SN74CB3Q16244
- High-Bandwidth Data Path (Up to 500 MHz)(1)
- 5-V Tolerant I/Os With Device Powered Up or
Powered Down - Low and Flat ON-State Resistance (ron)
Characteristics Over Operating Range
(ron= 5 Ω Typical) - Rail-to-Rail Switching on Data I/O Ports
- 0 to 5-V Switching With 3.3-V VCC
- 0 to 3.3-V Switching With 2.5-V VCC
- Bidirectional Data Flow With Near-Zero
Propagation Delay - Low Input and Output Capacitance Minimizes
Loading and Signal Distortion
(Cio(OFF) = 4 pF Typical) - Fast Switching Frequency (fOE = 20 MHz
Maximum) - Data and Control Inputs Provide Undershoot
Clamp Diodes - Low Power Consumption (ICC = 1 mA Typical)
- VCC Operating Range From 2.3 V to 3.6 V
- Data I/Os Support 0 to 5-V Signaling Levels
(0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V) - Control Inputs Can Be Driven by TTL or
5-V and 3.3-V CMOS Outputs - Ioff Supports Partial-Power-Down Mode Operation
- Latch-Up Performance Exceeds 100 mA
Per JESD 78, Class II - ESD Performance Tested Per JESD 22
- 2000-V Human Body Model
(A114-B, Class II) - 1000-V Charged-Device Model (C101)
- 2000-V Human Body Model
- Supports Both Digital and Analog Applications
The SN74CB3Q16244 device is a high-bandwidth FET bus switch using a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The SN74CB3Q16244 device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q16244 device provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.
The SN74CB3Q16244 device is organized as four 4-bit bus switches with separate output-enable (1OE, 2OE, 3OE, 4OE) inputs. It can be used as four 4-bit bus switches, two 8-bit bus switches, or one 16-bit bus switch. When OE is low, the associated 4-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated 4-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.
To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
技術文件
設計與開發
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封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
---|---|---|
SSOP (DL) | 48 | Ultra Librarian |
TSSOP (DGG) | 48 | Ultra Librarian |
TVSOP (DGV) | 48 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。