CON (typ) (pF) 0.5 Off isolation (typ) (dB) -34 OFF-state leakage current (max) (µA) 5 Ron (max) (mΩ) 11200 Ron channel match (max) (Ω) 1 RON flatness (typ) (Ω) 0.6 Turnoff time (disable) (max) (ns) 65 Turnon time (enable) (max) (ns) 65 VIH (min) (V) 1.4 VIL (max) (V) 0.5
Protocols DDR2, DDR3, DDR4, MIPI Configuration 2:1 SPDT Number of channels 12 Supply voltage (max) (V) 3.6 Supply voltage (min) (V) 2.375 Ron (typ) (mΩ) 8300 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 3.3 Supply current (typ) (µA) 40 ESD HBM (typ) (kV) 3 Operating temperature range (°C) -40 to 85 Crosstalk (dB) -68 COFF (typ) (pF) 1 CON (typ) (pF) 0.5 Off isolation (typ) (dB) -34 OFF-state leakage current (max) (µA) 5 Ron (max) (mΩ) 11200 Ron channel match (max) (Ω) 1 RON flatness (typ) (Ω) 0.6 Turnoff time (disable) (max) (ns) 65 Turnon time (enable) (max) (ns) 65 VIH (min) (V) 1.4 VIL (max) (V) 0.5
NFBGA (ZBA) 48 24 mm² 8 x 3
  • Wide VDD Range: 2.375 V – 3.6 V
  • High Bandwidth: 5.6 GHz Typical (single-ended); 6.0 GHz Typical (differential)
  • Low Switch On-Resistance (RON): 8 Ω Typical
  • Low Bit-to-Bit Skew: 3ps Typical; 6ps Max across All Channels
  • Low Crosstalk: –34 dB Typical at 1067 MHz
  • Low Operating Current: 40 µA Typical
  • Low-Power Mode with Low Current Consumption: 2 µA Typical
  • IOFF Protection Prevents Current Leakage in Powered Down State (VDD = 0 V)
  • Supports POD_12, SSTL_12, SSTL_15 and SSTL_18 Signaling
  • ESD Performance:
    • 3-kV Human Body Model (A114B, Class II)
    • 1-kV Charged Device Model (C101)
  • 8 mm x 3 mm 48-balls 0.65-mm Pitch ZBA Package
  • Wide VDD Range: 2.375 V – 3.6 V
  • High Bandwidth: 5.6 GHz Typical (single-ended); 6.0 GHz Typical (differential)
  • Low Switch On-Resistance (RON): 8 Ω Typical
  • Low Bit-to-Bit Skew: 3ps Typical; 6ps Max across All Channels
  • Low Crosstalk: –34 dB Typical at 1067 MHz
  • Low Operating Current: 40 µA Typical
  • Low-Power Mode with Low Current Consumption: 2 µA Typical
  • IOFF Protection Prevents Current Leakage in Powered Down State (VDD = 0 V)
  • Supports POD_12, SSTL_12, SSTL_15 and SSTL_18 Signaling
  • ESD Performance:
    • 3-kV Human Body Model (A114B, Class II)
    • 1-kV Charged Device Model (C101)
  • 8 mm x 3 mm 48-balls 0.65-mm Pitch ZBA Package

The TS3DDR4000 is 1:2 or 2:1 high speed DDR2/DDR3/DDR4 switch that offers 12-bit wide bus switching. The A port can be switched to the B or C port for all bits simultaneously. Designed for operation in DDR2, DDR3 and DDR4 memory bus systems, the TS3DDR4000 uses a proprietary architecture that delivers high bandwidth (single-ended –3dB bandwidth at 5.6 GHz), low insertion loss at low frequency, and very low propagation delay. The TS3DDR4000 is 1.8 V logic compatible, and all switches are bi-directional for added design flexibility. The TS3DDR4000 also offers a low-power mode, in which all channels become high-Z and the device consumes minimal power.

The TS3DDR4000 is 1:2 or 2:1 high speed DDR2/DDR3/DDR4 switch that offers 12-bit wide bus switching. The A port can be switched to the B or C port for all bits simultaneously. Designed for operation in DDR2, DDR3 and DDR4 memory bus systems, the TS3DDR4000 uses a proprietary architecture that delivers high bandwidth (single-ended –3dB bandwidth at 5.6 GHz), low insertion loss at low frequency, and very low propagation delay. The TS3DDR4000 is 1.8 V logic compatible, and all switches are bi-directional for added design flexibility. The TS3DDR4000 also offers a low-power mode, in which all channels become high-Z and the device consumes minimal power.
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기술 자료

star =TI에서 선정한 이 제품의 인기 문서
검색된 결과가 없습니다. 검색어를 지우고 다시 시도하십시오.
6개 모두 보기
유형 직함 날짜
* Data sheet TS3DDR4000 12-bits 1:2 high speed DDR2/DDR3/DDR4 switch/multiplexer datasheet (Rev. C) PDF | HTML 2019/03/18
Product overview Mipi Switches PDF | HTML 2022/01/14
Technical article Memory switches bring reliability and speed to clouding computing PDF | HTML 2016/01/05
EVM User's guide TS3DDR4000 EVM User Guide 2015/02/20
Application note Preventing Excess Power Consumption on Analog Switches 2008/07/03
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004/07/08

설계 및 개발

추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.

평가 보드

TS3DDR4000-EVM — TS3DDR4000 평가 모듈

The TS3DDR4000-EVM is an evaluation module for TI’s 12-bit high-speed DDR2, DDR3 and DDR4 switch/multiplexer.  The module lets you easily evaluate functional switching and logic implementation.

사용 설명서: PDF
TI.com에서 구매 불가
시뮬레이션 모델

TS3DDR4000 HSpice Model

SCDM168.ZIP (5037 KB) - HSpice Model
다운로드
패키지 핀 CAD 기호, 풋프린트 및 3D 모델
NFBGA (ZBA) 48 Ultra Librarian
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주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

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