DRV8705-Q1
- AEC-Q100 qualified for automotive applications:
- Temperature grade 1: –40°C to +125°C, TA
- Functional Safety-Capable
- Documentation available to aid functional safety system design
- H-bridge smart gate driver
- 4.9V to 37V (40V abs. max) operating range
- Doubler charge pump for 100% PWM
- Half-bridge and H-bridge control modes
- Pin to pin gate driver variants
- DRV8106-Q1: Half-bridge with inline amplifier
- DRV8706-Q1: H-bridge with inline amplifier
- Smart gate drive architecture
- Adjustable slew rate control
- 0.5mA to 62mA peak source current output
- 0.5mA to 62mA peak sink current output
- Integrated dead-time handshaking
- Low-side current shunt amplifier
- Adjustable gain settings (10, 20, 40, 80V/V)
- Integrated feedback resistors
- Adjustable PWM blanking scheme
- Multiple interface options available
- SPI: Detailed configuration and diagnostics
- H/W: Simplified control and less MCU pins
- Spread spectrum clocking for EMI reduction
- Compact VQFN package with wettable flanks
- Integrated protection features
- Dedicated driver disable pin (DRVOFF)
- Supply and regulator voltage monitors
- MOSFET VDS overcurrent monitors
- MOSFET VGS gate fault monitors
- Charge pump for reverse polarity MOSFET
- Offline open load and short circuit diagnostics
- Device thermal warning and shutdown
- Fault condition interrupt pin (nFAULT)
The DRV8705-Q1 is a highly integrated H-bridge gate driver, capable of driving high-side and low-side N-channel power MOSFETs. It generates the proper gate drive voltages using an integrated doubler charge pump for the high-side and a linear regulator for the low-side.
The device uses a smart gate drive architecture to reduce system cost and improve reliability. The gate driver optimizes dead time to avoid shoot-through conditions, provides control to decreasing electromagnetic interference (EMI) through adjustable gate drive current, and protects against drain to source and gate short conditions with VDS and VGS monitors.
A low-side shunt amplifier allows for current sensing in order to measure motor current and provide feedback to the external controller for current limiting or stall detection.
The DRV8705-Q1 provide an array of protection features to ensure robust system operation. These include under and overvoltage monitors for the power supply and charge pump, VDS overcurrent and VGS gate fault monitors for the external MOSFETs, offline open load and short circuit diagnostics, and internal thermal warning and shutdown protection.
技術文件
設計與開發
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DRV8705H-Q1EVM — 具有低壓側電流感測放大器的車用全橋智慧型閘極驅動器 EVM
DRV8705H-Q1EVM 設計旨在評估 DRV8705H-Q1，是一款符合車用資格的整合式有刷 DC 馬達驅動器。DRV8705H-Q1 是一款高度整合的全橋閘極驅動器，可驅動高壓側和低壓側 N 通道電源 MOSFET。其在高壓側使用整合式倍頻充電泵，並在低壓側採用線性穩壓器，以產生適當閘極驅動電壓。
此裝置採用智慧閘極驅動器架構，可降低系統成本並提升可靠性。閘極驅動器將失效時間最佳化以避免擊穿情況，其透過可調式閘極驅動電流提供控制以減少電磁干擾 (EMI)，並利用 VDS 和 VGS 監控器防止汲極至來源和閘極短路狀況。分流放大器可提供低壓側電流感測以持續測量馬達電流。
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DRV8705S-Q1EVM — 具有低壓側電流感測放大器的車用全橋智慧型閘極驅動器 EVM
DRV8705S-Q1EVM 設計旨在評估 DRV8705H-Q1，是一款符合車用資格的整合式有刷 DC 馬達驅動器。DRV8705S-Q1 是一款高度整合的全橋閘極驅動器，可驅動高壓側和低壓側 N 通道電源 MOSFET。其在高壓側使用整合式倍頻充電泵，並在低壓側採用線性穩壓器，以產生適當閘極驅動電壓。
此裝置採用智慧閘極驅動器架構，可降低系統成本並提升可靠性。閘極驅動器將失效時間最佳化以避免擊穿情況，其透過可調式閘極驅動電流提供控制以減少電磁干擾 (EMI)，並利用 VDS 和 VGS 監控器防止汲極至來源和閘極短路狀況。
分流放大器可提供低壓側電流感測以持續測量馬達電流。
(...)
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| VQFN (RHB) | 32 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。