產品詳細資料

Number of full bridges 1/2 Vs (min) (V) 4.5 Vs ABS (max) (V) 40 Sleep current (µA) 2.5 Control mode PWM Control interface Hardware (GPIO), SPI Features Inline Current sense Amplifier, Smart Gate Drive Rating Automotive Operating temperature range (°C) -40 to 125
Number of full bridges 1/2 Vs (min) (V) 4.5 Vs ABS (max) (V) 40 Sleep current (µA) 2.5 Control mode PWM Control interface Hardware (GPIO), SPI Features Inline Current sense Amplifier, Smart Gate Drive Rating Automotive Operating temperature range (°C) -40 to 125
VQFN (RHB) 32 25 mm² 5 x 5
  • AEC-Q100 qualified for automotive applications:
    • Temperature grade 1: –40°C to +125°C, TA
  • Half-bridge smart gate driver
    • 4.9-V to 37-V (40-V abs. max) operating range
    • Doubler charge pump for 100% PWM
  • Pin to pin gate driver variants
  • Smart gate drive architecture
    • Adjustable slew rate control
    • 0.5-mA to 62-mA peak source current output
    • 0.5-mA to 62-mA peak sink current output
    • Integrated dead-time handshaking
  • Wide common mode current shunt amplifier
    • Supports inline, high-side, or low-side
    • Adjustable gain settings (10, 20, 40, 80 V/V)
    • Integrated feedback resistors
    • Adjustable PWM blanking scheme
  • Multiple interface options available
    • SPI: Detailed configuration and diagnostics
    • H/W: Simplified control and less MCU pins
  • Spread spectrum clocking for EMI reduction
  • Compact VQFN package with wettable flanks
  • Integrated protection features
    • Dedicated driver disable pin (DRVOFF)
    • Supply and regulator voltage monitors
    • MOSFET VDS overcurrent monitors
    • MOSFET VGS gate fault monitors
    • Charge pump for reverse polarity MOSFET
    • Offline open load and short circuit diagnostics
    • Device thermal warning and shutdown
    • Fault condition interrupt pin (nFAULT)
  • AEC-Q100 qualified for automotive applications:
    • Temperature grade 1: –40°C to +125°C, TA
  • Half-bridge smart gate driver
    • 4.9-V to 37-V (40-V abs. max) operating range
    • Doubler charge pump for 100% PWM
  • Pin to pin gate driver variants
  • Smart gate drive architecture
    • Adjustable slew rate control
    • 0.5-mA to 62-mA peak source current output
    • 0.5-mA to 62-mA peak sink current output
    • Integrated dead-time handshaking
  • Wide common mode current shunt amplifier
    • Supports inline, high-side, or low-side
    • Adjustable gain settings (10, 20, 40, 80 V/V)
    • Integrated feedback resistors
    • Adjustable PWM blanking scheme
  • Multiple interface options available
    • SPI: Detailed configuration and diagnostics
    • H/W: Simplified control and less MCU pins
  • Spread spectrum clocking for EMI reduction
  • Compact VQFN package with wettable flanks
  • Integrated protection features
    • Dedicated driver disable pin (DRVOFF)
    • Supply and regulator voltage monitors
    • MOSFET VDS overcurrent monitors
    • MOSFET VGS gate fault monitors
    • Charge pump for reverse polarity MOSFET
    • Offline open load and short circuit diagnostics
    • Device thermal warning and shutdown
    • Fault condition interrupt pin (nFAULT)

The DRV8106-Q1 is a highly integrated half-bridge gate driver, capable of driving high-side and low-side N-channel power MOSFETs. It generates the proper gate drive voltages using an integrated doubler charge pump for the high-side and a linear regulator for the low-side.

The device uses a smart gate drive architecture to reduce system cost and improve reliability. The gate driver optimizes dead time to avoid shoot-through conditions, provides control to decreasing electromagnetic interference (EMI) through adjustable gate drive current, and protects against drain to source and gate short conditions with VDS and VGS monitors.

A wide common mode shunt amplifier provides inline current sensing to continuously measure motor current even during recirculating windows. The amplifier can be used in low-side or high-side sense configurations if inline sensing is not required.

The DRV8106-Q1 provide an array of protection features to ensure robust system operation. These include under and overvoltage monitors for the power supply and charge pump, VDS overcurrent and VGS gate fault monitors for the external MOSFETs, offline open load and short circuit diagnostics, and internal thermal warning and shutdown protection.

The DRV8106-Q1 is a highly integrated half-bridge gate driver, capable of driving high-side and low-side N-channel power MOSFETs. It generates the proper gate drive voltages using an integrated doubler charge pump for the high-side and a linear regulator for the low-side.

The device uses a smart gate drive architecture to reduce system cost and improve reliability. The gate driver optimizes dead time to avoid shoot-through conditions, provides control to decreasing electromagnetic interference (EMI) through adjustable gate drive current, and protects against drain to source and gate short conditions with VDS and VGS monitors.

A wide common mode shunt amplifier provides inline current sensing to continuously measure motor current even during recirculating windows. The amplifier can be used in low-side or high-side sense configurations if inline sensing is not required.

The DRV8106-Q1 provide an array of protection features to ensure robust system operation. These include under and overvoltage monitors for the power supply and charge pump, VDS overcurrent and VGS gate fault monitors for the external MOSFETs, offline open load and short circuit diagnostics, and internal thermal warning and shutdown protection.

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類型 標題 日期
* Data sheet DRV8106-Q1 Automotive Half-Bridge Smart Gate Driver With Wide Common Mode Inline Current Sense Amplifier datasheet (Rev. B) PDF | HTML 2021年 4月 5日
Application note Daisy Chain Implementation for Serial Peripheral Interface (Rev. A) 2021年 4月 7日
Application note Understanding Smart Gate Drive (Rev. D) 2021年 3月 1日
Technical article How analog integration simplifies automotive body motor controller designs PDF | HTML 2020年 10月 23日
Application brief Benefits of a Wide Common Mode, Differential Current Shunt Amplifier PDF | HTML 2020年 9月 8日
Application note Detecting Short to Battery and Ground Conditions with TI Motor Gate Drivers PDF | HTML 2020年 5月 29日
White paper Smart Gate Drive 2019年 7月 2日
Application note Protecting Automotive Motor Drive Systems from Reverse Polarity Conditions (Rev. A) 2019年 2月 19日
Application note Cut-Off Switch in High-Current Motor-Drive Applications (Rev. A) 2018年 8月 20日
Application note Relay Replacement for Brushed DC Motor Drive in Automotive Applications 2016年 11月 14日

設計與開發

如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

DRV8106H-Q1EVM — 具有寬共模電流感測放大器的車用半橋智慧型閘極驅動器評估模組

DRV8106H-Q1EVM 設計旨在評估 DRV8106H-Q1,是一款符合車用資格的整合式有刷 DC 馬達驅動器。DRV8106H-Q1 是一款高度整合的全橋閘極驅動器,可驅動高壓側和低壓側 N 通道電源 MOSFET。其在高壓側使用整合式倍頻充電泵,並在低壓側採用線性穩壓器,以產生適當閘極驅動電壓。

此裝置採用智慧閘極驅動器架構,可降低系統成本並提升可靠性。閘極驅動器將失效時間最佳化以避免擊穿情況,其透過可調式閘極驅動電流提供控制以減少電磁干擾 (EMI),並利用 VDS 和 VGS 監控器防止汲極至來源和閘極短路狀況。廣泛共模分流放大器提供內嵌電流感測以持續測量馬達電流。

(...)

使用指南: PDF
開發板

DRV8106S-Q1EVM — 具有廣泛共模電流感測放大器的車用半橋智慧型閘極驅動器 EVM

DRV8106S-Q1EVM 設計旨在評估 DRV8106S-Q1,是一款符合車用資格的整合式有刷 DC 馬達驅動器。DRV8106S-Q1 是一款高度整合的全橋閘極驅動器,可驅動高壓側和低壓側 N 通道電源 MOSFET。其在高壓側使用整合式倍頻充電泵,並在低壓側採用線性穩壓器,以產生適當閘極驅動電壓。

此裝置採用智慧閘極驅動器架構,可降低系統成本並提升可靠性。閘極驅動器將失效時間最佳化以避免擊穿情況,其透過可調式閘極驅動電流提供控制以減少電磁干擾 (EMI),並利用 VDS 和 VGS 監控器防止汲極至來源和閘極短路狀況。

廣泛共模分流放大器提供內嵌電流感測以持續測量馬達電流。

(...)

使用指南: PDF
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VQFN (RHB) 32 Ultra Librarian

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