제품 상세 정보

Configuration 2:1 SPDT Number of channels 2 Power supply voltage - single (V) 2.5, 3.3 Protocols MIPI Ron (typ) (Ω) 3.5 CON (typ) (pF) 10.5 ON-state leakage current (max) (µA) 0.03 Supply current (typ) (µA) 0.1 Bandwidth (MHz) 800 Operating temperature range (°C) -40 to 85 Features Break-before-make Input/output continuous current (max) (mA) 64 Rating Catalog Drain supply voltage (max) (V) 3.6 Supply voltage (max) (V) 3.6
Configuration 2:1 SPDT Number of channels 2 Power supply voltage - single (V) 2.5, 3.3 Protocols MIPI Ron (typ) (Ω) 3.5 CON (typ) (pF) 10.5 ON-state leakage current (max) (µA) 0.03 Supply current (typ) (µA) 0.1 Bandwidth (MHz) 800 Operating temperature range (°C) -40 to 85 Features Break-before-make Input/output continuous current (max) (mA) 64 Rating Catalog Drain supply voltage (max) (V) 3.6 Supply voltage (max) (V) 3.6
DSBGA (YZT) 12 3.9375 mm² 2.25 x 1.75
  • High-Bandwidth Data Paths – Up to 800 MHz
  • Specified Break-Before-Make Switching
  • Control Inputs Reference to VIO
  • Low Charge Injection
  • Excellent ON-State Resistance Matching
  • Low Total Harmonic Distortion (THD)
  • 2.3-V to 3.6-V Power Supply (V+)
  • 1.65-V to 1.95-V Logic Supply (VIO)
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 4000-V Human-Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
    • 200-V Machine Model (A115-A)
  • High-Bandwidth Data Paths – Up to 800 MHz
  • Specified Break-Before-Make Switching
  • Control Inputs Reference to VIO
  • Low Charge Injection
  • Excellent ON-State Resistance Matching
  • Low Total Harmonic Distortion (THD)
  • 2.3-V to 3.6-V Power Supply (V+)
  • 1.65-V to 1.95-V Logic Supply (VIO)
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 4000-V Human-Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
    • 200-V Machine Model (A115-A)

The TS3DS26227 is a dual single-pole double-throw (SPDT) analog switch that is designed to operate from
2.3 V to 3.6 V. The device offers high-bandwidth data paths, and a break-before-make feature to prevent signal distortion during the transferring of a signal from one path to another. The device has excellent total harmonic distortion (THD) performance and consumes very low power. These features make this device suitable for portable applications.

The TS3DS26227 has a separate logic supply pin (VIO) that operates from 1.65 V to 1.95 V. VIO powers the control circuitry, which allows the TS3DS26227 to be controlled by 1.8-V signals.

The TS3DS26227 is a dual single-pole double-throw (SPDT) analog switch that is designed to operate from
2.3 V to 3.6 V. The device offers high-bandwidth data paths, and a break-before-make feature to prevent signal distortion during the transferring of a signal from one path to another. The device has excellent total harmonic distortion (THD) performance and consumes very low power. These features make this device suitable for portable applications.

The TS3DS26227 has a separate logic supply pin (VIO) that operates from 1.65 V to 1.95 V. VIO powers the control circuitry, which allows the TS3DS26227 to be controlled by 1.8-V signals.

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기술 자료

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3개 모두 보기
유형 직함 날짜
* Data sheet High-Bandwidth Dual SPDT Differential Signal Switch With Input Logic Translation datasheet (Rev. B) 2010/11/20
Application note Preventing Excess Power Consumption on Analog Switches 2008/07/03
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004/07/08

설계 및 개발

추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.

시뮬레이션 모델

TS3DS26227 IBIS Model

SCEM513.ZIP (52 KB) - IBIS Model
패키지 CAD 기호, 풋프린트 및 3D 모델
DSBGA (YZT) 12 Ultra Librarian

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

지원 및 교육

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